MBE-grown alpha-MnTe films on GaAs(111)B exhibit Raman modes at 121 and 140 cm-1 identified as all symmetry-allowed optical phonons of the hexagonal NiAs lattice via experiment and DFT calculations.
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Polar distortions induced by surface symmetry breaking or electric fields substantially modify the anomalous Hall conductivity in alpha-MnTe.
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Observation of the Optical Phonons in {\alpha}-MnTe films
MBE-grown alpha-MnTe films on GaAs(111)B exhibit Raman modes at 121 and 140 cm-1 identified as all symmetry-allowed optical phonons of the hexagonal NiAs lattice via experiment and DFT calculations.