An undoped Si/SiGe HFET achieves optically programmable non-volatile memory with >10^3 cycle endurance and >10^4 s retention at 1.5 K by locking threshold voltage via high interface trap density.
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3 Pith papers cite this work. Polarity classification is still indexing.
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Pith papers citing it
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2026 3verdicts
UNVERDICTED 3representative citing papers
A two-stage PINN optimizes pulse sequences for silicon exchange-only spin qubits to achieve over 99% noise-averaged fidelity while shortening pulse durations by 20-40%.
Raising the atomic-layer deposition temperature of Al2O3 and using HfO2 or poly-Si gates in SiMOS devices correlates with higher mobility and lower charge noise, yielding more stable quantum dots.
citing papers explorer
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Optically programmable and erasable cryogenic flash memory on an undoped Si/SiGe heterostructure
An undoped Si/SiGe HFET achieves optically programmable non-volatile memory with >10^3 cycle endurance and >10^4 s retention at 1.5 K by locking threshold voltage via high interface trap density.
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Exchange-Only Silicon Based Spin Qubits: Charge Noise, PINN Optimised Pulse Sequences,and Gate-Level Fidelity
A two-stage PINN optimizes pulse sequences for silicon exchange-only spin qubits to achieve over 99% noise-averaged fidelity while shortening pulse durations by 20-40%.
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Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices
Raising the atomic-layer deposition temperature of Al2O3 and using HfO2 or poly-Si gates in SiMOS devices correlates with higher mobility and lower charge noise, yielding more stable quantum dots.