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The influence of the long-lived quantum Hall potential on the characteristics of quantum devices

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arxiv cond-mat/0503438 v1 pith:BGQCRH2W submitted 2005-03-17 cond-mat.mes-hall

The influence of the long-lived quantum Hall potential on the characteristics of quantum devices

classification cond-mat.mes-hall
keywords quantumdeviceseffectshalllaterallong-livedmagneto-transportpotential
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Novel hysteretic effects are reported in magneto-transport experiments on lateral quantum devices. The effects are characterized by two vastly different relaxation times (minutes and days). It is shown that the observed phenomena are related to long-lived eddy currents. This is confirmed by torsion-balance magnetometry measurements of the same 2-dimensional electron gas (2DEG) material. These observations show that the induced quantum Hall potential at the edges of the 2DEG reservoirs influences transport through the devices, and have important consequences for the magneto-transport of all lateral quantum devices.

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