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Probing Electron Spin Resonance in Monolayer Graphene

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arxiv 1611.08782 v1 pith:XLQ46HAJ submitted 2016-11-27 cond-mat.mtrl-sci cond-mat.mes-hall

classification cond-mat.mtrl-scicond-mat.mes-hall
keywords grapheneelectronmonolayerresonancespinapplicationcarriercharge
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abstract

The precise value of the $g$-factor in graphene is of fundamental interest for all spin-related properties and their application. We investigate monolayer graphene on a Si/SiO2 substrate by resistively detected electron spin resonance (ESR). Surprisingly, the magnetic moment and corresponding g-factor of 1.952+/-0.002 is insensitive to charge carrier type, concentration, and mobility.

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