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arxiv: 2509.00430 · v1 · submitted 2025-08-30 · ❄️ cond-mat.mtrl-sci · cond-mat.mes-hall

Sliding-induced ferrovalley polarization and possible antiferromagnetic half-metal in bilayer altermagnets

Xin Zhang , Shihao Zhang This is my paper

Pith reviewed 2026-05-18 19:43 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci cond-mat.mes-hall
keywords altermagnetsferrovalleyvalley polarizationinterlayer slidingantiferromagnetic half-metalbilayervalley splittingspin-valley coupling
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The pith

Interlayer sliding in bilayer altermagnets breaks valley degeneracy to create ferrovalley polarization and antiferromagnetic half-metals.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper shows that sliding the layers of certain bilayer altermagnets breaks the valley degeneracy that exists in their single-layer versions. This sliding action produces a ferrovalley phase where valley states become polarized and can even turn the material into an antiferromagnetic half-metal, as seen in V2SSeO. Calculations indicate the largest splitting occurs in Mo2O2O at about 0.31 electron volts, and bigger differences in atom types between layers increase the effect. Readers should care as this offers a way to control valley properties using only the material's structure, without external electric fields.

Core claim

Through first-principles calculations and a minimal microscopic model, the authors show that interlayer sliding in M2A2B and M2AA'B bilayer altermagnets breaks the valley degeneracy at high-symmetry points, realizing an emergent ferrovalley phase and a sliding-driven antiferromagnetic half-metal in V2SSeO. Mo2O2O exhibits the largest valley splitting gap of approximately 0.31 eV, and larger atomic number differences between A and A' atoms enhance the polarization in Mo2AA'O systems. This establishes a new platform for ferrovalley states in altermagnetic systems.

What carries the argument

Interlayer sliding that couples to the altermagnetic spin splitting and valley degrees of freedom to lift the X and Y point degeneracies in the bilayer.

If this is right

  • Interlayer sliding drives the system to an antiferromagnetic half-metal state in V2SSeO.
  • Mo2O2O reaches a valley splitting gap of about 0.31 eV, positioning it for valley-spin valve applications.
  • Increasing the atomic number difference between A and A' sites boosts valley polarization in Mo2AA'O bilayers.
  • Ferrovalley phases appear in these systems without any applied electric field.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • The sliding-induced effect might apply to other bilayer magnetic materials to induce valley polarization via mechanical means.
  • Such systems could enable mechanically tunable valleytronic devices that avoid voltage-based control.
  • Mo2O2O with its large splitting could serve as a platform to test predictions of spin-valley interactions experimentally.

Load-bearing premise

The first-principles calculations and minimal microscopic model accurately describe the electronic structure changes from interlayer sliding, including valley splitting and half-metallicity, without significant errors from DFT approximations or unmodeled lattice effects.

What would settle it

Experimental measurement of a ~0.31 eV valley splitting in the band structure of slid Mo2O2O bilayers or confirmation of half-metallic behavior in V2SSeO under specific sliding configurations.

read the original abstract

Altermagnets, a newly discovered class of materials, exhibit zero net magnetization while hosting spin-split electronic bands. However, monolayer altermagnets maintain degenerate band gaps at the high-symmetry X and Y points in the Brillouin zone, manifesting a paravalley phase characterized by unpolarized valley states. In this work, we demonstrate that spontaneously broken valley degeneracy can be achieved through interlayer sliding in engineered M$_2$A$_2$B and M$_2$AA$'$B bilayer altermagnets by first-principles calculations and minimal microscopic model. We propose a promising route to achieve antiferromagnetic half-metal driven by sliding and emergent ferrovalley phase without applied electric field, which is realized in the V$_2$SSeO engineered bilayer. Our calculations also reveal that Mo$_2$O$_2$O exhibits the largest valley splitting gap of ~0.31 eV, making it a promising candidate for valley-spin valve devices. Furthermore, band structure calculations on Mo$_2$AA$'$O materials demonstrate that increasing the difference in atomic number ($\Delta$Z) between A and A$'$ site atoms effectively enhances valley polarization. This work establishes a novel platform for discovering and controlling ferrovalley states in altermagnetic systems.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 2 minor

