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arxiv: 1906.11568 · v1 · pith:6A7TD7CZnew · submitted 2019-06-27 · ❄️ cond-mat.mtrl-sci

First principle investigation of hydrogen behavior in M doped Cu₂O (M = Na, Li and Ti)

A. Larabi , A. Mahmoudi , M. Mebarki , M. Dergal This is my paper

Pith reviewed 2026-05-25 15:00 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci
keywords Cu2Ohydrogen interstitialdopingfirst-principles calculationconductivity typeband gapoptical transmittance
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0 comments X

The pith

Hydrogen changes the conductivity of Cu₂O from p-type to n-type when added with Na, Li or Ti dopants.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper uses first-principles calculations to examine how hydrogen interacts with Cu₂O that has been doped with sodium, lithium, or titanium. It reports that hydrogen sits in tetrahedral interstitial sites, narrows the band gap, and supplies n-type carriers. Sodium and lithium keep the material p-type on their own, but hydrogen overrides this to produce n-type behavior; titanium already produces n-type material and widens the gap. The work also finds that hydrogen raises optical transmittance in the doped systems.

Core claim

Density-functional calculations show that an interstitial hydrogen atom prefers the tetrahedral site in Cu₂O, lowers the band gap, and converts the conductivity from p-type to n-type. In Na- or Li-doped Cu₂O the dopants themselves preserve p-type character while hydrogen supplies the n-type carriers; Ti doping alone already produces an n-type semiconductor with a larger gap. Hydrogen further increases optical transmittance in all three M-doped cases.

What carries the argument

First-principles defect calculations that locate the stable interstitial site of hydrogen and compute its effect on the electronic density of states and formation energies in the presence of Na, Li or Ti substitutional dopants.

If this is right

  • Na or Li doping alone leaves Cu₂O p-type, but added hydrogen produces n-type material.
  • Ti doping widens the gap and already yields n-type conductivity.
  • Hydrogen lowers the gap in all cases while raising optical transmittance.
  • The tetrahedral interstitial is the preferred location for hydrogen.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Hydrogen could serve as a controllable switch for carrier type in copper-oxide-based devices.
  • The same mechanism might apply to other p-type oxides where interstitial hydrogen is mobile.
  • Device models that ignore hydrogen incorporation may mis-predict junction behavior in Cu₂O solar cells or sensors.

Load-bearing premise

The chosen density-functional method and supercell sizes give defect formation energies and band-edge positions that are accurate enough to determine conductivity type without large errors from functional choice or finite-size effects.

What would settle it

An experiment that measures carrier type in hydrogen-exposed Na-, Li- or Ti-doped Cu₂O films and finds the material remains p-type rather than switching to n-type.

Figures

Figures reproduced from arXiv: 1906.11568 by A. Larabi, A. Mahmoudi, M. Dergal, M. Mebarki.

