Self-assembled contacts to nanoparticles using metallic colloidal spheres

A.D. Dinsmore; C.R. Knutson; K.D. McCarthy; M.T. Tuominen; R. Shenhar; T. Emrick; T.P. Russell; V.M. Rotello

REVIEW

Self-assembled contacts to nanoparticles using metallic colloidal spheres

C.R. Knutson, K.D. McCarthy, R. Shenhar, V.M. Rotello, T. Emrick, T.P. Russell, M.T. Tuominen, A.D. Dinsmore

Soft Condensed Matter · Submitted 3 Mar 2006 · 35 references

Pith's verdict: Genuinely novel electrode self-assembly geometry with Coulomb blockade evidence, but the gate response is underdetermined and the device statistics are too thin to justify the transistor claim.

T0 · AI review

How this review was made: An AI referee (deepseek-v4-flash) read the paper on August 28, 2026 and answered a fixed list of questions about it. T0 is the starting level every paper gets. The levels describe how deeply Pith has checked the paper, never the authors.

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arXiv IDcond-mat/0603084 (version 1)

Pith IDGAZGZXPX, Pith's permanent record of this paper and its review

CitationA.D. Dinsmore, C.R. Knutson, K.D. McCarthy, M.T. Tuominen, R. Shenhar, T. Emrick, T.P. Russell, V.M. Rotello. "Self-assembled contacts to nanoparticles using metallic colloidal spheres." arXiv:cond-mat/0603084 (2006). https://pith.science/paper/GAZGZXPX

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Claim paper

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Editor's note

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The one thing to know: this paper introduces a genuinely new route to nanogap electrodes, using metallic colloidal spheres as self-assembling electrodes with the gap spontaneously set by a nanoparticle monolayer, and shows Coulomb blockade in that geometry. That is worth a look even though the evidence is thin.

What's new: previous nanogap fabrication relies on break junctions, electromigration, or lithography. Here the electrodes are microspheres coated with ligand-stabilized gold nanoparticles, and the inter-sphere gap self-organizes to tunneling distance. The demonstration of Coulomb-blockade-like suppression, plus a gate response, is a proof-of-concept for a cheap, parallel fabrication method. The no-nanoparticle control showing no suppression is a useful check. The paper also reports a transition from ohmic to tunneling behavior, plausibly tied to melting and refreezing of the low-melting-point alloy.

Where it gets soft: the evidence base is one WM device and one Al device, with no statistics or error bars, and no direct imaging of the junction. The claim that a monolayer of nanoparticles occupies the gap is inferred from electrical data and a dielectrophoretic force estimate, not observed. More importantly, the gate effect in Fig. 3 is not convincingly single-electron in origin. The same gate was used at 1400 V to pull the Al sphere into contact; the measurement then applies 207-400 V on the gate. Those fields can mechanically actuate the sphere, compress the nanoparticle/ligand layer, or leak through the 100-nm oxide (the field exceeds nominal breakdown). A nanoparticle-free control under the same gate protocol is absent, so the gate response could be a mechanical or leakage artifact rather than Coulomb blockade. The orthodox-theory curve shown uses capacitance values chosen to match the data, which further weakens the 'strong evidence' claim. The room-temperature suppression in Fig. 2 is less vulnerable to this objection, but still rests on a single device and an inferred junction structure.

None of this refutes the central idea; it means the paper is a proof-of-concept, not a validated technology. The writing is honest about some limitations (polydispersity, mechanical instability) but overstates the gate evidence.

Recommendation: send it to peer review. A serious referee can push for more statistics, direct structural characterization, and a proper gate control. For a reader, the paper is a useful pointer to a new approach, but the quantitative claims should be treated with caution.

Referee report

Significance

If the central claim holds, the work offers an inexpensive, scalable alternative to break junctions, electromigration, and high-resolution lithography for nanogap electrodes, and would be a useful demonstration of self-assembled single-electron devices. The paper's strengths are its simple concept, the room-temperature and 77-K I-V thresholds consistent with Coulomb blockade, the no-nanoparticle control for the WM devices, and the physically plausible dielectrophoretic-migration model. However, the experimental support is thin: only one device of each architecture is shown with no statistics, the junction structure is not directly imaged, and the gate-effect evidence is not controlled against mechanical or leakage artifacts. With additional device statistics and a control for the gate effect, the claims would be much stronger.

