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Lithography-Free Fabrication of Graphene Devices

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arxiv cond-mat/0612128 v1 pith:BRUKN5Q5 submitted 2006-12-05 cond-mat.mes-hall cond-mat.supr-con

N. Staley , H. Wang , C. Puls , J. Forster , T.N. Jackson , K. McCarthy , B. Clouser , Y. Liu This is my paper · ORCID
classification cond-mat.mes-hallcond-mat.supr-con
keywords graphenedeviceslithography-freeprocessall-dryapparentavoidbehavior
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We have developed a lithography-free, all-dry process for fabricating graphene devices using an ultrathin quartz filament as a shadow mask to avoid possible contamination of graphene during lithographic process. This technique was used to prepare devices for electrical transport as well as planar tunnel junction studies of n-layer graphene (nLG), with n = 1, 2, 3 and higher. We observed localization behavior and an apparent reduction of density of states (DOS) near the Fermi energy in nLG.

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