Figure 1
Figure 1. Figure 1: (Colour online) Location of H impurity in Cu2O lattice. Cu atoms in blue color, O atoms in red and H atoms are in green. T (Tetrahedral site), BC (Bond Center site), C (Cation substitutional site) and A (Anion substitutional site). To find the preferred site of H in Cu2O, we calculated the formation energies for all hydrogen positions. We show the obtained results in table 1. The references [35, 36] give t… view at source ↗
Figure 2
Figure 2. Figure 2: (Colour online) H impurity in Cu2O lattice after relaxation. Cu atoms in blue color, O atoms in red and H atoms are in green. electrons, while for the minority-spin electrons, the band gap is 0.23 eV. The hydrogen in Cu2O decreases the band gap value of Cu2O. To improve the physical properties of Cu2O for voltaic applications, we have tried three different dopants: Sodium (Na), Lithium (Li) and Titanium (T… view at source ↗
Figure 3
Figure 3. Figure 3: (Colour online) Total density of states TDOS: (a) Pure Cu2O, (b) H doped Cu2O. 23702-4 [PITH_FULL_IMAGE:figures/full_fig_p004_3.png] view at source ↗
Figure 4
Figure 4. Figure 4: (Colour online) Total density of states TDOS: (a) Na-doped Cu2O, (b) H-Na-doped Cu2O (SD), (c) H-Na-doped Cu2O (LD). the second configuration (LD) and before relaxation, the distance between Na and H was 6.98 Å. After relaxation, this distance hardly moves to only 7.012 Å. We show the total density of states of Na doped Cu2O in figure 4 (a). The figure indicates that the Na doping decreases the band gap of… view at source ↗
Figure 5
Figure 5. Figure 5: (Colour online) Total density of states TDOS: (a) Li-doped Cu2O, (b) H-Li-doped Cu2O (SD), (c) H-Li-doped Cu2O (LD). that the Li doped Cu2O is p-type characteristic. This result agrees well with the experimental work of Kyung-Su Cho et al. [50] where they used Li doped Cu2O as p-type in p-n heterojunction. The calculated band gap of Li-doped Cu2O is 0.61 eV. From the DOS figures [figure 5 (b), figure 5 (c)… view at source ↗
Figure 6
Figure 6. Figure 6: (Colour online) Total density of states TDOS: (a) Ti-doped Cu2O, (b) H-Ti-doped Cu2O (SD), (c) H-Ti-doped Cu2O (LD) [PITH_FULL_IMAGE:figures/full_fig_p007_6.png] view at source ↗
Figure 7
Figure 7. Figure 7: (Colour online) The variation of the absorption coefficient of H inserted in M doped Cu2O compared with pure one. two peaks at 530 (0.287×105 cm−1 ) and 800 nm (0.428×105 cm−1 ). However, we noticed a small change when the M (Na, Li, Ti) atoms are at the cation sites (Cu) in the pure Cu2O. We remark the same peaks when we doped with Na with a small displacement of the second peak (from 800 to 650 nm). The … view at source ↗
read the original abstract

We study the hydrogen effect on the electronic, magnetic and optical properties of Cu$_2$O in presence of different dopants (Na, Li and Ti). The electronic properties calculations show that hydrogen changes the conductivity of Cu$_2$O from p to n-type. The results show that interstitial hydrogen atom prefers to locate in the tetrahedral site in Cu$_2$O system and it decreases the band gap value of the later. The Na or Li doping Cu$_2$O preserves the p-type conductivity of Cu$_2$O, while hydrogen is the source of n-type conductivity in Na or Li doped Cu$_2$O systems. Ti doping increases the band gap value of Cu$_2$O and makes it an n-type semiconductor. Hydrogen increases the optical transmittance of M doped Cu$_2$O.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

3 major / 0 minor

Summary. The manuscript reports first-principles calculations on the effects of interstitial hydrogen and substitutional dopants (Na, Li, Ti) on the electronic, magnetic, and optical properties of Cu₂O. Key claims include: H prefers the tetrahedral interstitial site and reduces the band gap; H switches the conductivity of undoped and Na/Li-doped Cu₂O from p-type to n-type; Ti doping increases the gap and produces n-type behavior; and H increases optical transmittance in the doped systems.

Significance. If the defect formation energies and Fermi-level positions are reliable, the work would provide useful guidance on defect engineering for Cu₂O-based transparent conductors or solar-cell absorbers. The manuscript does not, however, report any machine-checked proofs, reproducible code, or parameter-free derivations that would strengthen the assessment.

major comments (3)
  1. [Abstract] Abstract and (presumed) Methods section: no exchange-correlation functional, Hubbard U value, supercell size, k-point mesh, or convergence criteria are stated. These parameters directly control the formation energies E_f(q,E_F) that are required to locate the H donor level and to assert the p-to-n conductivity switch.
  2. [Abstract] Abstract: the claim that 'hydrogen changes the conductivity of Cu₂O from p to n-type' rests on the position of the H(+/0) level relative to the valence-band maximum. Standard GGA functionals underestimate the 2.1 eV gap by ~1 eV and misplace defect levels; without hybrid-functional alignment or explicit scissor correction, the reported donor behavior cannot be evaluated.
  3. [Abstract] Abstract: charged-defect formation energies in finite supercells (typically 2×2×2 or 3×3×3 for Cu₂O) require electrostatic corrections (Freysoldt or equivalent). Their absence shifts E_f by 0.2–0.5 eV and can move the equilibrium Fermi level across the gap, invalidating the n-type conclusion.

