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Enhancement of Critical Current Density in low level Al-doped MgB2

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arxiv cond-mat/0405567 v1 pith:XOR2GETU submitted 2004-05-24 cond-mat.supr-con

Enhancement of Critical Current Density in low level Al-doped MgB2

A. Berenov , A. Serquis , X. Z. Liao , Y. T. Zhu , D.E. Peterson , Y. Bugoslavsky , K. A. Yates , M.G. Blamire
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L. F. Cohen J.L. MacManus-Driscoll
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classification cond-mat.supr-con
keywords criticaldopingwerecurrentdifferentenhancedimprovedin-field
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Two sets of MgB2 samples doped with up to 5 at. % of Al were prepared in different laboratories using different procedures. Decreases in the a and c lattice parameters were observed with Al doping confirming Al substitution onto the Mg site. The critical temperature (Tc) remained largely unchanged with Al doping. For 1 - 2.5 at.% doping, at 20K the in-field critical current densities (Jc's) were enhanced, particularly at lower fields. At 5K, in-field Jc was markedly improved, e.g. at 5T Jc was enhanced by a factor of 20 for a doping level of 1 at.% Al. The improved Jcs correlate with increased sample resistivity indicative of an increase in the upper critical field, Hc2, through alloying.

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