Monolithic Si3N4 platform achieves EPR fidelity 0.9875(3), HOM visibility 0.990(6), and four-photon GHZ fidelity 0.943(8) at 27 Hz—more than 100x prior silicon-photonic rates—using CMOS-compatible 150 mm wafer fabrication.
Integrated photonic source of Gottesman–Kitaev–Preskill qubits
4 Pith papers cite this work. Polarity classification is still indexing.
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Hybrid pulsed-CW architecture for optical quantum computation with experimental proof-of-principle of ultrafast homodyne detection on pulsed single-photon states yielding W(0,0) = -0.153.
Introduces non-Gaussian control parameters (s0, δ0) and an optimization method that reduces photon detections by a factor of three and increases preparation probability by nearly 10^8 for GKP states, with gains shown across cat, cubic phase, and random states.
Microscopic phase contributions from crystal edges produce large threshold variations in nominally identical linear OPOs, traced via SHG and threshold measurements on three devices.
citing papers explorer
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An ultralow-loss integrated photonic platform for discrete-variable quantum information processing
Monolithic Si3N4 platform achieves EPR fidelity 0.9875(3), HOM visibility 0.990(6), and four-photon GHZ fidelity 0.943(8) at 27 Hz—more than 100x prior silicon-photonic rates—using CMOS-compatible 150 mm wafer fabrication.
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Hybridization of pulse and continuous-wave based optical quantum computation
Hybrid pulsed-CW architecture for optical quantum computation with experimental proof-of-principle of ultrafast homodyne detection on pulsed single-photon states yielding W(0,0) = -0.153.
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Beyond Stellar Rank: Control Parameters for Scalable Optical Non-Gaussian State Generation
Introduces non-Gaussian control parameters (s0, δ0) and an optimization method that reduces photon detections by a factor of three and increases preparation probability by nearly 10^8 for GKP states, with gains shown across cat, cubic phase, and random states.
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Phase-Sensitive Crystal-Edge Effects in Linear Optical Parametric Oscillators: Why Nominally Identical Squeezers Behave Differently
Microscopic phase contributions from crystal edges produce large threshold variations in nominally identical linear OPOs, traced via SHG and threshold measurements on three devices.