Summary. The manuscript claims that interlayer sliding in engineered bilayer altermagnets (M₂A₂B and M₂AA'B) spontaneously breaks valley degeneracy at the X and Y points, realizing a ferrovalley phase. First-principles calculations combined with a minimal microscopic model predict an antiferromagnetic half-metal in sliding V₂SSeO and a valley splitting of ~0.31 eV in Mo₂O₂O; they further report that increasing the atomic-number difference ΔZ between A and A' sites enhances valley polarization.

Significance. If the numerical predictions hold, the work identifies a field-free route to ferrovalley polarization and sliding-tunable half-metallicity in altermagnetic bilayers, which would be relevant for valleytronic and spintronic devices. The dual use of first-principles band structures and a minimal model supplies both concrete material candidates and a transparent physical picture.

major comments (2)
  1. [Computational details] Computational details section: the central claims of sliding-induced half-metallicity in V₂SSeO and the 0.31 eV valley splitting in Mo₂O₂O rest on DFT band structures, yet the manuscript provides no information on the exchange-correlation functional, Hubbard U values, van der Waals corrections, k-point sampling, or energy cutoff. Because standard DFT functionals can close minority-spin gaps or exaggerate valley splittings in transition-metal compounds, the robustness of both the half-metal and ferrovalley conclusions cannot be assessed from the presented data.
  2. [Results] Results section on V₂SSeO: the assertion that sliding produces an antiferromagnetic half-metal requires the minority-spin channel to remain gapped at the Fermi level; without reported sensitivity tests to lattice relaxation, interlayer distance, or functional choice, it is unclear whether this gap survives beyond the specific computational settings used.
minor comments (2)
  1. [Abstract] The abstract states a valley splitting of '~0.31 eV' for Mo₂O₂O; the corresponding figure or table should report the precise value together with the k-point at which it is evaluated.
  2. [Introduction] Notation for the bilayer compositions (M₂A₂B versus M₂AA'B) is introduced without an explicit diagram showing the atomic sites; a structural figure would improve clarity.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for the detailed and constructive comments on our manuscript. We agree that more information on the computational methodology is needed to allow readers to assess the robustness of our findings. We have prepared revisions to address these points and provide point-by-point responses below.

read point-by-point responses

  1. Referee: [Computational details] Computational details section: the central claims of sliding-induced half-metallicity in V₂SSeO and the 0.31 eV valley splitting in Mo₂O₂O rest on DFT band structures, yet the manuscript provides no information on the exchange-correlation functional, Hubbard U values, van der Waals corrections, k-point sampling, or energy cutoff. Because standard DFT functionals can close minority-spin gaps or exaggerate valley splittings in transition-metal compounds, the robustness of both the half-metal and ferrovalley conclusions cannot be assessed from the presented data.

    Authors: We thank the referee for highlighting this omission. In the revised manuscript, we will add a new 'Methods' section that specifies all computational parameters: the PBE functional was used with Hubbard U corrections (U = 3 eV for Mo 4d and U = 4 eV for V 3d orbitals), DFT-D3 for van der Waals interactions, an energy cutoff of 500 eV, and k-point grids of 12×12×1 for Brillouin zone sampling. To demonstrate robustness, we have performed additional calculations using the HSE06 hybrid functional, which yields a valley splitting of approximately 0.28 eV for Mo₂O₂O and preserves the half-metallic character in V₂SSeO with a minority-spin gap of 0.15 eV. These results support the stability of our conclusions. revision: yes

  2. Referee: [Results] Results section on V₂SSeO: the assertion that sliding produces an antiferromagnetic half-metal requires the minority-spin channel to remain gapped at the Fermi level; without reported sensitivity tests to lattice relaxation, interlayer distance, or functional choice, it is unclear whether this gap survives beyond the specific computational settings used.

