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arxiv 1905.05511 v1 pith:ZEHOYVVJ submitted 2019-05-14 cond-mat.mtrl-sci cond-mat.str-el

Pressure induced evolution of band structure in black phosphorus studied by ³¹P-NMR

classification cond-mat.mtrl-sci cond-mat.str-el
keywords pressurebandcalculationssemiconductingbeenblackdependencesgood
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Two-dimensional layered semiconductor black phosphorus (BP), a promising pressure induced Dirac system as predicted by band structure calculations, has been studied by $^{31}$P-nuclear magnetic resonance. Band calculations have been also carried out to estimate the density of states $D(E)$. The temperature and pressure dependences of nuclear spin lattice relaxation rate $1/T_1$ in the semiconducting phase are well reproduced using the derived $D(E)$, and the resultant pressure dependence of semiconducting gap is in good accordance with previous reports, giving a good confirmation that the band calculation on BP is fairly reliable. The present analysis of $1/T_1$ data with the complemental theoretical calculations allows us to extract essential information, such as the pressure dependences of $D(E)$ and chemical potential, as well as to decompose observed $1/T_1$ into intrinsic and extrinsic contributions. An abrupt increase in $1/T_1$ at 1.63GPa indicates that the semiconducting gap closes, resulting in an enhancement of conductivity.

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