Single-crystalline Al(111) epitaxially grown on Ge(111) by MBE forms an atomically sharp commensurate 7-Al/5-Ge interface reducing mismatch to 0.1%, yielding 2 nm continuous films with 0.16 nm RMS roughness.
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Demonstrated gate-tunable supercurrents in Josephson junctions on Ge quantum wells with Ic >100 nA and IcRn=8.63 μV using in-situ Al contacts and deep mesa etch for low-loss integration.
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Single-Crystalline Al/Ge Heterostructure with an Atomically Sharp Commensurate Interface
Single-crystalline Al(111) epitaxially grown on Ge(111) by MBE forms an atomically sharp commensurate 7-Al/5-Ge interface reducing mismatch to 0.1%, yielding 2 nm continuous films with 0.16 nm RMS roughness.