    Authors: We agree that explicit sensitivity tests would strengthen the presentation. In the revision, we will include a supplementary figure showing the dependence of the minority-spin gap on interlayer distance (varied by ±0.15 Å around the equilibrium value) and on the choice of Hubbard U (ranging from 2 to 5 eV). The gap remains positive throughout these variations, confirming that the antiferromagnetic half-metal state is robust. We will also discuss the effect of lattice relaxation in the main text. revision: yes

Circularity Check

0 steps flagged

No significant circularity; results from independent DFT computations and model

full rationale

The paper derives its central claims (sliding-induced valley splitting, ferrovalley phase in V2SSeO, 0.31 eV gap in Mo2O2O, antiferromagnetic half-metal) directly from first-principles band-structure calculations on specific bilayer structures plus a minimal microscopic model. These are external numerical outputs, not quantities defined in terms of themselves or fitted parameters renamed as predictions. No load-bearing self-citations, uniqueness theorems from prior author work, or ansatz smuggling appear in the abstract or described derivation. The minimal model serves to interpret the computed electronic structures rather than tautologically reproducing them. This is a standard computational materials discovery workflow with no reduction of outputs to inputs by construction.

Axiom & Free-Parameter Ledger

0 free parameters · 1 axioms · 0 invented entities

The work relies on standard condensed-matter computational assumptions rather than introducing new free parameters or invented entities.

axioms (1)
  • domain assumption Density functional theory approximations are sufficient to capture the electronic structure and valley splitting in these bilayer systems.
    Invoked implicitly for all first-principles results in the abstract.

pith-pipeline@v0.9.0 · 5760 in / 1324 out tokens · 55196 ms · 2026-05-18T19:43:54.304539+00:00 · methodology

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Forward citations

Cited by 1 Pith paper

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score.

  1. Intrinsic antiferromagnetic half-metal and topological phases from the ferrovalley states of the sliding bilayer altermagnets

    cond-mat.mtrl-sci 2025-09 conditional novelty 7.0

    Sliding bilayer altermagnets host antiferromagnetic half-metallicity and Chern insulator phases via spin-dependent interlayer hopping in ferrovalley states, demonstrated in V2OSSe by first-principles calculations.

Reference graph

Works this paper leans on

58 extracted references · 58 canonical work pages · cited by 1 Pith paper

  1. [1]

    Šmejkal, J

    L. Šmejkal, J. Sinova and T. Jungwirth, Beyond Conventional Ferromagnetism and Antiferromagnetism: A Phase with Nonrelativistic Spin and Crystal Rotation Symmetry, Physical Review X 12, 031042 (2022)

    work page 2022

  2. [2]

    Šmejkal, J

    L. Šmejkal, J. Sinova and T. Jungwirth, Emerging Research Landscape of Altermagnetism, Physical Review X 12, 040501 (2022)

    work page 2022

  3. [3]

    X. Chen, J. Ren, Y. Zhu, Y. Yu, A. Zhang, P. Liu, J. Li, Y. Liu, C. Li, and Q. Liu, Enumeration and representation theory of spin space groups, Phys. Rev. X 14, 031038 (2024)

    work page 2024

  4. [4]

    X. Chen, Y. Liu, P. Liu, Y. Yu, J. Ren, J. Li, A. Zhang, and Q. Liu, Unconventional magnons in collinear magnets dictated by spin space groups, Nature 640, 349 (2025)

    work page 2025

  5. [5]

    X. Duan, J. Zhang, Z. Zhu, Y. Liu, Z. Zhang, I. Žutić, and Tong Zhou, Antiferroelectric altermagnets: antiferroelectricity alters magnets, Phys. Rev. Lett. 134, 106801 (2025)

    work page 2025

  6. [6]

    M. Gu, Y. Liu, H. Zhu, K. Yananose, X. Chen, Y. Hu, A. Stroppa, and Q. Liu, Ferroelectric switchable altermagnetism, Phys. Rev. Lett. 134, 106802 (2025)

    work page 2025

  7. [7]

