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REVIEW

Electrostatic Modulation of the Superfluid Density in a Ultrathin La2-xSrxCuO4 Film

Superconductivity · Submitted 3 Mar 2006 · 27 references

Pith's verdict: Clever same-sample field-effect test of the Uemura relation that is suggestive but not airtight, because the T_c definition shares the same data as the superfluid density.

T0 · AI review

How this review was made: An AI referee (deepseek-v4-flash) read the paper on August 28, 2026 and answered a fixed list of questions about it. T0 is the starting level every paper gets. The levels describe how deeply Pith has checked the paper, never the authors.

  1. T0 AI review An AI read the paper and answered a fixed list of questions.
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  4. T3 Formal statement The claims written out in a formal math language a computer can read.
  5. T4 Proof Those claims proved, and the proof checked by computer.

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arXiv IDcond-mat/0603076 (version 2)
Pith IDNDA3QUW6, Pith's permanent record of this paper and its review
CitationA. Rufenacht, D. Caimi, J. Fompeyrine, J.-P. Locquet, P. Martinoli. "Electrostatic Modulation of the Superfluid Density in a Ultrathin La2-xSrxCuO4 Film." arXiv:cond-mat/0603076 (2006). https://pith.science/paper/NDA3QUW6
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Referee report
The paper

The paper claims

A single ultrathin cuprate film shows proportional shifts in superfluid density and critical temperature under an applied electric field.

The reading

This paper asks whether the empirical Uemura relation $T_c \propto n_{s\Box}(0)/m^*$ holds within a single underdoped cuprate sample instead of only across a series of samples with different disorder. The authors electrostatically dope a two-unit-cell-thick La$_{2-x}$Sr$_x$CuO$_4$ film through a HfO$_2$ gate and measure the sheet kinetic inductance, whose inverse is proportional to the areal superfluid density $n_{s\Box}$. They find that the field-induced relative change of the zero-temperature inverse kinetic inductance equals the relative shift of $T_c$, both varying linearly with the applied field. If correct, this would establish Uemura's proportionality on a same-sample basis and show that disorder suppresses the superfluid density more strongly than it suppresses $T_c$.

What carries the argument

The load-bearing object is the sheet kinetic inductance $L_k$ of the two-unit-cell film, measured through the mutual-inductance change of a two-coil drive-receive system; its inverse, $L_k^{-1}=e^2 n_{s\Box}/m^*$, is a direct measure of the areal superfluid density. The device is a capacitor-like mesa in which the underdoped superconducting film sits on a normal metallic LSCO buffer and is covered by a HfO$_2$ gate insulator, so the applied field alters the hole concentration within a Thomas-Fermi screening length comparable to the film thickness. The argument combines this electrostatic control with the measured universal collapse $f(t)$ and the equality of normalized shifts; equation (3) then predicts the full temperature dependence of the field-induced change of $L_k^{-1}$ from $f(t)$ and $\Delta T_c/T_c$. A mean-field treatment of disorder in d-wave superconductors is invoked to explain why disorder reduces $n_{s\Box}(0)$ more than $T_c$ while preserving their proportionality.

Extended reading notes

Core claim

The central discovery is the equality of normalized shifts: for gate fields up to $2\times10^8$ V/m, $\Delta L_k^{-1}(0,E)/L_k^{-1}(0,0)=\Delta T_c(E)/T_c(0)$, with both quantities linear in the field $E$. Because $L_k^{-1}=e^2 n_{s\Box}(0)/m^*$, this is presented as the first same-sample verification of Uemura's relation $T_c\propto n_{s\Box}(0)/m^*$ in the underdoped regime of a copper-oxide superconductor. The authors also show that the normalized temperature dependence $L_k^{-1}(T,E)/L_k^{-1}(0,E)$ collapses onto a doping-independent universal curve $f(t)$, with $t=T/T_c(E)$, whose low-temperature form follows the $t^2$ law predicted for disordered d-wave superconductors.

Load-bearing premise

The load-bearing premise is that the transition temperature $T_c(E)$, defined ad hoc by extrapolating the linear high-temperature part of the inverse kinetic inductance curve to zero, faithfully represents the thermodynamic transition; if the field changes the shape of that curve near the transition, the equality of relative shifts could be an artifact of the definition.

