Intrinsic Curie temperature bistability in ferromagnetic semiconductor resonant tunneling diodes
classification
❄️ cond-mat.mes-hall
cond-mat.mtrl-sci
keywords
bistabilitycuriediluteferromagneticquantumsemiconductorballisticbarrier
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We predict bistability in the Curie temperature-voltage characteristic of double barrier resonant-tunneling structures with dilute ferromagnetic semiconductor quantum wells. Our conclusions are based on simulations of electrostatics and ballistic quantum transport combined with a mean-field theory description of ferromagnetism in dilute magnetic semiconductors.
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