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28nm Fully-Depleted SOI Technology: Cryogenic Control Electronics for Quantum Computing

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arxiv 2002.07070 v1 pith:WMXQY5V7 submitted 2019-12-20 physics.app-ph cond-mat.mes-hallquant-ph

H. Bohuslavskyi , S. Barraud , M. Cassé , V. Barral , B. Bertrand , L. Hutin , F. Arnaud , P. Galy
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M. Sanquer S. De Franceschi M. Vinet
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classification physics.app-phcond-mat.mes-hallquant-ph
keywords cryogenicbody-biasingcontrolelectronicsoperationquantumtechnologyanalog
verification ladder T0 review T1 audit T2 compute T3 formal
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abstract

This paper reports the first cryogenic characterization of 28nm Fully-Depleted-SOI CMOS technology. A comprehensive study of digital/analog performances and body-biasing from room to the liquid helium temperature is presented. Despite a cryogenic operation, effectiveness of body-biasing remains unchanged and provides an excellent $V_{TH}$ controllability. Low-temperature operation enables higher drive current and a largely reduced subthreshold swing (down to 7mV/dec). FDSOI can provide a valuable approach to cryogenic low-power electronics. Applications such as classical control hardware for quantum processors are envisioned.

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