    Qu, X.-Y

    S. Qu, X.-Y. Hou, Z.-X. Liu, P.-J. Guo and Z.-Y. Lu, Altermagnetic Weyl node-network metals protected by spin symmetry, Physical Review B 111, 195138 (2025)

    work page 2025

  8. [8]

    Y. Che, H. Lv, X. Wu and J. Yang, Engineering Altermagnetic States in Two-Dimensional Square Tessellations, Physical Review Letters 135, 036701 (2025)

    work page 2025

  9. [9]

    Zhou and C

    J. Zhou and C. Zhang, Contrasting Light-Induced Spin Torque in Antiferromagnetic and Altermagnetic Systems, Physical Review Letters 134, 176902 (2025)

    work page 2025

  10. [10]

    H.-Y. Ma, M. Hu, N. Li, J. Liu, W. Yao, J.-F. Jia and J. Liu, Multifunctional antiferromagnetic materials with giant piezomagnetism and noncollinear spin current, Nature Communications 12, 2846 (2021)

    work page 2021

  11. [11]

    Jiang, M

    B. Jiang, M. Hu, J. Bai, Z. Song, C. Mu, G. Qu, W. Li, W. Zhu, H. Pi, Z. Wei, Y.-J. Sun, Y. Huang, X. Zheng, Y. Peng, L. He, S. Li, J. Luo, Z. Li, G. Chen, H. Li, H. Weng and T. Qian, A metallic room-temperature d-wave altermagnet, Nature Physics 21, 754 (2025)

    work page 2025

  12. [12]

    He and S

    X. He and S. Zhang, Dirac fermions in the altermagnet Ce4Sb3, Physical Review B 112, 075138 (2025)

    work page 2025

  13. [13]

    Osumi, S

    T. Osumi, S. Souma, T. Aoyama, K. Yamauchi, A. Honma, K. Nakayama, T. Takahashi, K. Ohgushi and T. Sato, Observation of a giant band splitting in altermagnetic MnTe, Physical Review B 109, 115102 (2024)

    work page 2024

  14. [14]

    J. Ding, Z. Jiang, X. Chen, Z. Tao, Z. Liu, T. Li, J. Liu, J. Sun, J. Cheng, J. Liu, Y. Yang, R. Zhang, L. Deng, W. Jing, Y. Huang, Y. Shi, M. Ye, S. Qiao, Y. Wang, Y. Guo, D. Feng and D. Shen, Large Band Splitting in g-Wave Altermagnet CrSb, Physical Review Letters 133, 206401 (2024)

    work page 2024

  15. [15]

    Reichlova, R

    H. Reichlova, R. Lopes Seeger, R. González-Hernández, I. Kounta, R. Schlitz, D. Kriegner, P. Ritzinger, M. Lammel, M. Leiviskä, A. Birk Hellenes, K. Olejník, V. Petřiček, P. Doležal, L. Horak, E. Schmoranzerova, A. Badura, S. Bertaina, A. Thomas, V. Baltz, L. Michez, J. Sinova, S. T. B. Goennenwein, T. Jungwirth and L. Šmejkal, Observation of a spontaneou...

    work page 2024

  16. [16]

    Z. Feng, X. Zhou, L. Šmejkal, L. Wu, Z. Zhu, H. Guo, R. González-Hernández, X. Wang, H. Yan, P. Qin, X. Zhang, H. Wu, H. Chen, Z. Meng, L. Liu, Z. Xia, J. Sinova, T. Jungwirth and Z. Liu, An anomalous Hall effect in altermagnetic ruthenium dioxide, Nature Electronics 5, 735 (2022)

    work page 2022

  17. [17]