Major objections (4)

[Fig. 3 and Methods] The gate response is presented as 'strong evidence' of Coulomb blockade and of a nanoparticle monolayer, but the experiment does not exclude a mechanical or leakage channel. The same gate electrode was used during setup at Vg = 1400 V to pull the Al sphere into contact with the leads; at the Vg values of Fig. 3 (207 to 400 V) the dielectrophoretic force on the 30-μm sphere is still large enough to change the contact area or to compress the ligand/nanoparticle layer, thereby changing the tunneling resistance without any Coulomb-blockade threshold shift. In addition, 400 V across the 100-nm oxide corresponds to 4 × 10^9 V/m, above the nominal SiO2 breakdown field, so oxide charging or gate leakage beyond the small leakage current acknowledged by the authors is an uncontrolled channel. A nanoparticle-free control (or a directly shorted metal-metal contact) subjected to the same gate protocol, together with optical monitoring of the sphere position, is needed to support the single-electron-transistor interpretation.
[Fig. 2 and surrounding text] All quantitative transport claims rest on a single WM device and a single Al device, with no statistics or error bars. The four room-temperature scans in Fig. 2b are described as displaying variations, and the 77-K threshold (≈ 0.6 V) is larger than the predicted e/C ≈ 0.2–0.3 V, with the discrepancy attributed to an unmeasured multi-junction voltage division. The statement that 'similar results were obtained' for devices with Pt wires is not backed by data. Reporting a device count and a threshold distribution (and, ideally, a histogram of extracted charging energies) is necessary to show that the observed blockade is a reproducible property of the assembly rather than a single-junction accident.
[Fig. 3, gate-effect calculation] The orthodox-theory curve used to support the gate effect is not a predictive calculation: the values C = 0.25 × 10^-18 F and Cg = 5 × 10^-23 F are chosen to reproduce the observed trend, and no independent measurement of Cg or sensitivity analysis is given. The authors themselves note that polydispersity and static charges prevent quantitative agreement. Consequently, the agreement of the calculated trend with the data does not independently confirm the Coulomb-blockade interpretation; at most it shows consistency. An independent geometric estimate of Cg, a comparison of the calculated and measured dI/dVSD over the full gate range, and a prediction of a gate-periodic Coulomb feature would strengthen this evidence.
[Fig. 1 and inset] The key claim that the inter-sphere spacing is spontaneously set to allow tunneling contact with a single layer of nanoparticles is inferred entirely from the electrical behavior; no electron micrograph, cross-section, or other direct structural measurement of the gap is presented. Since the whole approach is defined by this spacing and by the presence of a nanoparticle monolayer in the junction, a direct image of the junction region (e.g., SEM/TEM of a cross-section, or at least a higher-magnification image of a coated sphere) would materially support the central claim. Without it, the 'single layer' part of the claim remains an assumption.

Minor objections (5)

[Fig. 2a] The text says the resistance dropped on increasing VSD to 1.15 V, but then says that upon decreasing bias the current dropped at VSD ≈ 1.3 V; since 1.3 V exceeds the stated maximum, this is inconsistent. Please correct the voltage values or clarify the ramp range.
[Fig. 2a inset] The 'linear plus cubic' fit is said to be typical of tunneling, but the fitting expression and its parameters/residuals are not given. Please specify the function and report the quality of the fit.
[Fig. 1] The bright-field image would benefit from a scale bar and explicit labels for the electrodes and the spheres; the text says the electrodes are shown in white with outlines added, but the outline is not visible in the reproduction.
[Gate-effect discussion] The numerical orthodox-theory curve mentioned in the gate-effect paragraph is not shown. Including it alongside the data would let the reader judge the agreement.
[Control experiments] The control experiments 'without nanoparticles' are described in one sentence. Please state how many control devices were tested and whether they were subjected to the same burn-in and gate protocols.

How Pith checks papers → · Full audit of this paper →

The paper

The paper claims

Micron-scale metallic colloidal spheres can self-assemble into tunneling contacts around a single layer of nanoparticles, producing devices that show Coulomb blockade and gate-tunable resistance.

The reading

The paper demonstrates that ordinary micron-scale metallic spheres, made of Woods Metal or aluminum, can act as electrodes for tiny electronic devices without any lithographic fabrication of a nanoscale gap. The spheres are suspended in oil with ligand-stabilized gold nanoparticles, which coat the metal surfaces; when the spheres settle onto a patterned substrate, capillary and van der Waals forces set the inter-sphere spacing to roughly the diameter of a nanoparticle, so a single layer of particles bridges the gap. The measured current is suppressed at low bias and rises sharply past a threshold, the signature of Coulomb blockade, and a gate electrode changes the device conductance. If this interpretation is right, the approach offers a simple, inexpensive, and scalable route to nanometer-scale electronic devices such as transistors.

