pith. sign in

arxiv: 1907.07365 · v1 · pith:YRDNFD2Tnew · submitted 2019-07-17 · ⚛️ physics.app-ph · cond-mat.mes-hall· cond-mat.mtrl-sci

Thickness determination of MoS2, MoSe2, WS2 and WSe2 on transparent stamps used for deterministic transfer of 2D materials

Pith reviewed 2026-05-24 20:08 UTC · model grok-4.3

classification ⚛️ physics.app-ph cond-mat.mes-hallcond-mat.mtrl-sci
keywords thickness determinationoptical microscopyMoS2MoSe2WS2WSe2transition metal dichalcogenidestransparent stamps
0
0 comments X

The pith

The blue channel transmittance in optical microscopy images determines the thickness of MoS2 and related materials on transparent stamps.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper establishes that separating transmission-mode optical images into red green and blue channels yields a practical way to measure the number of layers in flakes of MoS2, MoSe2, WS2 and WSe2 sitting on transparent stamps. The blue channel shows a strong and steady change with added layers while remaining consistent from flake to flake and unaffected by doping variations in MoS2. This optical route supplies layer counts before the flakes are moved to new surfaces. Researchers who rely on deterministic transfer of these materials can therefore avoid extra instruments for thickness checks.

Core claim

The transmittance extracted from the blue channel of transmission optical microscopy images exhibits a large and monotonic dependence on layer number for MoS2, MoSe2, WS2 and WSe2 on transparent stamps, while red and green channels provide supporting information, and the blue signal stays robust against small flake-to-flake differences and doping changes.

What carries the argument

Blue channel transmittance from transmission optical images, which acts as the thickness probe because its value changes steadily with added layers.

If this is right

  • Layer numbers for these four materials can be read from ordinary optical microscope images without atomic force microscopy or Raman spectroscopy.
  • The same image analysis works across MoS2, MoSe2, WS2 and WSe2.
  • Doping changes in MoS2 do not alter the reliability of the thickness reading.
  • Small natural differences between flakes do not prevent consistent thickness assignment.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • The optical channel method could be extended to additional layered materials placed on transparent supports.
  • Image-processing routines could automate the channel analysis and reduce manual inspection time during sample preparation.
  • Recording the blue transmittance during the transfer step itself might allow real-time thickness verification.

Load-bearing premise

The measured blue transmittance is caused mainly by the number of layers in the flake rather than by differences in stamp thickness, interface quality, or lighting conditions.

What would settle it

Independent atomic force microscopy measurements on the same flakes show either non-monotonic blue transmittance values or large scatter between flakes of identical layer count.

Figures

Figures reproduced from arXiv: 1907.07365 by Andres Castellanos-Gomez, Iris Niehues, Mar Garc\'ia-Hern\'andez, Najme S. Taghavi, Patricia Gant, Peng Huang, Riccardo Frisenda, Robert Schmidt, Rudolf Bratschitsch, Steffen Michaelis de Vasconcellos.

Figure 1
Figure 1. Figure 1: (a) Optical image in transmission mode of a MoS2 flake with different thicknesses. (b) Line profiles of the intensities of the red, green and blue channels of the image in 1a. (c) Histograms of the 1-transmission value in the RGB channels for several MoS2 flakes [PITH_FULL_IMAGE:figures/full_fig_p008_1.png] view at source ↗
Figure 2
Figure 2. Figure 2: (a) Scatter plot and histogram of the blue channel transmission values for several MoS2 flakes. (b) Differential reflectance spectra for MoS2 with different number of layers. (c) Raman spectra for MoS2 with different number of layers. (d) Photoluminescence of MoS2 for different number of layers [PITH_FULL_IMAGE:figures/full_fig_p009_2.png] view at source ↗
Figure 3
Figure 3. Figure 3: Histograms of the 1-transmission value in the blue channel for MoS2 flakes doped with (a) Co, (b) Ni, (c) Fe and (d) Nb. (e) Average of the 1-transmission values for 1L to 4L in each material [PITH_FULL_IMAGE:figures/full_fig_p010_3.png] view at source ↗
Figure 4
Figure 4. Figure 4: Histograms of the 1-transmittance value in the blue channel for (a) MoS2, (b) MoSe2, (c) WS2 and (d) WSe2 flakes. (e) Average of the 1-transmittance values for 1L to 4L in each material [PITH_FULL_IMAGE:figures/full_fig_p011_4.png] view at source ↗
read the original abstract

