Paper Citation Record · LEDGER

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies

As of 13 August 2026, this Paper Citation Record lists 19 of 19 outbound references and 0 inbound Pith citation observations for arXiv:2411.15521.

A citation records a reference. It does not transfer a finding from one paper to another.

pith.paper-citation-record.v1
2411.15521 v1

Coverage vector

measured 19 of 19 reference resolution

Typed states for the displayed outbound observations.

Source: paper_references, paper_reference_links, observed 2026-08-12T14:17:36.770316Z

measured 19 of 19 standing notices

One-hop event checks from named stored sources.

Source: scholarly_work_events, retraction_status_cache, observed 2026-08-12T06:34:41.77262+00:00

measured 0 of 0 inbound itemization

Pith citing papers itemized under the disclosed page cap.

Source: paper_references, paper_reference_links

measured 0 of 1 external citation measurements

A source-named dated measurement, never combined with another source.

Source: cited_works

Reference resolution

19 of 19 outbound references displayed

verified exact0
verified fuzzy17
unresolved2
parse uncertain0
malformed identifier0
metadata mismatch0

External citation measurements

No source-named external measurement is stored.

Outbound references

Observation 54023bd9-6f00-453a-a97d-fceef85d5a0f · outbound

This paper cites <http://www.itrs.net/> [October 2015].

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies <http://www.itrs.net/> [October 2015]

Reference 1

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T14:17:37.114324Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 5b11b36b-61e6-415a-baee-34d11ef60e36 · outbound

This paper cites Pavlov, M.

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies Pavlov, M

Reference 2

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T14:17:37.097182Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation b36fa700-6bf9-47a5-a64e-f9c5a2634d36 · outbound

This paper cites an unresolved cited work.

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies Unresolved cited work

Reference 3

Resolution: unresolved; raw_fallback, observed 2026-08-12T14:17:37.080306Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 1a7cb2a7-5fc0-480d-8be9-3387cc02ef69 · outbound

This paper cites Aghababa, B.

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies Aghababa, B

Reference 4

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T14:17:37.064720Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 5576bd15-51f7-4b34-996d-11d5405cd769 · outbound

This paper cites Hirabayashi, A.

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies Hirabayashi, A

Reference 5

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T14:17:37.048939Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 5043f04d-c74c-4f25-8da6-31d1d71fb1be · outbound

This paper cites Makino, N.

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies Makino, N

Reference 6

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T14:17:37.032068Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 79fcaa80-5340-4834-8b5d-d80fdff22677 · outbound

This paper cites Carmona, G.

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies Carmona, G

Reference 7

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T14:17:37.015204Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 392f51fa-1ced-4978-a8be-d20533dd2537 · outbound

This paper cites an unresolved cited work.

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies Unresolved cited work

Reference 8

Resolution: unresolved; raw_fallback, observed 2026-08-12T14:17:36.998087Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 500525c7-de60-470d-8300-0832fb1e9c69 · outbound

This paper cites Word-line power supply selector for stability improvement of embedded SRAMs in High Realiability Applications.

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies Word-line power supply selector for stability improvement of embedded SRAMs in High Realiability Applications

Reference 9

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T14:17:36.980871Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation d8a66db5-bbc5-41ab-a4ae-4285f20bedfd · outbound

This paper cites Alorda, G.

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies Alorda, G

Reference 10

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T14:17:36.964688Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 04a9dfdb-117d-4e74-818a-38b80af2de83 · outbound

This paper cites Analytical modeling of SRAM dynamic stability.

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies Analytical modeling of SRAM dynamic stability

Reference 11

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T14:17:36.948323Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation ec9efc80-f99d-4fcf-a9b0-863180af8560 · outbound

This paper cites Zhang,, P.

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies Zhang,, P

Reference 12

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T14:17:36.930717Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 4dbc84f8-9abc-49b0-83df-fc3fa3e1d135 · outbound

This paper cites Khalil, M.

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies Khalil, M

Reference 13

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T14:17:36.913944Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 0af377d9-d6a2-4baa-9c2e-368b26349fbb · outbound

This paper cites Design and Implementation of Dynamic Word - Line Pulse Write Margin Monitor for SRAM.

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies Design and Implementation of Dynamic Word - Line Pulse Write Margin Monitor for SRAM

Reference 14

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T14:17:36.896585Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 0d0a72d1-587e-4942-afeb-38c766a5e235 · outbound

This paper cites Bhavnagarwala, S.

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies Bhavnagarwala, S

Reference 15

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T14:17:36.878341Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 5b86d3f1-5500-4f3c-8a51-d9d58d20f134 · outbound

This paper cites Grossar , M.

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies Grossar , M

Reference 16

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T14:17:36.861503Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 8a4c4f06-f63d-44fb-83a0-50bbd307b011 · outbound

This paper cites Fisher, E.

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies Fisher, E

Reference 17

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T14:17:36.844558Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation e6fa674c-9608-4ae4-898d-de965646ba43 · outbound

This paper cites A new combined methodology for write -margin extraction of advanced SRAM.

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies A new combined methodology for write -margin extraction of advanced SRAM

Reference 18

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T14:17:36.827509Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Observation 7e4432da-63a3-4170-8cab-fd0eb9e83b2f · outbound

This paper cites Torrens, S.

An Affordable Experimental Technique for SRAM Write Margin Characterization for Nanometer CMOS Technologies Torrens, S

Reference 19

Resolution: verified fuzzy; raw_fallback, observed 2026-08-12T14:17:36.809021Z

Source-reported events for the cited work

No event found in the named queried sources as of 2026-08-12T06:34:41.77262+00:00.

Pith citing papers

No inbound Pith citation observations are available.