Paper Citation Record · LEDGER

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles

As of 16 August 2026, this Paper Citation Record lists 48 of 48 outbound references and 0 inbound Pith citation observations for arXiv:2607.16483.

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pith.paper-citation-record.v1
2607.16483 v1

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measured 48 of 48 reference resolution

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Source: paper_references, paper_reference_links, observed 2026-08-01T20:53:35.419983Z

measured 48 of 48 standing notices

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Outbound references

Observation bb0c1ea4-8a43-4350-9e23-e6a4f7b1c567 · outbound

This paper cites The first excited state of the defect is reached by promoting an electron to the unoccupiedA′′ 1 level.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles The first excited state of the defect is reached by promoting an electron to the unoccupiedA′′ 1 level

Reference 1

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Observation 7b86a1bf-5ed7-401b-be56-c7623fac2e93 · outbound

This paper cites an unresolved cited work.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Unresolved cited work

Reference 2

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Observation 223e1655-a34e-431e-b924-67535329fbb3 · outbound

This paper cites Montblanch, Matteo Barbone, Igor Aharonovich, Mete Atatüre, and Andrea C.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Montblanch, Matteo Barbone, Igor Aharonovich, Mete Atatüre, and Andrea C

Reference 3

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Observation 277b4a99-51d0-4132-bb67-29a73388bb5f · outbound

This paper cites Spin defects in hbn as promising temperature, pressure and magnetic field quantum sen- sors.Nature Communications, 12(1):4480, Jul 2021.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Spin defects in hbn as promising temperature, pressure and magnetic field quantum sen- sors.Nature Communications, 12(1):4480, Jul 2021

Reference 4

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Observation d98df13e-035e-4ec7-a534-029ddb28a870 · outbound

This paper cites A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields.npj Computational Materials, 9(1):150, Aug 2023.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields.npj Computational Materials, 9(1):150, Aug 2023

Reference 5

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Observation 879ddc81-fdb1-4691-ae74-f3f97cc80d6e · outbound

This paper cites Martin, Demid Sychev, Alexei S.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Martin, Demid Sychev, Alexei S

Reference 6

Resolution: unresolved; no resolver link, observed 2026-08-01T20:53:30.597669Z

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Observation 55dcadac-5f60-46f6-900b-481e67517650 · outbound

This paper cites Nanoindentation for tailored single-photon emitters in hbn: Influence of annealing on defect stability.ACS Nano, 19(41):36302–36312, 2025.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Nanoindentation for tailored single-photon emitters in hbn: Influence of annealing on defect stability.ACS Nano, 19(41):36302–36312, 2025

Reference 7

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Observation 9c614eb1-882c-41ba-b154-b6ffaa49472d · outbound

This paper cites Deterministic formation of carbon-functionalized quantum emitters in hexagonal boron nitride.Nature Communications, 16(1):11450, Dec 2025.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Deterministic formation of carbon-functionalized quantum emitters in hexagonal boron nitride.Nature Communications, 16(1):11450, Dec 2025

Reference 8

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Observation 7110e86f-84c4-42ee-99e6-411d0ea7ffb1 · outbound

This paper cites Carin Gavin, Hsun-Jen Chuang, Anushka Dasgupta, Moumita Kar, Kathleen M.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Carin Gavin, Hsun-Jen Chuang, Anushka Dasgupta, Moumita Kar, Kathleen M

Reference 9

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Observation 8c8a4dce-4b8b-4ab2-821d-e51737003c3c · outbound

This paper cites Defect engineering of two- dimensional transition metal dichalcogenides.2D Ma- terials, 3(2):022002, apr 2016.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Defect engineering of two- dimensional transition metal dichalcogenides.2D Ma- terials, 3(2):022002, apr 2016

Reference 10

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Observation a0ca6cb9-d161-4327-96b4-1379e6d20da6 · outbound

This paper cites Fu, and Kyeong- jae Cho.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Fu, and Kyeong- jae Cho