Here, we propose a method to determine the thickness of the most common transition metal dichalcogenides (TMDCs) placed on the surface of transparent stamps, used for the deterministic placement of two-dimensional materials, by analyzing the red, green and blue channels of transmission-mode optical microscopy images of the samples. In particular, the blue channel transmittance shows a large and monotonic thickness dependence, making it a very convenient probe of the flake thickness. The method proved to be robust given the small flake-to-flake variation and the insensitivity to doping changes of MoS2. We also tested the method for MoSe2, WS2 and WSe2. These results provide a reference guide to identify the number of layers of this family of materials on transparent substrates only using optical microscopy.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 2 minor

Summary. The manuscript proposes an empirical method to determine the layer thickness of MoS2, MoSe2, WS2 and WSe2 flakes on transparent stamps by extracting red, green and blue channel transmittances from transmission-mode optical micrographs. It asserts that blue-channel transmittance exhibits a large, monotonic dependence on layer number, that flake-to-flake variation is small, and that the signal is insensitive to doping changes in MoS2, thereby providing a convenient optical guide for layer identification during deterministic transfer.

Significance. If the calibration is shown to be robust, the approach supplies a low-cost, non-destructive route to layer counting on transparent substrates using only standard optical microscopy, which would streamline workflows for 2D-material device fabrication. The result is entirely empirical; no parameter-free derivation or machine-checked proof is offered.

major comments (2)
  1. [Results] Results section: the central claim that blue-channel transmittance is a reliable thickness probe rests on the assertion of 'small flake-to-flake variation' and 'robustness,' yet the manuscript supplies no quantitative metrics (standard deviations, number of flakes measured per material, or error bars) to support these statements; without such data the monotonicity cannot be evaluated for reproducibility.
  2. [Results] Results section: the attribution of observed transmittance differences predominantly to layer number (rather than local stamp-thickness variations, stamp-flake interface quality, or illumination non-uniformity) is load-bearing for the method, but no stamp-uniformity measurements, background-subtraction protocol, or stamp-to-stamp comparison are reported; this omission directly affects the validity of using the blue channel as an isolated thickness metric.
minor comments (2)
  1. [Figures] Figure captions should explicitly state the number of flakes averaged, the illumination source, and the stamp material thickness range to allow readers to assess the controls.
  2. [Abstract] The abstract states the method was 'tested' for MoSe2, WS2 and WSe2 but provides no separate quantitative comparison or table of calibration coefficients for these materials.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for the detailed and constructive report. The two major comments identify genuine gaps in the quantitative presentation and experimental controls of our empirical method. We address each point below and will revise the manuscript to strengthen the supporting evidence without altering the core claims.

read point-by-point responses
  1. Referee: [Results] Results section: the central claim that blue-channel transmittance is a reliable thickness probe rests on the assertion of 'small flake-to-flake variation' and 'robustness,' yet the manuscript supplies no quantitative metrics (standard deviations, number of flakes measured per material, or error bars) to support these statements; without such data the monotonicity cannot be evaluated for reproducibility.

    Authors: We agree that the absence of explicit quantitative metrics weakens the reproducibility claim. The original manuscript relied on visual inspection of the plotted data points to convey small flake-to-flake variation. In the revised version we will add: (i) the exact number of flakes measured for each material (MoS2, MoSe2, WS2, WSe2), (ii) standard deviations or error bars on the blue-channel transmittance values, and (iii) a short table or inset summarizing the observed spread. These additions will allow direct evaluation of monotonicity and reproducibility. revision: yes

  2. Referee: [Results] Results section: the attribution of observed transmittance differences predominantly to layer number (rather than local stamp-thickness variations, stamp-flake interface quality, or illumination non-uniformity) is load-bearing for the method, but no stamp-uniformity measurements, background-subtraction protocol, or stamp-to-stamp comparison are reported; this omission directly affects the validity of using the blue channel as an isolated thickness metric.

