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Vanadium in Silicon Carbide: Telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions

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arxiv 2206.06240 v1 pith:L5CQNZTL submitted 2022-06-13 quant-ph

Vanadium in Silicon Carbide: Telecom-ready spin centres with long relaxation lifetimes and hyperfine-resolved optical transitions

T. Astner , P. Koller , C. M. Gilardoni , J. Hendriks , N. T. Son , I. G. Ivanov , J. U. Hassan , C. H. van der Wal
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M. Trupke
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classification quant-ph
keywords spinvanadiumcarbidecharacterizationchargedynamicsensemblelevel
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Vanadium in silicon carbide (SiC) is emerging as an important candidate system for quantum technology due to its optical transitions in the telecom wavelength range. However, several key characteristics of this defect family including their spin relaxation lifetime (T1), charge state dynamics, and level structure are not fully understood. In this work, we determine the T1 of an ensemble of vanadium defects, demonstrating that it can be greatly enhanced at low temperature. We observe a large spin contrast exceeding 90% and long spin-relaxation times of up to 25s at 100mK, and of order 1s at 1.3K. These measurements are complemented by a characterization of the ensemble charge state dynamics. The stable electron spin furthermore enables high-resolution characterization of the systems' hyperfine level structure via two-photon magneto-spectroscopy. The acquired insights point towards high-performance spin-photon interfaces based on vanadium in SiC.

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Cited by 2 Pith papers

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  2. Quantum communication networks with defects in silicon carbide

    quant-ph 2024-03 unverdicted novelty 3.0

    The paper overviews prominent SiC defects for spin-photon interfaces and models a memory-enhanced quantum communication protocol to extract parameters needed to outperform direct point-to-point links.