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NMR study of electronic state in CePt3Si

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arxiv cond-mat/0409638 v1 pith:6X2JVUJF submitted 2004-09-24 cond-mat.supr-con cond-mat.str-el

NMR study of electronic state in CePt3Si

K. Ueda , K. Hamamoto , T. Kohara , G. Motoyama , Y. Oda This is my paper
classification cond-mat.supr-con cond-mat.str-el
keywords cept3sisitesstateabovearticlebelowcenterconduction
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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In this article, we report the temperature dependence of spin-lattice relaxation rates at two Pt sites and one Si site in CePt3Si with a non-centrosymmetric structure center. 1/T1 for both Pt sites between 2 K and 300 K and 1/T1 of Si above 3 K might be explained by the contributions from the low-lying crystal-electric-field level and the quasiparticle due to the hybridization between the ground state and conduction electrons. Just below Tc no remarkable enhancement in 1/T1 was observed. The estimated value of superconducting gap is about 2Delta = 3kBTc.

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