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Properties and Curie Temperature (130 K) of Heavily Mn-doped Quaternary Alloy Ferromagnetic Semiconductor (InGaMn)As Grown on InP
Materials Science · Submitted 18 Mar 2003
abstract compiled · 2026-09-23 · no language-model review
The authors' main claim In the magnetic circular dicroism (MCD) measurement, large MCD intensity and high Curie temperature of 130 K were observed.
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The abstract, sentence by sentence
We have studied magnetic properties of heavily Mn-doped [(In0.44Ga0.56)0.79Mn0.21]As thin films grown by low-temperature molecular-beam epitaxy (LT-MBE) on InP substrates. The (InGaMn)As with high Mn content (21%) was obtained by decreasing the growth temperature to 190 degC. When the thickness of the [(In0.44Ga0.56)0.79Mn0.21]As layer is equal or thinner than 10 nm, the reflection high-energy electron diffraction (RHEED) pattern and transmission electron microscopy (TEM) show no MnAs clustering, indicating that a homogeneous single crystal with good quality was grown. In the magnetic circular dicroism (MCD) measurement, large MCD intensity and high Curie temperature of 130 K were observed.
background contribution method result interpretation main claim
| # | sentence | role | the authors' own work | states the main conclusion | strength |
|---|---|---|---|---|---|
| s0 | We have studied magnetic properties of heavily Mn-doped [(In0.44Ga0.56)0.79Mn0.21]As thin films grown by low-temperature molecular-beam epitaxy (LT-MBE) on InP substrates. | contribution 0.96 | 0.97 | 0.06 | asserted 0.97 |
| s1 | The (InGaMn)As with high Mn content (21%) was obtained by decreasing the growth temperature to 190 degC. | method 0.90 | 0.94 | 0.08 | asserted 1.00 |
| s2 | When the thickness of the [(In0.44Ga0.56)0.79Mn0.21]As layer is equal or thinner than 10 nm, the reflection high-energy electron diffraction (RHEED) pattern and transmission electron microscopy (TEM) show no MnAs clustering, indicating that a homogeneous single crystal with good quality was grown. | result 0.95 | 0.95 | 0.10 | asserted 0.61 |
| s3 | In the magnetic circular dicroism (MCD) measurement, large MCD intensity and high Curie temperature of 130 K were observed. | result 1.00 | 0.94 | 0.71 | asserted 1.00 |
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Original abstract
We have studied magnetic properties of heavily Mn-doped [(In0.44Ga0.56)0.79Mn0.21]As thin films grown by low-temperature molecular-beam epitaxy (LT-MBE) on InP substrates. The (InGaMn)As with high Mn content (21%) was obtained by decreasing the growth temperature to 190 degC. When the thickness of the [(In0.44Ga0.56)0.79Mn0.21]As layer is equal or thinner than 10 nm, the reflection high-energy electron diffraction (RHEED) pattern and transmission electron microscopy (TEM) show no MnAs clustering, indicating that a homogeneous single crystal with good quality was grown. In the magnetic circular dicroism (MCD) measurement, large MCD intensity and high Curie temperature of 130 K were observed.
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[ref] Comparably low conductivities (or mobilities) are also found in epitaxially grown GaAs doped with $∼10^20$ cm$^-3$ of the shallow non-magnetic acceptor Mg.
On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover · Impurity-band to disordered-valence-band crossover and high-doped metallic $GaAs:Mn$ · 0.84
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