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Antiferroelectric Altermagnets: Antiferroelectricity Alters Magnets

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arxiv 2410.06071 v3 pith:WZBSQSQJ submitted 2024-10-08 cond-mat.mtrl-sci cond-mat.mes-hall

Xunkai Duan , Jiayong Zhang , Ziye Zhu , Yuntian Liu , Zhenyu Zhang , Igor Zutic , Tong Zhou This is my paper · ORCID
classification cond-mat.mtrl-scicond-mat.mes-hall
keywords altermagnetsafeamantiferroelectricantiferroelectricitycouplingmagnetoelectricchallengedesign
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Magnetoelectric coupling is crucial for uncovering fundamental phenomena and advancing technologies in high-density data storage and energy-efficient devices. The emergence of altermagnets, which unify the advantages of ferromagnets and antiferromagnets, offers unprecedented opportunities for magnetoelectric coupling. However, electrically tuning altermagnets remains an outstanding challenge. Here, we demonstrate how this challenge can be overcome by using antiferroelectricity and ferroelectricity to modulate the spin splitting in altermagnets, employing a universal, symmetry-based design principle supported by an effective model. We introduce an unexplored class of multiferroics: antiferroelectric altermagnets (AFEAM), where antiferroelectricity and altermagnetism coexist in a single material. From first-principles calculations, we validate the feasibility of AFEAM in well-established van der Waals metal thio(seleno)phosphates and perovskite oxides. We reveal the design of AFEAM ranging from two-dimensional monolayers to three-dimensional bulk structures. Remarkably, even a weak electric field can effectively toggle spin polarization in the AFEAM by switching between antiferroelectric and ferroelectric states. Our findings not only enrich the understanding of magnetoelectric coupling but also pave the way for electrically controlled spintronic and multiferroic devices.

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Cited by 5 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Ferroelectric switchable altermagnetism

    cond-mat.mtrl-sci 2024-11 conditional novelty 7.0 of 10

    Ferroelectric polarization reversal in [C(NH2)3]Cr(HCOO)3 is predicted to switch the sign of altermagnetic spin splitting, enabling electric-field control of spin-filtering devices.

  2. Hidden fully-compensated ferrimagnetism

    cond-mat.mtrl-sci 2025-07 conditional novelty 6.0 of 10

    Bilayer CrMoC2S6 is predicted to be a hidden fully-compensated ferrimagnet: PT symmetry hides each layer's ferrimagnetic spin splitting, and an out-of-plane electric field reveals it.

  3. Hidden altermagnetism

    cond-mat.mtrl-sci 2024-11 conditional novelty 6.0 of 10

    PT-symmetric antiferromagnetic bilayers can host hidden altermagnetism, a local altermagnetic spin splitting that is globally zero and is uncovered by an electric field, as predicted for bilayer Cr2SO.

  4. Symmetry-breaking induced transition among net-zero-magnetization magnets

    cond-mat.mtrl-sci 2025-01 conditional novelty 5.0 of 10

    Starting from the PT-antiferromagnet CrC2S6, the paper predicts that Janus engineering gives an altermagnet and isovalent alloying gives fully-compensated ferrimagnets.

  5. Recent Advances in Unconventional Ferroelectrics and Multiferroics

    cond-mat.mtrl-sci 2025-08 conditional novelty 1.0 of 10

    A review of unconventional ferroelectric and multiferroic materials, surveying mechanisms, material candidates, and potential device applications.

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