What carries the argument

The load-bearing object is the contact between two metallic colloidal spheres, with ligand-stabilized gold nanoparticles (mean core diameter 1.7 nm) serving as both tunnel barriers and charging islands. The gap is set spontaneously: capillary, electrostatic, and van der Waals forces bring the coated spheres to a separation comparable to a nanoparticle diameter, and dielectrophoretic forces pull nanoparticles into the junction under bias. Transport proceeds by tunneling through the organic ligands, and the orthodox Coulomb blockade theory, with threshold voltage $\sim e/C$, relates the observed suppression to the small capacitance of a single nanoparticle.

Extended reading notes

Core claim

The central claim is that the electrode gap in a tunneling device can be formed spontaneously: metallic colloidal spheres coated with ligand-stabilized nanoparticles assemble in suspension, and the spacing where two spheres meet is set by attractive forces to match the size of a single nanoparticle layer. Current through such contacts initially flows through metal asperities, then switches to tunneling behavior, and the resulting current-voltage curves show a Coulomb blockade: current is strongly suppressed below roughly 0.3 V at room temperature and near 0.6 V at 77 K, consistent with orthodox theory for gold cores of about 1.4 nm diameter with 0.7-nm organic ligands. Applying a gate voltage shifts the conductance in the direction expected from the orthodox Coulomb blockade model, providing evidence that the nanoparticles act as charging islands. Control devices without nanoparticles did not show the suppression. The authors infer the junction structure from electrical behavior and force arguments rather than direct imaging.

Load-bearing premise

The load-bearing assumption is that the gap between the metal spheres is actually bridged by a single monolayer of nanoparticles and that the suppressed current and gate response come from single-electron charging of those nanoparticles, even though the junction structure was inferred from electrical data and not directly imaged.

Editorial extensions

If this is right

Nanometer-scale electrode gaps can be made by mixing and evaporating a suspension, avoiding break junctions, electromigration, or high-resolution lithography.
Because assembly happens in suspension, many devices can form at once and then be deposited over large areas at low cost.
The measured gate effect means the assembled metal-sphere and nanoparticle structure can act as a transistor whose resistance is set by an external voltage.
Room-temperature Coulomb blockade implies single-electron charging effects are accessible without cryogenic cooling in this geometry.
A broken junction can reform on its own because the gap spacing is set spontaneously rather than carved by a fabrication step.

Reading between the lines

Editorial extensions of the paper, not claims the author makes directly.

If the paper is right, the same suspension-assembly recipe should transfer to other ligand-stabilized nano-objects, making it a general route to tunnel gaps without precision lithography.
The dielectrophoretic mechanism implies the junction conductance could be written electrically during assembly, a control that this paper does not demonstrate.
Direct imaging of a sectioned junction would test whether device-to-device scatter comes mainly from nanoparticle polydispersity or from variations in junction geometry.

Original abstract

The spontaneous assembly of particles in suspension provides a strategy for inexpensive fabrication of devices with nanometer-scale control, such as single-electron transistors for memory or logic applications. A scaleable and robust method to form electrodes with the required nanometer-scale spacing, however, remains a major challenge. Here, we demonstrate a straightforward assembly approach in which metallic colloidal spheres serve as the electrodes. The devices are formed by assembly in suspension followed by deposition onto a patterned substrate. The key to this approach is that the inter-electrode (inter-sphere) spacing is spontaneously set to allow tunneling contact with a single layer of nanoparticles. The measured current exhibits the Coulomb blockade owing to the small size and large electrostatic charging energy of the nanoparticles. We show that the device resistance can be tuned by means of a gate electrode. Our results demonstrate an altogether new approach to inexpensive and large-scale fabrication of electronic devices such as transistors with nanometer-scale features.

The compiled record

The paper's own sentences, arranged, kept beside the review and separate from it. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.

Compiled by classifier-1.13-20260917 via OpenRouter, question bank abstract-p1-20260923, 2026-09-23: 1 request, 6,121 input tokens, $0.0003 reported.

What the abstract itself states, as probabilities: claims first 0.15 · states limitation 0.19 · human participants 0.02 · controlled comparison 0.03 · randomized assignment 0.01 · states quantitative result 0.07 · compares with prior results 0.17 · mentions code or data availability 0.02.

The abstract, sentence by sentence

arXiv listing abstract v1. Results and the main claim are underlined; show every role.