Simulated Author's Rebuttal

3 responses · 0 unresolved

We thank the referee for the careful and constructive review of our manuscript. We address each major comment below and will revise the manuscript to improve transparency on methods and limitations.

read point-by-point responses

  1. Referee: [Abstract] Abstract and (presumed) Methods section: no exchange-correlation functional, Hubbard U value, supercell size, k-point mesh, or convergence criteria are stated. These parameters directly control the formation energies E_f(q,E_F) that are required to locate the H donor level and to assert the p-to-n conductivity switch.

    Authors: We agree that the computational parameters were not stated in the abstract or methods. We will add a dedicated Methods section in the revised manuscript that specifies the exchange-correlation functional, any Hubbard U values, supercell sizes, k-point meshes, and convergence criteria used for the defect calculations. This will allow proper evaluation of the reported formation energies and conductivity type. revision: yes

  2. Referee: [Abstract] Abstract: the claim that 'hydrogen changes the conductivity of Cu₂O from p to n-type' rests on the position of the H(+/0) level relative to the valence-band maximum. Standard GGA functionals underestimate the 2.1 eV gap by ~1 eV and misplace defect levels; without hybrid-functional alignment or explicit scissor correction, the reported donor behavior cannot be evaluated.

    Authors: We acknowledge that GGA underestimates the experimental gap of Cu₂O and can affect absolute defect level positions. Our conclusions on the p-to-n switch are drawn from the relative position of the H defect level within the calculated GGA gap. We will revise the manuscript to explicitly discuss this approximation's limitations and note that the donor character is observed within the GGA framework. No hybrid-functional or scissor-corrected calculations were performed. revision: partial

  3. Referee: [Abstract] Abstract: charged-defect formation energies in finite supercells (typically 2×2×2 or 3×3×3 for Cu₂O) require electrostatic corrections (Freysoldt or equivalent). Their absence shifts E_f by 0.2–0.5 eV and can move the equilibrium Fermi level across the gap, invalidating the n-type conclusion.

    Authors: The referee is correct that electrostatic corrections are needed for charged defects in finite supercells. Our original calculations did not apply such corrections. We will revise the manuscript to include appropriate finite-size corrections (e.g., Freysoldt scheme), recompute the relevant formation energies, and update the Fermi-level positions and conductivity conclusions accordingly. revision: yes

Circularity Check

0 steps flagged

No circularity: direct DFT outputs with no fitted predictions or self-referential definitions

full rationale

The manuscript reports electronic, magnetic and optical properties obtained from standard first-principles DFT calculations on interstitial hydrogen and M dopants in Cu2O. No equations are presented that define a quantity in terms of itself, no parameters are fitted to a data subset and then relabeled as a prediction, and no load-bearing claims rest on self-citations or uniqueness theorems imported from the authors' prior work. The reported p-to-n conductivity switch is stated as a direct computational result rather than a quantity constructed from the input data by definition. This is the normal, non-circular outcome for a pure computational study whose central claims are externally falsifiable against experiment or higher-level theory.

Axiom & Free-Parameter Ledger

0 free parameters · 0 axioms · 0 invented entities

Review is abstract-only; standard DFT assumptions are inferred but not verifiable. No free parameters, axioms or invented entities are explicitly stated in the provided text.

