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Gate-induced superconductivity in a monolayer topological insulator

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arxiv 1809.04691 v1 pith:ZBKGEWRD submitted 2018-09-12 cond-mat.mes-hall cond-mat.supr-con

Ebrahim Sajadi , Tauno Palomaki , Zaiyao Fei , Wenjin Zhao , Philip Bement , Christian Olsen , Silvia Lüscher , Xiaodong Xu
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Joshua A. Folk David H. Cobden
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classification cond-mat.mes-hallcond-mat.supr-con
keywords monolayersuperconductivitytopologicalinsulatorapplyingbasisbeenbelow
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The layered semimetal WTe_2 has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We report here that intrinsic superconductivity can be induced in this monolayer 2D TI by mild electrostatic doping, at temperatures below 1 K. The 2D TI-superconductor transition can be easily driven by applying a just a small gate voltage. This discovery offers new possibilities for gate-controlled devices combining superconductivity and topology, and could provide a basis for quantum information schemes based on topological protection.

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  1. Understanding the origin of superconducting dome in electron-doped MoS$_2$ monolayer

    cond-mat.supr-con 2024-12 conditional novelty 6.0 of 10

    The superconducting dome in electron-doped MoS2 is recreated from first principles and traced to the 1x1 H to 2x2 charge-density-wave transition and later structural phases.

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