The spontaneous assembly of particles in suspension provides a strategy for inexpensive fabrication of devices with nanometer-scale control, such as single-electron transistors for memory or logic applications. A scaleable and robust method to form electrodes with the required nanometer-scale spacing, however, remains a major challenge. Here, we demonstrate a straightforward assembly approach in which metallic colloidal spheres serve as the electrodes. The devices are formed by assembly in suspension followed by deposition onto a patterned substrate. The key to this approach is that the inter-electrode (inter-sphere) spacing is spontaneously set to allow tunneling contact with a single layer of nanoparticles. The measured current exhibits the Coulomb blockade owing to the small size and large electrostatic charging energy of the nanoparticles. We show that the device resistance can be tuned by means of a gate electrode. Our results demonstrate an altogether new approach to inexpensive and large-scale fabrication of electronic devices such as transistors with nanometer-scale features.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#	sentence	role	the authors' own work	states the main conclusion	strength
s0	The spontaneous assembly of particles in suspension provides a strategy for inexpensive fabrication of devices with nanometer-scale control, such as single-electron transistors for memory or logic applications.	background 1.00	0.06	0.05	asserted 0.94
s1	A scaleable and robust method to form electrodes with the required nanometer-scale spacing, however, remains a major challenge.	gap 0.97	0.05	0.02	asserted 1.00
s2	Here, we demonstrate a straightforward assembly approach in which metallic colloidal spheres serve as the electrodes.	contribution 0.82	0.91	0.10	asserted 1.00
s3	The devices are formed by assembly in suspension followed by deposition onto a patterned substrate.	method 1.00	0.86	0.04	asserted 1.00
s4	The key to this approach is that the inter-electrode (inter-sphere) spacing is spontaneously set to allow tunneling contact with a single layer of nanoparticles.	method 0.80	0.75	0.15	asserted 1.00
s5	The measured current exhibits the Coulomb blockade owing to the small size and large electrostatic charging energy of the nanoparticles.	result 0.95	0.91	0.05	asserted 1.00
s6	We show that the device resistance can be tuned by means of a gate electrode.	result 0.96	0.94	0.07	asserted 1.00
s7	Our results demonstrate an altogether new approach to inexpensive and large-scale fabrication of electronic devices such as transistors with nanometer-scale features.	interpretation 0.95	0.76	0.89	asserted 1.00

What kind of paper the classifier reports this is: method or tool 0.98 · evidence from observation or experiment 1.00.

What was examined, and what was not

sources read

arXiv listing abstract v1

not examined

full text
figures and tables
references and citing sentences
relations to other papers

levels run

P abstract

not run

S sections
T body sentences
C citations
R cross-paper relations

Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

References

Works cited (35)

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Agrait, N., Yeyati, A. L. & van Ruitenbeek, J. M. Quantum properties of atomic-sized conductors. Phys. Rep. 377, 81-279 (2003)

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Krahne, R. et al. Nanoparticles and nanogaps: Controlled positioning and fabrication. Physica E 17, 498-502 (2003)

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Park, H., Lim, A. K. L., Alivisatos, A. P., Park, J. & McEuen, P. L. Fabrication of metallic electrodes with nanometer separation by electromigration. Appl. Phys. Lett. 75, 301-303 (1999)

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Khondaker, S. I. & Yao, Z. Fabrication of nanometer-spaced electrodes using gold nanoparticles. Appl. Phys. Lett. 81, 4613-4615 (2002)

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Lambert, M. F., Goffman, M. F., Bourgoin, J. P. & Hesto, P. Fabrication and characterization of sub-3 nm gaps for single-cluster and single-molecule experiments. Nanotechnology 14, 772-777 (2003)

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Persson, S. H. M., Olofsson, L. & Gunnarsson, L. A self-assembled single-electron tunneling transistor. Appl. Phys. Lett. 74, 2546-2548 (1999)

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Morpurgo, A. F., Marcus, C. M. & Robinson, D. B. Controlled fabrication of metallic electrodes with atomic separation. Appl. Phys. Lett. 74, 2084-2086 (1999)

View on Pith 1999
[18]

Steinmann, P. & Weaver, J. M. R. Fabrication of sub-5 nm gaps between metallic electrodes using conventional lithographic techniques. J. Vac. Sci. Technol. B 22, 3178-3181 (2004)

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Quake, S. R. & Scherer, A. From micro- to nanofabrication with soft materials. Science 290, 1536- 1540 (2000)

