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Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells

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arxiv cond-mat/0308420 v1 pith:6E5AE7GL submitted 2003-08-21 cond-mat

Circular Photogalvanic Effect at Inter-Band Excitation in Semiconductor Quantum Wells

V.V. Bel'kov , S.D. Ganichev , Petra Schneider , C. Back , M. Oestereich , J. Rudolph , D. Haegele , L.E. Golub
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W. Wegscheider W. Prettl
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classification cond-mat
keywords circularcpgeeffectexcitationinter-bandphotogalvanicquantumwells
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We observed a circular photogalvanic effect (CPGE) in GaAs quantum wells at inter-band excitation. The spectral dependence of the CPGE is measured together with that of the polarization degree of the time resolved photoluminescence. A theoretical model takes into account spin splitting of conduction and valence bands.

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