    Authors: We acknowledge that the manuscript does not explicitly document stamp uniformity or the precise background-subtraction procedure. In the revision we will insert a dedicated paragraph describing the background-subtraction protocol (flat-field correction from stamp regions without flakes) and will report stamp-to-stamp transmittance uniformity measurements performed on blank stamps. These data will support the claim that layer-number contrast dominates over substrate variations under the imaging conditions used. revision: yes

Circularity Check

0 steps flagged

No circularity; empirical calibration of transmittance vs. layer count

full rationale

The paper reports direct optical measurements of red/green/blue channel transmittance for TMDC flakes of known layer numbers on transparent stamps. The central result is an observed monotonic dependence in the blue channel, presented as an empirical reference guide without any derivation, fitted parameters renamed as predictions, self-citations, or ansatzes. The method is calibrated from the data themselves and contains no load-bearing steps that reduce to their own inputs by construction.

Axiom & Free-Parameter Ledger

1 free parameters · 0 axioms · 0 invented entities

The central claim rests on empirical calibration of optical transmittance versus layer number; no free parameters, axioms, or invented entities are explicitly introduced in the abstract.

free parameters (1)
  • blue-channel transmittance calibration coefficients
    The mapping from measured blue intensity to layer number is obtained by fitting experimental data on known-thickness flakes.

pith-pipeline@v0.9.0 · 5731 in / 1174 out tokens · 25356 ms · 2026-05-24T20:08:25.758518+00:00 · methodology

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Reference graph

Works this paper leans on

45 extracted references · 45 canonical work pages

  1. [1]

    V; Jiang, D.; Zhang, Y.; Dubonos, S

    Novoselov, K.S.; Geim, A.K.; Morozov, S. V; Jiang, D.; Zhang, Y.; Dubonos, S. V; Grigorieva, I. V; Firsov, A.A. Electric Field Effect in Atomically Thin Carbon Films. Science, 2004, 306, 666–669

  2. [2]

    Production and Processing of Graphene and 2d Crystals

    Bonaccorso, F.; Lombardo, A.; Hasan, T.; Sun, Z.; Colombo, L.; Ferrari, A.C. Production and Processing of Graphene and 2d Crystals. Mater. Today, 2012, 15, 564–589

  3. [3]

    -H.; Min Kim, J.; Zirath, H.; van Wees, B.J.; van der Zant, H.; Occhipinti, L.; Di Matteo, A.; Kinloch, I.A.; Seyller, T.; Quesnel, E

    Ferrari, A.C.; Bonaccorso, F.; Fal ’ko, V.; Novoselov, K.S.; Roche, S.; B øggild, P.; Bo rini, S.; Koppens, F.H.L.; Palermo, V.; Pugno, N.; Garrido, J.A.; Sordan, R.; Bianco, A.; Ballerini, L.; Prato, M.; Lidorikis, E.; Kivioja, J.; Marinelli, C.; Ryh änen, T.; Morpurgo, A.; Coleman, J.N.; Nicolosi, V.; Colombo, L.; Fert, A.; Garcia -Hernandez, M.; Bachto...