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Zhao, X. M., Xia, Y. & Whitesides, G. M. Soft lithographic methods for nano-fabrication. J. Mater. Chem. 7, 1069-1074 (1997)

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Lin, Y., Skaff, H., Emrick, T. S., Dinsmore, A. D. & Russell, T. P. Nanoparticle assembly and transport and liquid-liquid interfaces. Science 299, 226 (2003)

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[22]

Duan, H., Wang, D., Kurth, D. G. & Mohwald, H. Directing self-assembly of nanoparticles at water/oil interfaces. Ang. Chem. Int. Ed. 43, 5639 (2004)

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Reincke, T., Hickey, S. G., Kegel, W. K. & Vanmaekelbergh, D. Spontaneous assembly of a monolayer of charged gold nanocrystals at the water/oil interface. Angew. Chem.-Int. Edit. 43, 458-462 (2004)

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[24]

Nagayama, K. Two-dimensional self-assembly of colloids in thin liquid films. Colloids Surfaces A 109, 363-374 (1996)

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Israelachvili, J. N. Intermolecular and surface forces (Academic Press, Amsterdam, 2003)

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Brust, M., Fink, J., Bethell, D., Schiffrin, D. J. & Kiely, C. Synthesis and reactions of functionalized gold nanoparticles. J. Amer. Chem. Soc. (1995)

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Pieranski, P. Two-dimensional interfacial colloidal crystals. Phys. Rev. Lett. 45, 569-572 (1980)

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Knutson, C. R., Edmond, K. V., Tuominen, M. T. & Dinsmore, A. D. Shuttling of charge by a metallic sphere in viscous oil. (to be submitted to Phys. Rev. B) (2005)

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[29]

Glazman, L. I. Single electron tunneling. J. Low Temp. Phys. 118, 247-269 (2000)

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Wang, B. et al. Tunable single-electron tunneling behavior of ligand-stabilized gold particles on self- assembled monolayers. Phys. Rev. B 63 (2001)

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Lamvik, M. & Zhou, J. M. A novel technique for measuring the thermal conductivity of metallic materials during melting and solidification. Meas. Sci. Technol. 6, 880 (1995)

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Trau, M., Saville, D. A. & Aksay, I. A. Field-induced layering of colloidal crystals. Science 272, 706- 709 (1996)

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Masuda, Y. & Koumoto, K. Low dimensional particle patterning. J. Dispersion Sci. Tech. 25, 503-511 (2004). Knutson et al 7

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[34]

Knutson, C. R. Electron transport through self-assembled structures formed from metallic particles in suspension (Physics, Master's degree, University of Massachusetts, Amherst, 2004)

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[35]

Umbanhowar, P. B., Prasad, V. & Weitz, D. A. Monodisperse emulsion generation via drop break off in a coflowing stream. Langmuir 16, 347-351 (2000). Acknowledgements ADD and CRK gratefully acknowledge support from the Research Corporation Cottrell Scholarship Program and a UMass Faculty Research Grant. We also acknowledge support from the NSF-supported Ma...

View on Pith 2000

Discussion

Disagree with the review, or know something it missed? Leave a comment, highlight any passage above to comment on it, or challenge this review formally.

[1] [1]

Klein, D. L., Roth, R., Lim, A. K. L., Alivisatos, A. P. & McEuen, P. L. A single-electron transistor made from a cadmium selenide nanocrystal. Nature 389, 699-701 (1997)

View on Pith 1997

[2] [2]

Olofsson, L. G. M. et al. Nanofabrication of self-assembled molecular-scale electronics. J. Low Temp. Phys. 118, 343-353 (2000)

View on Pith 2000

[3] [3]

Yano, K. et al. Single-electron memory for giga-to-tera bit storage. Proc. IEEE 87, 633-651 (1999). Knutson et al 6

View on Pith 1999

[4] [4]

Likharev, K. K. Single-electron devices and their applications. Proc. IEEE 87, 606-632 (1999)

View on Pith 1999

[5] [5]

Fulton, T. A. & Dolan, G. J. Observation of single-electron charging effects in small tunnel-junctions. Phys. Rev. Lett. 59, 109-112 (1987)

View on Pith 1987

[6] [6]

Korotkov, A. N. Single-electron logic and memory devices. Int. J. Electronics 86, 511-547 (1999)

View on Pith 1999

[7] [7]

Reed, M. Molecular-scale electronics. Proc. IEEE 87, 652 (1999)

View on Pith 1999

[8] [8]