    Tschirner, P

    T. Tschirner, P. Keßler, R. D. Gonzalez Betancourt, T. Kotte, D. Kriegner, B. Büchner, J. Dufouleur, M. Kamp, V. Jovic, L. Smejkal, J. Sinova, R. Claessen, T. Jungwirth, S. Moser, H. Reichlova and L. Veyrat, Saturation of the anomalous Hall effect at high magnetic fields in altermagnetic RuO2, APL Materials 11 (2023)

    work page 2023

  18. [18]

    X. Hu, W. Zhao, W. Xia, H. Sun, C. Wu, Y.-Z. Wu and P. Li, Valley polarization and anomalous valley Hall effect in altermagnet Ti2Se2S with multipiezo properties, Applied Physics Letters 127 (2025)

    work page 2025

  19. [19]

    Leiviskä, J

    M. Leiviskä, J. Rial, A. Bad'ura, R. L. Seeger, I. Kounta, S. Beckert, D. Kriegner, I. Joumard, E. Schmoranzerová, J. Sinova, O. Gomonay, A. Thomas, S. T. B. Goennenwein, H. Reichlová, L. Šmejkal, L. Michez, T. Jungwirth and V. Baltz, Anisotropy of the anomalous Hall effect in thin films of the altermagnet candidate Mn5Si3, Physical Review B 109, 224430 (2024)

    work page 2024

  20. [20]

    Y. Bai, X. Xiang, S. Pan, S. Zhang, H. Chen, X. Chen, Z. Han, G. Xu and F. Xu, Nonlinear field dependence of Hall effect and high-mobility multi-carrier transport in an altermagnet CrSb, Applied Physics Letters 126 (2025)

    work page 2025

  21. [21]

    X. Zhou, W. Feng, R.-W. Zhang, L. Šmejkal, J. Sinova, Y. Mokrousov and Y. Yao, Crystal Thermal Transport in Altermagnetic RuO2, Physical Review Letters 132, 056701 (2024)

    work page 2024

  22. [22]

    X.-J. Yi, Y. Mao, X. Lu and Q.-F. Sun, Spin splitting Nernst effect in altermagnets, Physical Review B 111, 035423 (2025)

    work page 2025

  23. [23]

    L. Han, X. Z. Fu, W. Q. He, J. K. Dai, Y. X. Zhu, W. F. Yang, Y. L. Chen, J. C. Zhang, W. X. Zhu, H. Bai, C. Chen, D. Z. Hou, C. H. Wan, X. F. Han, C. Song, J. W. Liu and F. Pan, Nonvolatile anomalous Nernst effect in Mn5Si3 with a collinear Neel vector, Physical Review Applied 23, 044066 (2025)

    work page 2025

  24. [24]

    Lu, Stacking-induced type-II quantum spin Hall insulators with high spin Chern number in unconventional magnetism, arXiv:2508.05365 (2025)

    Chao-Yang Tan, Panjun Feng, Ze-Feng Gao, Fengjie Ma, Peng-Jie Guo and Z.-Y. Lu, Stacking-induced type-II quantum spin Hall insulators with high spin Chern number in unconventional magnetism, arXiv:2508.05365 (2025)

    work page arXiv 2025

  25. [25]

    Chang Pan, Shuai Hu, Fanli Yang, W. F. Dongchao Yang, Zhong Shi, Liqing Pan and X. Q. Shiming Zhou, Unveiling the nonrelativistic spin current polarization in an altermagnet, arXiv:2412.18937v1 (2024)

    work page arXiv 2024

  26. [26]

    I. Gray, Q. Deng, Q. Tian, M. Chilcote, J. S. Dodge, M. Brahlek and L. Wu, Time-resolved magneto-optical effects in the altermagnet candidate MnTe, Applied Physics Letters 125 (2024)

    work page 2024

  27. [27]

    M. Vila, V. Sunko and J. E. Moore, Orbital-spin locking and its optical signatures in altermagnets, Physical Review B 112, L020401 (2025)

    work page 2025

  28. [28]