  4. [4]

    Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A

    Radisavljevic, B. ; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single -Layer MoS2 Transistors. Nat. Nanotechnol., 2011, 6, 147–150

  5. [5]

    Electronics and Optoelectronics of Two-Dimensional Transition Metal Dichalcogenides

    Wang, Q.H.; Kalantar -Zadeh, K.; Kis, A.; Coleman, J.N.; Strano, M.S. Electronics and Optoelectronics of Two-Dimensional Transition Metal Dichalcogenides. Nat. Nanotechnol., 2012, 7, 699–712

  6. [6]

    Graphene Thickness Determination Using Reflection and Contrast Spectroscopy

    Ni, Z .H.; Wang, H.M.; Kasim, J.; Fan, H.M.; Yu, T.; Wu, Y.H.; Feng, Y.P.; Shen, Z.X. Graphene Thickness Determination Using Reflection and Contrast Spectroscopy. Nano Lett., 2007, 7, 2758–2763

  7. [7]

    Dikin, †; Sasha Stankovich, †; Supinda Watcharotone, †; Martina Hausner, § and; Rodney S

    Inhwa Jung, †; Matthew Pelton, ‡; Richard Piner, †; Dmitriy A. Dikin, †; Sasha Stankovich, †; Supinda Watcharotone, †; Martina Hausner, § and; Rodney S. Ruoff*, †. Simple Approach for High-Contrast Optical Imaging and Characterization of Graphene-Based Sheets. 2007

  8. [9]

    Optical Contrast and Clarity of Graphene on an Arbitrary Su bstrate

    Wang, X.; Zhao, M.; Nolte, D.D. Optical Contrast and Clarity of Graphene on an Arbitrary Su bstrate. Appl. Phys. Lett., 2009, 95, 81102–31901

  9. [10]

    Optical Thickness Identification of Transition Metal Dichalcogenide Na nosheets on Transparent Substrates

    Zhang, H.; Ran, F.; Shi, X.; Fang, X.; Wu, S.; Liu, Y.Y.; Zheng, X.; Yang, P.; Liu, Y.Y.; Wang, L.; Huang, X.; Li, H.; Huang, W. Optical Thickness Identification of Transition Metal Dichalcogenide Na nosheets on Transparent Substrates. Nanotechnology, 2017, 28, 164001

  10. [11]

    Investigation of Multilayer Domains in Large-Scale CVD Monolayer Graphene by Optical Imaging

    Yu, Y.; Li, Z.; Wang, W.; Guo, X.; Jiang, J.; Nan, H.; Ni, Z. Investigation of Multilayer Domains in Large-Scale CVD Monolayer Graphene by Optical Imaging. J. Semicond., 2017, 38, 33003

  11. [12]

    Thickness Identification of Two-Dimensional Materials by Optical Imaging

    Wang, Y.Y.; Gao, R.X.; Ni, Z.H.; He, H.; Guo, S.P.; Yang, H.P.; Cong, C.X.; Yu, T. Thickness Identification of Two-Dimensional Materials by Optical Imaging. Nanotechnology, 2012, 23, 495713

  12. [13]

    Boron Nitride Substrates for High -Quality Graphene Electronics

    Dean, C.R.; Young, A.F.; Meric, I.; Lee, C.; W ang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K.L.; Hone, J. Boron Nitride Substrates for High -Quality Graphene Electronics. Nat. Nanotechnol., 2010, 5, 722–726

  13. [14]

    A Transfe r Technique for High Mobility Graphene Devices on Commercially Available Hexagonal Boron Nitride

    Zomer, P.J.; Dash, S.P.; Tombros, N.; Van Wees, B.J. A Transfe r Technique for High Mobility Graphene Devices on Commercially Available Hexagonal Boron Nitride. Appl. Phys. Lett., 2011, 99, 232104

  14. [15]

    Fast Pick up Technique for High Quality Heterostructures of Bilayer Graphene and Hexagonal Boron Nitride

    Zomer, P.J.; Guimar ães, M.H.D.; Brant, J.C.; Tombros, N.; Van Wees, B.J. Fast Pick up Technique for High Quality Heterostructures of Bilayer Graphene and Hexagonal Boron Nitride. Appl. Phys. Lett., 2014, 105, 13101

  15. [16]

    Deterministic Transfer of Two -Dimensional Materials by All -Dry Viscoelastic Stamping

