High-speed and high-connectivity two-qubit gates in long chains of trapped ions
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We present a theoretical study of fast all-to-all entangling gates in trapped-ion quantum processors, based on impulsive excitation of spin-dependent motion with broadband laser pulses. Previous studies have shown that such fast gate schemes are highly scalable and naturally performant outside the Lamb-Dicke regime, however are limited to nearest-neighbour operations. Here we demonstrate that impulsive spin-dependent excitation can be used to perform high-fidelity non-local entangling operations in quasi-uniform chains of up to 40 ions. We identify a regime of phonon-mediated entanglement between arbitrary pairs of ions in the chain, where any two pairs of ions in the chain can be entangled in approximately 1.3-2 centre-of-mass oscillation periods. We assess the experimental feasibility of the proposed gate schemes, which reveals pulse error requirements that are weakly dependent on the length of the ion chain and the distance between the target qubits. These results suggest entangling gates based on impulsive spin-dependent excitation presents new possibilities for large-scale computation in near-term ion-trap devices.
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Cited by 3 Pith papers
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A scheme using modulated Raman pulses achieves spin-dependent kick infidelities below 10^{-5} in trapped ions despite micromotion by optimizing RF parameters to cancel backward kicks.
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Radial Fast Entangling Gates Under Micromotion in Trapped-Ion Quantum Computers
Micromotion enables high-fidelity fast entangling gates on radial modes of trapped-ion crystals with operation times of hundreds of nanoseconds.
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