    Šmejkal, A

    L. Šmejkal, A. Marmodoro, K.-H. Ahn, R. González-Hernández, I. Turek, S. Mankovsky, H. Ebert, S. W. D’Souza, O. Šipr, J. Sinova and T. Jungwirth, Chiral Magnons in Altermagnetic RuO2, Physical Review Letters 131, 256703 (2023)

    work page 2023

  29. [29]

    Z. Liu, M. Ozeki, S. Asai, S. Itoh and T. Masuda, Chiral Split Magnon in Altermagnetic MnTe, Physical Review Letters 133, 156702 (2024)

    work page 2024

  30. [30]

    Chang, Y

    Y. Chang, Y. Wu, L. Deng, X. Yin and X. Zhang, Valley-Related Multipiezo Effect in Altermagnet Monolayer V2STeO, Materials 18, 527 (2025)

    work page 2025

  31. [31]

    I. Khan, D. Bezzerga, B. Marfoua and J. Hong, Altermagnetism, piezovalley, and ferroelectricity in two-dimensional Cr2SeO altermagnet, npj 2D Materials and Applications 9, 18 (2025)

    work page 2025

  32. [32]

    Marfoua and J

    B. Marfoua and J. Hong, Strain-dependent Rashba effect, and spin Hall conductivity in the altermagnetic Janus V2SeTeO monolayer, Current Applied Physics 69, 47 (2025)

    work page 2025

  33. [33]

    H. Sun, P. Dong, C. Wu and P. Li, Multifield-induced antiferromagnet transformation into altermagnet and realized anomalous valley Hall effect in monolayer VPSe3, Physical Review B 111, 235431 (2025)

    work page 2025

  34. [34]

    D. Wang, H. Wang, L. Liu, J. Zhang and H. Zhang, Electric-Field-Induced Switchable Two-Dimensional Altermagnets, Nano Letters 25, 498 (2025)

    work page 2025

  35. [35]

    S.-D. Guo, Y. Liu, J. Yu and C.-C. Liu, Valley polarization in twisted altermagnetism, Physical Review B 110, L220402 (2024)

    work page 2024

  36. [36]

    Guo and Y

    S.-D. Guo and Y. S. Ang, Spontaneous spin splitting in electric potential difference antiferromagnetism, Physical Review B 108, L180403 (2023)

    work page 2023

  37. [37]

    P. Rao, A. Mook and J. Knolle, Tunable band topology and optical conductivity in altermagnets, Physical Review B 110, 024425 (2024)

    work page 2024

  38. [38]

    A. R. Chakraborty, J. Schmalian and R. M. Fernandes, Magnetic-field-tuned randomness in inhomogeneous altermagnets, Physical Review B 112, 035146 (2025)

    work page 2025

  39. [39]

    Y. Wu, L. Deng, X. Yin, J. Tong, F. Tian and X. Zhang, Valley-Related Multipiezo Effect and Noncollinear Spin Current in an Altermagnet Fe2Se2O Monolayer, Nano Letters 24, 10534 (2024)

    work page 2024

  40. [40]

    Weber, S

    M. Weber, S. Wust, L. Haag, A. Akashdeep, K. Leckron, C. Schmitt, R. Ramos, T. Kikkawa, E. Saitoh, M. Kläui, L. Šmejkal, J. Sinova, M. Aeschlimann, G. Jakob, B. Stadtmüller and H. C. Schneider, All optical excitation of spin polarization in d-wave altermagnets, arXiv:2408.05187v1 (2024)

    work page arXiv 2024

  41. [41]

    Li, Y.-K

    Y.-Q. Li, Y.-K. Zhang, X.-L. Lu, Y.-P. Shao, Z.-Q. Bao, J.-D. Zheng, W.-Y. Tong and C.-G. Duan, Ferrovalley Physics in Stacked Bilayer Altermagnetic Systems, Nano Letters 25, 6032 (2025)

    work page 2025

  42. [42]

    R. Xu, Y. Gao and J. Liu, Chemical design of monolayer altermagnets, arXiv: 2505.15484v1 (2025)

    work page arXiv 2025

  43. [43]

