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arxiv: 2602.20002 · v2 · pith:WWXQHLVTnew · submitted 2026-02-23 · 🪐 quant-ph

Electrical post-fabrication tuning of aluminum Josephson junctions at room temperature

classification 🪐 quant-ph
keywords resistanceincreaseelectricaljosephsonjunctionsmanipulationtuningaluminum
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Josephson junctions are key elements of superconducting quantum technology, serving as the core building blocks of superconducting qubits. We present an experimental study on room-temperature electrical tuning of aluminum junctions, showing that voltage pulses can controllably increase their resistance and adjust the Josephson energy while maintaining qubit quality factors above 1 million. We find that the rate of resistance increase scales exponentially with pulse amplitude during manipulation. Following the manipulation, the resistance increases spontaneously through contributions proportional to both the initial resistance and the preceding manipulation. We show that this spontaneous increase halts at cryogenic temperatures, and resumes again at room temperature. Using our stepwise protocol, we achieve up to a 270% increase in junction resistance, corresponding to a reduction of nearly 2 GHz of the qubit transition frequency. These results establish the achievable range, relaxation behavior, and practical limits of electrical tuning, enabling post-fabrication mitigation of frequency crowding in quantum processors.

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Cited by 2 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score.

  1. Resist-free shadow deposition using silicon trenches for Josephson junctions in superconducting qubits

    quant-ph 2026-04 unverdicted novelty 7.0

    A resist-free silicon-trench shadow deposition method fabricates Al-AlOx-Al Josephson junctions and qubits with median relaxation times up to 184 microseconds and minimal substrate-metal contamination.

  2. Resist-free shadow deposition using silicon trenches for Josephson junctions in superconducting qubits

    quant-ph 2026-04 conditional novelty 7.0

    Resist-free shadow deposition via etched silicon trenches produces Al-AlOx-Al Josephson junctions with median qubit energy relaxation times of 184 microseconds and minimal substrate-metal interface contamination.