Reference 11

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Observation 9a61b548-a8c1-4b28-944c-521c6bbc9bbd · outbound

This paper cites Ford, Milos Toth, and Igor Aharonovich.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Ford, Milos Toth, and Igor Aharonovich

Reference 12

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Observation e030572c-99dc-466d-8b8a-f3c9e9034747 · outbound

This paper cites Single photon sources in atomically thin materials.Annual Review of Physical Chemistry, 70(Volume 70, 2019):123–142, 2019.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Single photon sources in atomically thin materials.Annual Review of Physical Chemistry, 70(Volume 70, 2019):123–142, 2019

Reference 13

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Observation 99227959-df31-40fd-9334-fc22c54d7e34 · outbound

This paper cites Durand, T.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Durand, T

Reference 14

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Observation d2b394de-360b-42fa-9198-77ee1cfa34af · outbound

This paper cites an unresolved cited work.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Unresolved cited work

Reference 15

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Observation 4d21232e-e6fc-4686-b1ea-07fa0daeebe0 · outbound

This paper cites Controlled fabrication of freestanding monolayer sic by electron irradiation.Chinese Physics B, 33(8):086802, aug 2024.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Controlled fabrication of freestanding monolayer sic by electron irradiation.Chinese Physics B, 33(8):086802, aug 2024

Reference 16

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Observation add5d3e0-7dc1-43de-8d4e-a46a9512907b · outbound

This paper cites Bekaroglu, M.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Bekaroglu, M

Reference 17

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Observation 08d4fec4-6e49-4944-9177-8f26d8752f86 · outbound

This paper cites Yakobson.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Yakobson

Reference 18

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Observation 648d0215-3960-4161-b50f-0fd0a3631daf · outbound

This paper cites Two-dimensional sil- icon carbide: Emerging direct band gap semiconductor.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Two-dimensional sil- icon carbide: Emerging direct band gap semiconductor

Reference 19

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Observation 9393350f-f76e-4ae0-b044-bd343b980f9b · outbound

This paper cites Neutral vacancy-defect-induced magnetism in sic mono- layer.Physica E: Low-dimensional Systems and Nanos- tructures, 42(9):2451–2454, 2010.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Neutral vacancy-defect-induced magnetism in sic mono- layer.Physica E: Low-dimensional Systems and Nanos- tructures, 42(9):2451–2454, 2010

Reference 20

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Observation 5520e651-3b1f-420e-a3ed-e4342a919a36 · outbound

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Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Unresolved cited work

Reference 21

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Observation 1ed0d39c-628b-4694-8217-3582276218cd · outbound

This paper cites Hassanzada, I.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Hassanzada, I

Reference 22

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Observation 88b1d8ac-8d7b-4366-8656-27112bfd6160 · outbound

This paper cites Mahendiran and P.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Mahendiran and P

Reference 23

Resolution: unresolved; no resolver link, observed 2026-08-01T20:53:32.958477Z

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Observation 9f52b9d2-d22c-4864-b959-b6fb8b10729f · outbound

This paper cites The structural, mechanical and electrical properties of 2d sic with c-related point defects and substitution of c by foreign atoms.Vacuum, 208:111700, 2023.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles The structural, mechanical and electrical properties of 2d sic with c-related point defects and substitution of c by foreign atoms.Vacuum, 208:111700, 2023

Reference 24

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Observation 2052a3d6-95fb-4d97-abe2-8dced1595265 · outbound

This paper cites Defect-driven tunable electronic and optical proper- ties of two-dimensional silicon carbide.Phys.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Defect-driven tunable electronic and optical proper- ties of two-dimensional silicon carbide.Phys

Reference 25

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Observation 5adde94c-b55c-4fc7-9739-0c049d6df955 · outbound

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Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Unresolved cited work

Reference 26

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Observation ba74e2ee-10fb-4733-9266-9f7f797421da · outbound

This paper cites Mohseni, I.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Mohseni, I

Reference 27

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Observation 55631e8a-66f0-4802-92c5-2a600b89ce9d · outbound

