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Imaging Electronic Correlations in Twisted Bilayer Graphene near the Magic Angle
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Imaging Electronic Correlations in Twisted Bilayer Graphene near the Magic Angle
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Twisted bilayer graphene with a twist angle of around 1.1{\deg} features a pair of isolated flat electronic bands and forms a strongly correlated electronic platform. Here, we use scanning tunneling microscopy to probe local properties of highly tunable twisted bilayer graphene devices and show that the flat bands strongly deform when aligned with the Fermi level. At half filling of the bands, we observe the development of gaps originating from correlated insulating states. Near charge neutrality, we find a previously unidentified correlated regime featuring a substantially enhanced flat band splitting that we describe within a microscopic model predicting a strong tendency towards nematic ordering. Our results provide insights into symmetry breaking correlation effects and highlight the importance of electronic interactions for all filling factors in twisted bilayer graphene.
Forward citations
Cited by 2 Pith papers
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Emerging network model in a twisted monolayer-rhombohedral graphene
In twisted monolayer–rhombohedral graphene, a realistic parameter regime hosts coexisting nearly flat localized states and quasi-1D propagating modes, forming a hybrid electronic network.
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Electronic states at twist stacking faults in rhombohedral graphite
In the chiral limit, twist stacking faults in rhombohedral graphite host nearly flat bands whose total Chern number decreases with disorder strength and eventually vanishes.
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