Editorial extensions

If this is right

  • Within the doping range probed, $T_c$ and $n_{s\Box}(0)/m^*$ vary in fixed proportion on one sample, so the Uemura scaling is not an artifact of comparing samples with different disorder.
  • The normalized inverse kinetic inductance $L_k^{-1}(T,E)/L_k^{-1}(0,E)$ is a universal function of $T/T_c(E)$, meaning the ratio of normal-fluid to superfluid density at a given reduced temperature is independent of carrier concentration in this range.
  • The low-temperature $t^2$ behaviour of $1-f(t)$ supports the theory of disordered d-wave superconductors for the quasiparticle contribution.
  • The field-induced change of $L_k^{-1}$ at arbitrary temperature is accounted for by $[f(t)-t\,df/dt]\,\Delta T_c/T_c$, which the authors verify against the measured deviations.
  • Disorder appears to suppress the zero-temperature superfluid density more efficiently than $T_c$, yet without destroying the proportionality between them.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

  • A direct extension would be to widen the gate-voltage window or vary film thickness: if the equality survives deeper into the underdoped and overdoped regimes, the proportionality would be more general than the small doping interval studied here.
  • Applying the same single-sample electrostatic method to other cuprate families, such as YBCO, could test whether the square-root scaling reported in cross-sample studies is a material property or a consequence of uncontrolled disorder.
  • The paper's electrostatic model assumes the fraction $n_{s\Box}(0)/n_\Box$ is independent of field; combining this kinetic-inductance probe with Hall measurements on the same device would test that assumption directly.
  • If the equality is robust, the gate-controlled device becomes a tunable superfluid-density platform, useful for studying superconductor-insulator or underdoped-to-overdoped transitions driven electrostatically rather than by chemical substitution.
Original abstract

By capacitively charging an underdoped ultrathin La2-xSrxCuO4 film with an electric field applied across a gate insulator with a high dielectric constant, relative changes of the areal superfluid density n_{s\Box}$ of unprecedented strength were observed in measurements of the film kinetic inductance. Although $n_{s\Box}$ appears to be substantially reduced by disorder, the data provide, for the first time on the same sample, direct compelling evidence for the Uemura relation $T_{c} \propto n_{s\Box}(T=0)$ in the underdoped regime of copper-oxide superconductors.

The compiled record

The paper's own sentences, arranged, kept beside the review and separate from it. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.

Compiled by classifier-1.13-20260917 via OpenRouter, question bank abstract-p1-20260923, 2026-09-23: 1 request, 2,530 input tokens, $0.0001 reported.

What the abstract itself states, as probabilities: claims first 0.87 · states limitation 0.53 · human participants 0.02 · controlled comparison 0.13 · randomized assignment 0.01 · states quantitative result 0.11 · compares with prior results 0.35 · mentions code or data availability 0.02.

The abstract, sentence by sentence

arXiv listing abstract v2. Results and the main claim are underlined; .

By capacitively charging an underdoped ultrathin La2-xSrxCuO4 film with an electric field applied across a gate insulator with a high dielectric constant, relative changes of the areal superfluid density n_{s\Box}$ of unprecedented strength were observed in measurements of the film kinetic inductance. Although $n_{s\Box}$ appears to be substantially reduced by disorder, the data provide, for the first time on the same sample, direct compelling evidence for the Uemura relation $T_{c} \propto n_{s\Box}(T=0)$ in the underdoped regime of copper-oxide superconductors.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#sentencerolethe authors' own workstates the main conclusionstrength
s0 By capacitively charging an underdoped ultrathin La2-xSrxCuO4 film with an electric field applied across a gate insulator with a high dielectric constant, relative changes of the areal superfluid density n_{s\Box}$ of unprecedented strength were observed in measurements of the film kinetic inductance. result 0.50 0.95 0.18 asserted 1.00
s1 Although $n_{s\Box}$ appears to be substantially reduced by disorder, the data provide, for the first time on the same sample, direct compelling evidence for the Uemura relation $T_{c} \propto n_{s\Box}(T=0)$ in the underdoped regime of copper-oxide superconductors. result 0.69 0.93 0.62 asserted 0.97

What kind of paper the classifier reports this is: empirical study 1.00 · evidence from observation or experiment 1.00.

What was examined, and what was not

sources read
  • arXiv listing abstract v2
not examined
  • full text
  • figures and tables
  • references and citing sentences
  • relations to other papers
levels run
  • P abstract
not run
  • S sections
  • T body sentences
  • C citations
  • R cross-paper relations

Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

Figures
Figure 1. To avoid short-circuits, before depositing the top
Figure 2. FIG. 2: (a) Temperature dependence of the inverse kinetic
Figure 3. FIG. 3: Comparison of the field-induced relative changes of

Figures reproduced from arXiv:cond-mat/0603076 by the authors.

References

Discussion

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