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Orbital Hall Responses in Disordered Topological Materials
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Orbital Hall Responses in Disordered Topological Materials
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We report an efficient numerical approach to compute the different components of the orbital Hall responses in disordered topological materials from the Berry phase theory of magnetization. The theoretical framework is based on the Chebyshev expansion of Green's functions and the off-diagonal elements of the position operator for systems under arbitrary boundary conditions. The capability of this scheme is shown by computing the orbital Hall conductivity for gapped graphene and the Haldane model in the presence of nonperturbative disorder effects. This methodology enables realistic simulations of orbital Hall responses in highly complex models of disordered materials.
Forward citations
Cited by 1 Pith paper
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Orbital Hall effect in spin-3/2 hole-doped semiconductors and its implications for orbitronics
Holes in p-type Ge show an orbital Hall conductivity roughly 6000 times its spin Hall conductivity, positioning Ge as a strong orbitronic material.
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