This paper cites First-principles investigation of point defects in two-dimensional sic as single-photon sources.Phys.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles First-principles investigation of point defects in two-dimensional sic as single-photon sources.Phys

Reference 28

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Observation 4ae4b7cb-ead6-4bca-b18f-e30446967b94 · outbound

This paper cites Mahfuzul Haque and Sajid Muhaimin Choudhury.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Mahfuzul Haque and Sajid Muhaimin Choudhury

Reference 29

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Observation 58f2d9aa-689b-498d-abed-757e68fdb37e · outbound

This paper cites Kresse and J.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Kresse and J

Reference 30

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Observation f0aecf69-6e9b-4e22-9313-90db4bda79e7 · outbound

This paper cites Kresse and J.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Kresse and J

Reference 31

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Observation cc0086bc-e8ed-4f20-ab01-e0a2bd14fc68 · outbound

This paper cites Kresse and J.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Kresse and J

Reference 32

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Observation e87d1e49-57cd-4d8b-91ee-76a7f269418b · outbound

This paper cites Paier, M.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Paier, M

Reference 33

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Observation 9849ec99-7590-4fdc-9647-e1cf85cb4260 · outbound

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Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Unresolved cited work

Reference 34

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Observation c9001a7f-6180-4beb-b67a-020c1163f035 · outbound

This paper cites Kresse and D.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Kresse and D

Reference 35

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Observation a6c4fa9a-dfeb-4f0c-8b4d-2fd8ac047ee0 · outbound

This paper cites Johnson, and Graeme Henkelman.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Johnson, and Graeme Henkelman

Reference 36

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Observation 9e5af195-7714-48b7-8672-a367a90e3028 · outbound

This paper cites Uberuaga, and Hannes Jóns- son.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Uberuaga, and Hannes Jóns- son

Reference 37

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Observation 941ce144-336d-40d6-84fa-b3d910b2a3c7 · outbound

This paper cites Perdew, Kieron Burke, and Matthias Ernzerhof.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Perdew, Kieron Burke, and Matthias Ernzerhof

Reference 38

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Observation dc19f785-6df1-4979-bd7d-6aa68a3d6a01 · outbound

This paper cites Krukau, Oleg A.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Krukau, Oleg A

Reference 39

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Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Unresolved cited work

Reference 40

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Observation 37fae051-61cc-4fb8-8e69-26075b5b60af · outbound

This paper cites Deringer, Geoffroy Hautier, and Richard Dronskowski.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Deringer, Geoffroy Hautier, and Richard Dronskowski

Reference 41

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Observation 0416b86f-0f83-4cec-9a27-b07dbda8d941 · outbound

This paper cites Deringer, Andrei L.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Deringer, Andrei L

Reference 42

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Observation 912e512e-3cd8-4ffd-a4c4-1dfcd6bf7def · outbound

This paper cites Van de Walle.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Van de Walle

Reference 43

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Observation 2c7ad6e7-89cf-45b1-858b-1ebbf2f4746d · outbound

This paper cites First- principles calculations for charged defects at surfaces, in- terfaces, and two-dimensional materials in the presence of electric fields.Phys.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles First- principles calculations for charged defects at surfaces, in- terfaces, and two-dimensional materials in the presence of electric fields.Phys

Reference 44

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Observation 873102af-d79a-4efe-97ce-002ab23ce342 · outbound

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Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Unresolved cited work

Reference 45

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Observation 96c12028-c2ea-4e20-92f9-20a3ffc3566a · outbound

This paper cites Vasp band unfolding.https://github.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Vasp band unfolding.https://github

Reference 46

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Observation 6e2abbd2-c7e4-4480-b3ef-3a65ba396380 · outbound

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Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Unresolved cited work

Reference 47

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Observation 21267688-4601-47ad-8c75-bc74becdab1a · outbound

This paper cites Silvi and A.

Bond reconstruction and vacancy clustering in monolayer silicon carbide from first principles Silvi and A

Reference 48

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