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Works this paper leans on

58 extracted references · 58 canonical work pages · 1 internal anchor

  1. [1]

    )NTROduCTION Owingtohighopticalabsorptioncoefficient,non-toxicity,abundancyandinexpensivelayerformation, copper oxide (CuxO) is appealing to a renewed and rising interest. It could have a potential role in fabricating semiconductor devices, among others, for nanoelectronic, spintronic and photovoltaic appli- cations[1–3].Weknowcopperoxideasap-typesemiconduc...

    work page internal anchor Pith review Pith/arXiv arXiv 1906

  2. [2]

    For treatment of the exchange and correlation energies, we used the generalized gradient approximation (GGA) [26] with projector-augmented wave (PAW) [25, 27] pseudo-potentials

    COMPuTATIONALdeTAILS We usedab initio total-energy and molecular-dynamics program VASP (Viennaab initio simulation program) developed at the Fakultät für Physik of the Universität Wien [24, 25], to do all calculations. For treatment of the exchange and correlation energies, we used the generalized gradient approximation (GGA) [26] with projector-augmented...

    work page

  3. [3]

    (ydROgeNINCu2O InCu 2Olatticewecanattributedifferentsubstitutionalandinterstitialpositionstohydrogenimpurity

    2eSuLTSANddISCuSSION 3.1. (ydROgeNINCu2O InCu 2Olatticewecanattributedifferentsubstitutionalandinterstitialpositionstohydrogenimpurity. Figure1illustratesallpositionswherecopper,oxygenandhydrogenatomsare,respectively,represented by blue, red and green spheres. In this figure, we notice four possible sites for the hydrogen impurity, 23702-2 FIRSTPRINCIPLEINV...

    work page

  4. [4]

    CONCLuSION We studied the electronic properties of M-doped Cu2O (M= Na, Li, Ti) with and without hydrogen by first-principles calculations. The results show that hydrogen is most stable in the tetrahedral site with thelowformationenergy.InterstitialhydrogenreducesthebandgapvalueofCu 2Oanditgivesann-type conduction behavior. Adding hydrogen does not decreas...

    work page

  5. [5]

    Olsen L.C., Bohara R.C., Urie M.W., Appl. Phys. Lett., 1979,34, 47, doi:10.1063/1.90593

    work page doi:10.1063/1.90593 1979

  6. [6]

    Rakhshani A.E., Solid-State Electron., 1986,29, 7, doi:10.1016/0038-1101(86)90191-7

    work page doi:10.1016/0038-1101(86)90191-7 1986

  7. [7]

    Toth R.S., Kilkson R., Trivich D., J. Appl. Phys., 1960,31, 1117, doi:10.1063/1.1735756

    work page doi:10.1063/1.1735756 1960

  8. [8]

    O’Keeffe M., Moore W.J., J. Chem. Phys., 1961,35, 1324, doi:10.1063/1.1732045

    work page doi:10.1063/1.1732045 1961

  9. [9]

    McKinzie H.L., O’Keeffe M., Phys. Lett. A, 1967,24, 137, doi:10.1016/0375-9601(67)90728-1

    work page doi:10.1016/0375-9601(67)90728-1 1967

  10. [10]

    Nanotechnol., 2013,3, 62–74, doi:10.5923/j.nn.20130303.06

    Sagadevan S., Nanosci. Nanotechnol., 2013,3, 62–74, doi:10.5923/j.nn.20130303.06

    work page doi:10.5923/j.nn.20130303.06 2013

  11. [11]

    Kiliç Ç., Zunger A., Phys. Rev. B, 2003,68, 075201, doi:10.1103/PhysRevB.68.075201

    work page doi:10.1103/physrevb.68.075201 2003

  12. [12]

    Otte K., Lippold G., Hirsch D., Gebhardt R.K., Chassé T., Appl. Surf. Sci., 2001,179, 203, doi:10.1016/S0169-4332(01)00280-X

    work page doi:10.1016/s0169-4332(01)00280-x 2001

  13. [13]

    KolkovskyVl.,KolkovskyV.,BondeNielsenK.,DobaczewskiL.,KarczewzkiG.,NylandstedLarsenA.,Phys. Rev. B, 2009,80, 165205, doi:10.1103/PhysRevB.80.165205

    work page doi:10.1103/physrevb.80.165205 2009

  14. [14]

    Bekisli F., Stavola M., Beall Fowler W., Boatner L., Spahr E., Lüpke G., Phys. Rev. B, 2011,84, 035213, doi:10.1103/PhysRevB.84.035213

    work page doi:10.1103/physrevb.84.035213 2011

  15. [15]