    Castellanos-Gomez, A.; Buscema, M.; Molenaar, R.; Singh, V.; Janssen, L.; van der Zant, H.S.J.; Steele, G.A. Deterministic Transfer of Two -Dimensional Materials by All -Dry Viscoelastic Stamping. 2D Mater. , 2014, 1, 011002

  16. [17]

    The Hot Pick-up Technique for Batch Assembly of van Der Waals Heterostructures

    Pizzocchero, F.; Gammelgaard, L.; Jessen, B.S.; Caridad, J.M.; Wang, L.; Hone, J.; B øggild, P.; Booth, T.J. The Hot Pick-up Technique for Batch Assembly of van Der Waals Heterostructures. Nat. Commun., 2016, 7, 11894

  17. [18]

    V; Castellanos-Gomez, A

    Frisenda, R.; Navarro -Moratalla, E.; Gant, P.; De Lara, D.P.; Jarillo -Herrero, P.; Gorbachev, R. V; Castellanos-Gomez, A. Recent Progress in the Assembly of Nanodevices and van Der Waals Heterostructures by Deterministic Placement of 2D Materials. Chem. Soc. Rev., 2018, 47, 53–68

  18. [19]

    Autonomous Robotic Searching and Assembly of Two -Dimensional Crystals to Build van Der Waals Superlattices

    Masubuchi, S.; Morimoto, M.; Morikawa, S.; Onodera, M.; Asakawa, Y.; Watanabe, K.; Ta niguchi, T.; Machida, T. Autonomous Robotic Searching and Assembly of Two -Dimensional Crystals to Build van Der Waals Superlattices. Nat. Commun., 2018, 9, 1413

  19. [20]

    -C.; Huang, Y.; Duan, X

    Liu, Y.; Weiss, N.O.; Duan, X.; Cheng, H. -C.; Huang, Y.; Duan, X. Van Der Waals Heterost ructures and Devices. Nat. Rev. Mater., 2016, 1, 16042

  20. [21]

    Geim, A.K.; Grigorieva, I. V. Van Der Waals Heterostructures. Nature, 2013, 499, 419–425

  21. [22]

    2D Materials and van Der Waals Heterostructures

    Novoselov, K.S.; Mishchenko, A.; Carvalho, A.; Castro Neto, A.H. 2D Materials and van Der Waals Heterostructures. Science, 2016, 353, aac9439

  22. [23]

    Atomically Thin P–n Junctions Based on Two-Dimensional Materials

    Frisenda, R.; Molina-Mendoza, A.J.; Mueller, T.; Castellanos -Gomez, A.; van der Zant, H.S.J. Atomically Thin P–n Junctions Based on Two-Dimensional Materials. Chem. Soc. Rev., 2018, 47, 3339–3358

  23. [24]

    -Y.; Galli, G.; Wang, F

    Splendiani, A.; Sun, L .; Zhang, Y.; Li, T.; Kim, J.; Chim, C. -Y.; Galli, G.; Wang, F. Emerging Photoluminescence in Monolayer MoS2. Nano Lett., 2010, 10, 1271–1275

  24. [26]

    -F.; Shi, W.; Wu, J

    Zhang, X.; Qiao, X. -F.; Shi, W.; Wu, J. -B.; Jiang, D. -S.; Tan, P. -H. Phonon and Raman Scattering of Two-Dimensional Transition Metal Dichalcogenides from Monolayer, Multilayer to Bulk Material. Chem. Soc. Rev., 2015, 44, 2757–2785

  25. [27]

    An Optical Spectroscopic Study on Two -Dimensional Group -VI Transition Metal Dichalcogenides

    Zeng, H.; Cui, X. An Optical Spectroscopic Study on Two -Dimensional Group -VI Transition Metal Dichalcogenides. Chem. Soc. Rev., 2015, 44, 2629–2642

  26. [28]

    Micro -Reflectance and Transmittance Spectroscopy: A Versatile and Powerful Tool to Characterize 2D Materials