Agrait, N., Yeyati, A. L. & van Ruitenbeek, J. M. Quantum properties of atomic-sized conductors. Phys. Rep. 377, 81-279 (2003)

View on Pith 2003

[9] [9]

Krahne, R. et al. Nanoparticles and nanogaps: Controlled positioning and fabrication. Physica E 17, 498-502 (2003)

View on Pith 2003

[10] [10]

Kervennic, Y. V., Vanmaekelbergh, D., Kouwenhoven, L. P. & Van der Zant, H. S. J. Planar nanocontacts with atomically controlled separation. Appl. Phys. Lett. 83, 3782-3784 (2003)

View on Pith 2003

[11] [11]

Park, H., Lim, A. K. L., Alivisatos, A. P., Park, J. & McEuen, P. L. Fabrication of metallic electrodes with nanometer separation by electromigration. Appl. Phys. Lett. 75, 301-303 (1999)

View on Pith 1999

[12] [12]

Khondaker, S. I. & Yao, Z. Fabrication of nanometer-spaced electrodes using gold nanoparticles. Appl. Phys. Lett. 81, 4613-4615 (2002)

View on Pith 2002

[13] [13]

Lambert, M. F., Goffman, M. F., Bourgoin, J. P. & Hesto, P. Fabrication and characterization of sub-3 nm gaps for single-cluster and single-molecule experiments. Nanotechnology 14, 772-777 (2003)

View on Pith 2003

[14] [14]

Zabet-Khosousi, A. et al. Influence of linker molecules on charge transport through self-assembled single-nanoparticle devices. Phys. Rev. Lett. 94 (2005)

View on Pith 2005

[15] [15]

Klein, D. L., McEuen, P. L., J. E. Bowen, K., Roth, R. & Alivisatos, A. P. An approach to electrical studies of single nanocrystals. Appl. Phys. Lett. 68, 2574 (1996)

View on Pith 1996

[16] [16]

Persson, S. H. M., Olofsson, L. & Gunnarsson, L. A self-assembled single-electron tunneling transistor. Appl. Phys. Lett. 74, 2546-2548 (1999)

View on Pith 1999

[17] [17]

Morpurgo, A. F., Marcus, C. M. & Robinson, D. B. Controlled fabrication of metallic electrodes with atomic separation. Appl. Phys. Lett. 74, 2084-2086 (1999)

View on Pith 1999

[18] [18]

Steinmann, P. & Weaver, J. M. R. Fabrication of sub-5 nm gaps between metallic electrodes using conventional lithographic techniques. J. Vac. Sci. Technol. B 22, 3178-3181 (2004)

View on Pith 2004

[19] [19]

Quake, S. R. & Scherer, A. From micro- to nanofabrication with soft materials. Science 290, 1536- 1540 (2000)

View on Pith 2000

[20] [20]

Zhao, X. M., Xia, Y. & Whitesides, G. M. Soft lithographic methods for nano-fabrication. J. Mater. Chem. 7, 1069-1074 (1997)

View on Pith 1997

[21] [21]

Lin, Y., Skaff, H., Emrick, T. S., Dinsmore, A. D. & Russell, T. P. Nanoparticle assembly and transport and liquid-liquid interfaces. Science 299, 226 (2003)

View on Pith 2003

[22] [22]

Duan, H., Wang, D., Kurth, D. G. & Mohwald, H. Directing self-assembly of nanoparticles at water/oil interfaces. Ang. Chem. Int. Ed. 43, 5639 (2004)

View on Pith 2004

[23] [23]

Reincke, T., Hickey, S. G., Kegel, W. K. & Vanmaekelbergh, D. Spontaneous assembly of a monolayer of charged gold nanocrystals at the water/oil interface. Angew. Chem.-Int. Edit. 43, 458-462 (2004)

View on Pith 2004

[24] [24]

Nagayama, K. Two-dimensional self-assembly of colloids in thin liquid films. Colloids Surfaces A 109, 363-374 (1996)

View on Pith 1996

[25] [25]

Israelachvili, J. N. Intermolecular and surface forces (Academic Press, Amsterdam, 2003)

View on Pith 2003

[26] [26]

Brust, M., Fink, J., Bethell, D., Schiffrin, D. J. & Kiely, C. Synthesis and reactions of functionalized gold nanoparticles. J. Amer. Chem. Soc. (1995)

View on Pith 1995

[27] [27]

Pieranski, P. Two-dimensional interfacial colloidal crystals. Phys. Rev. Lett. 45, 569-572 (1980)

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