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Reentrant quantum anomalous Hall effect in molecular beam epitaxy-grown MnBi2Te4 thin films

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arxiv 2401.11450 v1 pith:ZELWP6I2 submitted 2024-01-21 cond-mat.mes-hall

Yuanzhao Li , Yunhe Bai , Yang Feng , Jianli Luan , Zongwei Gao , Yang Chen , Yitian Tong , Ruixuan Liu
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Su Kong Chong Kang L. Wang Xiaodong Zhou Jian Shen Jinsong Zhang Yayu Wang Chui-Zhen Chen XinCheng Xie Xiao Feng Ke He Qi-Kun Xue
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In this study, we investigate intrinsic magnetic topological insulator MnBi2Te4 thin films grown by molecular beam epitaxy. We observe a reentrant quantum anomalous Hall effect when the Fermi energy enters the valance band and magnetic field equals zero, indicating the emergence of the Chern Anderson insulator state. The discovery opens a new avenue for realizing the QAH effect and underscores the fundamental role of both Berry curvature and Anderson localization.

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Cited by 4 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score.

  1. Quantized Topological States and Parity Anomaly in Intrinsic Quantum Anomalous Hall Insulator MnBi2Te4

    cond-mat.mes-hall 2025-07 conditional novelty 7.0 of 10

    High-field transport in high-quality 5-SL MnBi2Te4 reveals quantized topological states governed by a parity-anomaly-based index and an anomalous Landau level that produces gate-tunable edge transport.

  2. Coexistence of topologically nontrivial and trivial insulating states in topological Anderson Chern insulator

    cond-mat.dis-nn 2026-06 unverdicted novelty 6.0 of 10

    Disorder induces TACI and a coexisting zero Hall plateau insulating state in MnBi4Te7 monolayer via distinct band inversion suppression.

  3. Revisiting quadratic band crossing: from interaction-driven instability to intrinsic topology

    cond-mat.mes-hall 2026-04 unverdicted novelty 6.0 of 10

    Band inversion between orbital doublet and isolated orbital creates interaction-shielded QBCP gapped by intrinsic SOC, enabling robust QAH in proposed MNX2 monolayers.

  4. Pressure-tunable phase transitions in atomically thin Chern insulator MnBi$_2$Te$_4$

    cond-mat.mes-hall 2025-07 conditional novelty 5.0 of 10

    Pressure increases interlayer antiferromagnetic exchange and reduces the trivial transport gap in 5-SL MnBi2Te4, while the high-field Chern insulator gap stays nearly constant.

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