    Mater., 2007,6, 44, doi:10.1038/nmat1795

    Janotti A., Van de Walle C.G., Nat. Mater., 2007,6, 44, doi:10.1038/nmat1795

    work page doi:10.1038/nmat1795 2007

  16. [16]

    BihlerC.,GerstmannU.,HoebM.,GrafT.,GjukicM.,SchimdtW.G.,StutzmannM.,BrandtM.S.,Phys.Rev.B, 2009,80, 205205, doi:10.1103/PhysRevB.80.205205

    work page doi:10.1103/physrevb.80.205205 2009

  17. [17]

    Van de Walle C.G., Phys. Rev. Lett., 2000,85, 1012, doi:10.1103/PhysRevLett.85.1012

    work page doi:10.1103/physrevlett.85.1012 2000

  18. [18]

    Larabi A., Mebarki M., Sari A., Merad G., J. Magn. Magn. Mater., 2018,446, 192–199, doi:10.1016/j.jmmm.2017.09.029

    work page doi:10.1016/j.jmmm.2017.09.029 2018

  19. [19]

    Electron

    Rak Z.S., Mahanti S.D., Mandal K.C., J. Electron. Mater., 2009,38, 1539, doi:10.1007/s11664-009-0751-1

    work page doi:10.1007/s11664-009-0751-1 2009

  20. [20]

    Larabi A., Merad G., Abdellaoui I., Sari A., Solid State Commun., 2016,239, 44–48, doi:10.1016/j.ssc.2016.04.011

    work page doi:10.1016/j.ssc.2016.04.011 2016

  21. [21]

    Varley J.B., Janotti A., Singh A.K., Van de Walle C.G., Phys. Rev. B, 2009,79, 245206, doi:10.1103/PhysRevB.79.245206

    work page doi:10.1103/physrevb.79.245206 2009

  22. [22]

    Filippone F., Mattioli G., Alippi P., Amore Bonapasta A., Phys. Rev. B, 2009,80, 245203, doi:10.1103/PhysRevB.80.245203

    work page doi:10.1103/physrevb.80.245203 2009

  23. [23]

    CoxS.F.J.,DavisE.A.,CottrellS.P.,KingP.J.C.,LordJ.S.,GilJ.M.,AlbertoH.V.,VilãoR.C.,PirotoDuarteJ., Ayres de Campos N., Weidinger A., Lichti R.L., Irvine S.J.C., Phys. Rev. Lett., 2001,86, 2601, doi:10.1103/PhysRevLett.86.2601

    work page doi:10.1103/physrevlett.86.2601 2001

  24. [24]

    Hofmann D.M., Hofstaetter A., Leiter F., Zhou H., Henecker F., Meyer B.K., Orlinskii S.B., Schmidt J., Baranov P.G., Phys. Rev. Lett., 2002,88, 045504, doi:10.1103/PhysRevLett.88.045504

    work page doi:10.1103/physrevlett.88.045504 2002

  25. [25]

    Shimomura K., Nishiyama K., Kadono R., Phys. Rev. Lett., 2002,89, 255505, doi:10.1103/PhysRevLett.89.255505

    work page doi:10.1103/physrevlett.89.255505 2002

  26. [26]

    Peacock P.W., Robertson J., Appl. Phys. Lett., 2003,83, 2025, doi:10.1063/1.1609245

    work page doi:10.1063/1.1609245 2003

  27. [27]

    Scanlon D.O., Watson G.W., Phys. Rev. Lett., 2011,106, 186403, doi:10.1103/PhysRevLett.106.186403

    work page doi:10.1103/physrevlett.106.186403 2011

  28. [28]

    Kresse G., Furthmüller J., Phys. Rev. B, 1996,54, 11169, doi:10.1103/PhysRevB.54.11169

    work page doi:10.1103/physrevb.54.11169 1996

  29. [29]

    Kresse G., Joubert D., Phys. Rev. B, 1999,59, 1758, doi:10.1103/PhysRevB.59.1758

    work page doi:10.1103/physrevb.59.1758 1999

  30. [30]

