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arxiv 2005.11721 v1 pith:ZKWPAOMJ submitted 2020-05-24 cond-mat.mes-hall

Transport study of the wormhole effect in three-dimensional topological insulators

classification cond-mat.mes-hall
keywords wormholetopologicaltransporteffectconductancedegreedevicefind
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Inside a three-dimensional strong topological insulator, a tube with $h/2e$ magnetic flux carries a pair of protected one-dimensional linear fermionic modes. This phenomenon is known as the "wormhole effect". In this work, we find that the "wormhole effect", as a unique degree of freedom, introduces exotic transport phenomena and thus manipulates the transport properties of topological insulators. Our numerical results demonstrate that the transport properties of a double-wormhole system can be manipulated by the wormhole interference. Specifically, the conductance and local density of states both oscillate with the Fermi energy due to the interference between the wormholes. Furthermore, by studying the multi-wormhole systems, we find that the number of wormholes can also modulate the differential conductance through a $\mathbb{Z}$$_{2}$ mechanism. Finally, we propose two types of topological devices in real applications, the "wormhole switch" device and the "traversable wormhole" device, which can be finely tuned by controlling the wormhole degree of freedom.

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