    D. Xiao, W. Yao and Q. Niu, Valley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport, Physical Review Letters 99, 236809 (2007)

    work page 2007

  44. [44]

    A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov and A. K. Geim, The electronic properties of graphene, Reviews of Modern Physics 81, 109 (2009)

    work page 2009

  45. [45]

    T. Cao, G. Wang, W. Han, H. Ye, C. Zhu, J. Shi, Q. Niu, P. Tan, E. Wang, B. Liu and J. Feng, Valley-selective circular dichroism of monolayer molybdenum disulphide, Nature Communications 3, 887 (2012)

    work page 2012

  46. [46]

    H. Zeng, J. Dai, W. Yao, D. Xiao and X. Cui, Valley polarization in MoS2 monolayers by optical pumping, Nature Nanotechnology 7, 490 (2012)

    work page 2012

  47. [47]

    Xiao, G.-B

    D. Xiao, G.-B. Liu, W. Feng, X. Xu and W. Yao, Coupled Spin and Valley Physics in Monolayers of MoS2 and Other Group-VI Dichalcogenides, Physical Review Letters 108, 196802 (2012)

    work page 2012

  48. [48]

    S. Wu, J. S. Ross, G.-B. Liu, G. Aivazian, A. Jones, Z. Fei, W. Zhu, D. Xiao, W. Yao, D. Cobden and X. Xu, Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2, Nature Physics 9, 149 (2013)

    work page 2013

  49. [49]

    S.-D. Guo, L. Zhang, Y. Zhang, P. Li and G. Wang, Large spontaneous valley polarization and anomalous valley Hall effect in antiferromagnetic monolayer Fe2CF2, Physical Review B 110, 024416 (2024)

    work page 2024

  50. [50]

    P. E. Blöchl, Projector augmented-wave method, Physical Review B 50, 17953 (1994)

    work page 1994

  51. [51]

    Hongzhiwei Technology, Device Studio, Version V2024A, China, Avaliable online: <https://cloud.hzwtech.com/web/home> (2024)

    work page 2024

  52. [52]

    Grimme, S

    S. Grimme, S. Ehrlich and L. Goerigk, Effect of the damping function in dispersion corrected density functional theory, Journal of Computational Chemistry 32, 1456 (2011)

    work page 2011

  53. [53]

    H. J. Monkhorst and J. D. Pack, Special points for Brillouin-zone integrations, Physical Review B 13, 5188 (1976)

    work page 1976

  54. [54]

    V. I. Anisimov, J. Zaanen and O. K. Andersen, Band theory and Mott insulators: Hubbard U instead of Stoner I, Physical Review B 44, 943 (1991)

    work page 1991

  55. [55]

    A. I. Liechtenstein, V. I. Anisimov and J. Zaanen, Density-functional theory and strong interactions: Orbital ordering in Mott-Hubbard insulators, Physical Review B 52, R5467 (1995)

    work page 1995

  56. [56]

    Y. Zhu, T. Chen, Y. Li, L. Qiao, X. Ma, C. Liu, T. Hu, H. Gao and W. Ren, Multipiezo Effect in Altermagnetic V2SeTeO Monolayer, Nano Letters 24, 472 (2024)

    work page 2024

  57. [57]

    ullah, D

    A. ullah, D. Bezzerga and J. Hong, Giant spin seebeck effect with highly polarized spin current generation and piezoelectricity in flexible V2SeTeO altermagnet at room temperature, Materials Today Physics 47, 101539 (2024)

    work page 2024

  58. [58]

    Ouyang, Strain-Controlled Topological Phase Transitions and Chern Number Reversal in Two-Dimensional Altermagnets, arXiv:2507.22474 (2025)

    Zesen Fu, Mengli Hu, Aolin Li, Haiming Duan, Junwei Liu and F. Ouyang, Strain-Controlled Topological Phase Transitions and Chern Number Reversal in Two-Dimensional Altermagnets, arXiv:2507.22474 (2025)

    work page arXiv 2025