    Frisenda, R.; Niu, Y.; Gant, P.; Molina-Mendoza, A.J.; Schmidt, R.; Bratschitsch, R.; Liu, J.; Fu, L.; Dumcenco, D.; Ki s, A.; Perez De Lara, D.; Castellanos -Gomez, A. Micro -Reflectance and Transmittance Spectroscopy: A Versatile and Powerful Tool to Characterize 2D Materials. J. Phys. D. Appl. Phys., 2017, 50, 074002

  27. [29]

    Yang, R.; Zheng, X.; Wang, Z.; Miller, C.J.; Feng, P.X. -L. Multilayer MoS2 Transistors Enabled by a Facile Dry-Transfer Technique and Thermal Annealing. J. Vac. Sci. Technol. B, Nanotechnol. Microel ectron. Mater. Process. Meas. Phenom., 2014, 32, 61203

  28. [30]

    Spatially Resolved Optical Absorption Spectroscopy of Single - and Few-Layer MoS2 by Hyperspectral Imaging

    Castellanos-Gomez, A.; Quereda, J.; van der Meulen, H.P.; Agra ït, N.; Rubio -Bollinger, G. Spatially Resolved Optical Absorption Spectroscopy of Single - and Few-Layer MoS2 by Hyperspectral Imaging. Nanotechnology, 2016, 27, 115705

  29. [31]

    Thickness -Dependent Differential Reflect ance Spectra of Monolayer and Few -Layer MoS2, MoSe2, WS2 and WSe2

    Niu, Y.; Gonzal ez-Abad, S.; Frisenda, R.; Marauhn, P.; Dr üppel, M.; Gant, P.; Schmidt, R.; Taghavi, N.; Barcons, D.; Molina -Mendoza, A.; de Vasconcellos, S.; Bratschitsch, R.; Perez De Lara, D.; Rohlfing, M.; Castellanos-Gomez, A. Thickness -Dependent Differential Reflect ance Spectra of Monolayer and Few -Layer MoS2, MoSe2, WS2 and WSe2. Nanomaterials...

  30. [32]

    From Bulk to Monolayer MoS2: Evolution of Raman Scattering

    Li, H.; Zhang, Q.; Yap, C.C.R.; Tay, B.K.; Edwin, T.H.T.; Olivier, A.; Baillargeat, D. From Bulk to Monolayer MoS2: Evolution of Raman Scattering. Adv. Funct. Mater., 2012, 22, 1385–1390

  31. [33]

    Anomalous Lattice Vibrations of Single - and Few-Layer MoS2

    Lee, C.; Yan, H.; Brus, L.E.; Heinz, T.F.; Hone, J.; Ryu, S. Anomalous Lattice Vibrations of Single - and Few-Layer MoS2. ACS Nano, 2010, 4, 2695–2700

  32. [34]

    Photoluminescence Emission and Raman Response of Monolayer MoS_2, MoSe_2, and WSe_2

    Tonndorf, P.; Schmidt, R.; B öttger, P.; Zhang, X.; B örner, J.; Liebig, A.; Albrecht, M.; Kloc, C.; Gordan, O.; Zahn, D.R.T.; Michaelis de Vasconcellos, S.; Bratschitsch, R. Photoluminescence Emission and Raman Response of Monolayer MoS_2, MoSe_2, and WSe_2. Opt. Express, 2013, 21, 4908

  33. [35]

    Atomically Thin MoS2: A New Direct -Gap Semiconductor

    Mak, K.F.; Lee, C.; H one, J.; Shan, J.; Heinz, T.F. Atomically Thin MoS2: A New Direct -Gap Semiconductor. Phys. Rev. Lett., 2010, 105, 2–5

  34. [36]

    -Y.; Galli, G.; Wang, F

    Splendiani, A.; Sun, L.; Zhang, Y.; Li, T.; Kim, J.; Chim, C. -Y.; Galli, G.; Wang, F. Emerging Photoluminescence in Monolayer MoS2. Nano Lett., 2010, 10, 1271–1275

