Hole spin qubits can sense the geometry of electrostatic disorder from two-level fluctuators via g-tensor anisotropy, using a Berry-phase protocol estimated to achieve order-unity SNR in tens of microseconds, with optimal regimes identified by quantum Fisher information.
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A design study outlines how detector-grade Ge with ~2e14 cm^-3 In acceptors could enable a statistically selected five-qubit register with all-electrical control and manageable disorder.
Oxygen plasma treatment on Ge heterostructures reduces interface trap density from the Si cap, improving mobility and lowering percolation density in 2DHGs compared with HF etching.
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Probing Electrostatic Disorder via g-Tensor Geometry
Hole spin qubits can sense the geometry of electrostatic disorder from two-level fluctuators via g-tensor anisotropy, using a Berry-phase protocol estimated to achieve order-unity SNR in tens of microseconds, with optimal regimes identified by quantum Fisher information.
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Impact of surface treatments on the transport properties of germanium 2DHGs
Oxygen plasma treatment on Ge heterostructures reduces interface trap density from the Si cap, improving mobility and lowering percolation density in 2DHGs compared with HF etching.