    Perdew J.P., Burke K., Ernzerhof M., Phys. Rev. Lett., 1969,77, 3865, doi:10.1103/PhysRevLett.77.3865

    work page doi:10.1103/physrevlett.77.3865 1969

  31. [31]

    Blöchl P.E., Phys. Rev. B, 1994,50, 17953, doi:10.1103/PhysRevB.50.17953

    work page doi:10.1103/physrevb.50.17953 1994

  32. [32]

    Status Solidi B, 1970,42, 305–310, doi:10.1002/pssb.19700420131

    Hallberg J., Hanson R.C., Phys. Status Solidi B, 1970,42, 305–310, doi:10.1002/pssb.19700420131

    work page doi:10.1002/pssb.19700420131 1970

  33. [33]

    Status Solidi A, 1974,25, 69–76, doi:10.1002/pssa.2210250103

    Manghnani M.H., Brower W.S., Parker H.S., Phys. Status Solidi A, 1974,25, 69–76, doi:10.1002/pssa.2210250103

    work page doi:10.1002/pssa.2210250103 1974

  34. [34]

    SKB-TR–11-08, Swedish Nuclear Fuel and Waste Management Co., Stockholm, 2011

    Korzhavyi P.A., Johansson B., Literature Review on the Properties of Cuprous Oxide Cu2O and the Process of Copper Oxidation, No. SKB-TR–11-08, Swedish Nuclear Fuel and Waste Management Co., Stockholm, 2011

    work page 2011

  35. [35]

    Laskowski R., Blaha P., Schwarz K., Phys. Rev. B, 2003,67, 075102, doi:10.1103/PhysRevB.67.075102. 23702-10 FIRSTPRINCIPLEINVESTIgATIONOFHyDROgENBEHAVIORIN-DOPEDCU 2/(-=.A,,IAND4I)

    work page doi:10.1103/physrevb.67.075102 2003

  36. [36]

    Zheng C., Tao Y., Cao J.-Z, Chen R.-F., Zhao P., Wu X.-J., Huang W., J. Mol. Model., 2012,18, 4929, doi:10.1007/s00894-012-1483-3

    work page doi:10.1007/s00894-012-1483-3 2012

  37. [37]

    Reshak A.H., Auluck S., Phys. Rev. B, 2003,68, 125101, doi:10.1103/PhysRevB.68.125101

    work page doi:10.1103/physrevb.68.125101 2003

  38. [38]

    Melrose D.B., Stoneham R.J., J. Phys. A: Math. Gen., 1977,10, L17, doi:10.1088/0305-4470/10/1/004

    work page doi:10.1088/0305-4470/10/1/004 1977

  39. [39]

    Van de Walle C.G., Denteneer P.J.H., Bar-Yam Y., Pantelides S.T., Phys. Rev. B, 1989,39, 10791, doi:10.1103/PhysRevB.39.10791

    work page doi:10.1103/physrevb.39.10791 1989

  40. [40]

    (Ed.), Academic Press, Boston, 1999, 479–502

    NeugebauerJ.,VandeWalleC.G.,In:HydrogeninSemiconductorsII,SemiconductorsandSemimetals,Vol.61, Nickel N.H. (Ed.), Academic Press, Boston, 1999, 479–502

    work page 1999

  41. [41]

    Phys.: Condens

    Cox S.F.J., Lord J.S., Cottrell S.P., Gil J.M., Alberto H.V., Keren A., Prabhakaran D., Scheuermann R., Stoykov A., J. Phys.: Condens. Matter, 2006,18, 1061, doi:10.1088/0953-8984/18/3/021

    work page doi:10.1088/0953-8984/18/3/021 2006

  42. [42]

    McCluskey M.D., Tarun M.C., Teklemichael S.T., J. Mater. Res., 2012,27, 2190, doi:10.1557/jmr.2012.137

    work page doi:10.1557/jmr.2012.137 2012

  43. [43]

    Mollwo E., Z. Angew. Phys., 1954,138, 478, doi:10.1007/BF01340694

    work page doi:10.1007/bf01340694 1954

  44. [44]