  35. [37]

    -E.; Lin, D.-Y.; Fu, D.; Park, J.; Jung, H.J.; Chen, Y.; Ko, C.; Jang, C.; Sun, Y

    Suh, J.; Park, T. -E.; Lin, D.-Y.; Fu, D.; Park, J.; Jung, H.J.; Chen, Y.; Ko, C.; Jang, C.; Sun, Y. Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution. Nano Lett., 2014, 14, 6976–6982

  36. [38]

    -Y.; Frisenda, R.; Reuter, C.; Molina -Mendoza, A.J.; Mu ñoz, M.; Agra ït, N.; Ko, T

    Svatek, S.A.; Antolin, E.; Lin, D. -Y.; Frisenda, R.; Reuter, C.; Molina -Mendoza, A.J.; Mu ñoz, M.; Agra ït, N.; Ko, T. -S.; de Lara, D.P.; Castellanos -Gomez, A. Gate Tunable Photovoltaic Effect in MoS 2 Vertical P –n Homostructures. J. Mater. Chem. C, 2017, 5, 854–861

  37. [39]

    -Y.; Ko, T.-S.; Perez de Lara, D.; Castellanos -Gomez, A

    Reuter, C.; Frisenda, R.; Lin, D. -Y.; Ko, T.-S.; Perez de Lara, D.; Castellanos -Gomez, A. A Versatile Scanning Photocurrent Mapping System to Characterize Optoelectronic Devices Based on 2D Materials. Small Methods, 2017, 1, 1700119

  38. [40]

    Optical and Electrical Properties of MoS2 and Fe -Doped MoS2

    Wang, S.Y.; Ko, T.S.; Huang, C.C.; Huang, Y.S. Optical and Electrical Properties of MoS2 and Fe -Doped MoS2. Jpn. J. Appl. Phys., 2014, 53, 04EH07

  39. [42]

    -S.; Suenaga, K

    Dumcenco, D.O.; Kobayashi, H.; Liu, Z.; Huang, Y. -S.; Suenaga, K. Visualization and Quantification of Transition Metal Atomic Mixing in Mo 1− x W x S 2 Single Layers. Nat. Commun., 2013, 4, 1351

  40. [43]

    2 ‐Dimensional Transition Metal Dichalcogenides with Tunable Direct Band Gaps: MoS2 (1–x) Se2x Monolayers

    Mann, J.; Ma, Q.; Odenthal, P.M.; Isarraraz, M.; Le, D.; Preciado, E.; Barroso, D.; Yamaguchi, K.; von Son Palacio, G.; Nguyen, A. 2 ‐Dimensional Transition Metal Dichalcogenides with Tunable Direct Band Gaps: MoS2 (1–x) Se2x Monolayers. Adv. Mater., 2014, 26, 1399–1404

  41. [44]

    Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

    Zhang, M.; Wu, J.; Zhu, Y.; Dumcenco, D.O.; Hong, J.; Mao, N.; Deng, S.; Chen, Y.; Yang, Y.; Jin, C. Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport. ACS Nano, 2014, 8, 7130–7137

  42. [45]

    Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping

    Mouri, S.; Miyauchi, Y.; Matsuda, K. Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping. Nano Lett., 2013, 13, 5944–5948

  43. [46]

    Gwyddion: An Open -Source Software for SPM Data Analysis

    Nečas, D.; Klapetek, P. Gwyddion: An Open -Source Software for SPM Data Analysis. Open Phys., 2012, 10, 181–188

  44. [48]

    Constructing a thickness map from transmission mode optical microscopy image

  45. [49]

    First, the blue channel of t he transmission mode image is extracted and the average intensity of the substrate ( T0) is measured

    Blue channel transmittance for flakes thicker than 4 layers Constructing a thickness map from transmission mode optical microscopy image Interestingly one can directly convert a transmission mode optical microscopy image into a thickness map by using this quantitative analysis of the blue channel. First, the blue channel of t he transmission mode image is...