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Role of finite layer thickness in spin-polarization of GaAs 2D electrons in strong parallel magnetic fields

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arxiv cond-mat/0301027 v2 pith:YOSVZDAX submitted 2003-01-03 cond-mat.mes-hall cond-mat.str-el

Role of finite layer thickness in spin-polarization of GaAs 2D electrons in strong parallel magnetic fields

E. Tutuc , S. Melinte , E.P. De Poortere , M. Shayegan , R. Winkler This is my paper
classification cond-mat.mes-hall cond-mat.str-el
keywords fieldparallelspin-polarizationelectrongaaslayermagneticrole
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We report measurements and calculations of the spin-polarization, induced by a parallel magnetic field, of interacting, dilute, two-dimensional electron systems confined to GaAs/AlGaAs heterostructures. The results reveal the crucial role the non-zero electron layer thickness plays: it causes a deformation of the energy surface in the presence of a parallel field, leading to enhanced values for the effective mass and g-factor and a non-linear spin-polarization with field.

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