    Thomas D.G., Lander J.J., J. Chem. Phys., 1956,25, 1136, doi:10.1063/1.1743165

    work page doi:10.1063/1.1743165 1956

  45. [45]

    Lander J.J., J. Phys. Chem. Solids, 1957,3, 87, doi:10.1016/0022-3697(57)90053-7

    work page doi:10.1016/0022-3697(57)90053-7 1957

  46. [46]

    Kittel C., Introduction to Solid State Physics, 6-th Ed., Wiley, New York, 1986

    work page 1986

  47. [47]

    MarksteinerP.,BlahaP.,SchwarzK.,Z.Phys.B:Condens.Matter,1986, 64,119–127,doi:10.1007/BF01303692

    work page doi:10.1007/bf01303692 1986

  48. [48]

    Martínez-Ruiz A., Moreno Ma.G., Takeuchi N., Solid State Sci., 2003,5, 291–295, doi:10.1016/S1293-2558(03)00003-7

    work page doi:10.1016/s1293-2558(03)00003-7 2003

  49. [49]

    SoonA.,TodorovaM.,DelleyB.,StampflC.,Phys.Rev.B,2006, 73,165424,doi:10.1103/PhysRevB.73.165424

    work page doi:10.1103/physrevb.73.165424 2006

  50. [50]

    Islam M.M., Diawara B., Maurice V., Marcus P., J. Mol. Struct. THEOCHEM, 2009,903, 41–48, doi:10.1016/j.theochem.2009.02.037

    work page doi:10.1016/j.theochem.2009.02.037 2009

  51. [51]

    Elfadill N.G., Hashim M.R., Chahrour K.M., Mohammed S.A., Semicond. Sci. Technol., 2016,31, 065001, doi:10.1088/0268-1242/31/6/065001

    work page doi:10.1088/0268-1242/31/6/065001 2016

  52. [52]

    Minami T., Nishi Y., Miyata T., Appl. Phys. Express, 2015,8, 022301, doi:10.7567/apex.8.022301

    work page doi:10.7567/apex.8.022301 2015

  53. [53]

    Minami T., Yamazaki J., Miyata T., MRC Communcations, 2016,6, 416–420, doi:10.1557/mrc.2016.45

    work page doi:10.1557/mrc.2016.45 2016

  54. [54]

    Int., 2016,43, 2279–2287, doi:10.1016/j.ceramint.2016.10.208

    Cho K.-S., Kim D.-H., Kim Y.-H., Nah J., Kim H.-K., Ceram. Int., 2016,43, 2279–2287, doi:10.1016/j.ceramint.2016.10.208

    work page doi:10.1016/j.ceramint.2016.10.208 2016

  55. [55]

    Lu Y.-M., Chen C.-Y., Lin M.H., Thin Solid Films, 2005,480–481, 482–485, doi:10.1016/j.tsf.2004.11.083

    work page doi:10.1016/j.tsf.2004.11.083 2005

  56. [56]

    Ishizuka S., Kato S., Okamoto Y., Akimoto K., Appl. Phys. Lett., 2002,80, 950, doi:10.1063/1.1448398

    work page doi:10.1063/1.1448398 2002

  57. [57]

    Ishizuka S., Kato S., Okamoto Y., Sakurai T., Akimoto K., Fujiwara N., Kobayashi H., Appl. Surf. Sci., 2003, 216, 94, doi:10.1016/S0169-4332(03)00485-9

    work page doi:10.1016/s0169-4332(03)00485-9 2003

  58. [58]

    Coey J.M.D., Solid State Sci., 2005,7, 660–667, doi:10.1016/j.solidstatesciences.2004.11.012. Першопринципне дослIдження поведIнки водню у --легованомуCu 2O(- =.A,,II4I) A.ЛярабI1,A.МахмудI2,-.МебаркI1,-.Дергал2 1 Науково-дослIдний центр з технологIї напIвпровIдникIв для енергетики(C243E),B0140Алжир7-Мервей 16038,Алжир 2 ВIддIлення вивчення та прогнозуван...

    work page doi:10.1016/j.solidstatesciences.2004.11.012 2005