pith. machine review for the scientific record.
sign in

arxiv: 0704.3487 · v2 · submitted 2007-04-26 · ❄️ cond-mat.mes-hall · cond-mat.mtrl-sci

Quantum Hall Effect in a Graphene p-n Junction

J. R. Williams , L. DiCarlo , C. M. Marcus This is my paper
classification ❄️ cond-mat.mes-hall cond-mat.mtrl-sci
keywords graphenejunctionquantumconductancegatehallacrossadheres
0
0 comments X
read the original abstract

We report on the fabrication and transport studies of a single-layer graphene p-n junction. Carrier type and density in two adjacent regions are individually controlled by electrostatic gating using a local top gate and a global back gate. A functionalized Al203 oxide that adheres to graphene and does not significantly affect its electronic properties is described. Measurements in the quantum Hall regime reveal new plateaus of two-terminal conductance across the junction at 1 and 3/2 times the quantum of conductance, e2/h, consistent with theory.

This paper has not been read by Pith yet.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Forward citations

Cited by 1 Pith paper

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score.

  1. Mesoscopic transport in a Chern mosaic

    cond-mat.mes-hall 2026-04 unverdicted novelty 7.0

    Simple domain-wall networks in Chern mosaics produce zero, integer, or fractional multiples of the resistance quantum in both longitudinal and Hall channels.