pith. sign in

arxiv: 1907.07715 · v1 · pith:FMMFYPKKnew · submitted 2019-07-15 · ⚛️ physics.app-ph · physics.optics

Design and characteristic study of electron blocking layer free AlInN nanowire deep ultraviolet light-emitting diodes

Ravi Teja Velpula , Barsha Jain , Thang Ha Quoc Bui , Tan Thi Pham , Van Thang Le , Hoang-Duy Nguyen , Trupti Ranjan Lenka , Hieu Pham Trung Nguyen This is my paper

Pith reviewed 2026-05-24 20:55 UTC · model grok-4.3

classification ⚛️ physics.app-ph physics.optics
keywords AlInN nanowiredeep ultraviolet LEDelectron blocking layer freeinternal quantum efficiencyefficiency droopTM polarizationAPSYS simulationAlGaN comparison
0
0 comments X

The pith

AlInN nanowire DUV LEDs without electron blocking layer maintain high internal quantum efficiency with no droop up to 1500 A/cm2 and strong TM emission.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper uses APSYS simulations to compare electron blocking layer free AlInN nanowire LEDs with AlGaN nanowire devices at similar deep UV wavelengths. It establishes that single quantum well AlInN structures deliver higher internal quantum efficiency without efficiency droop and higher output power. The work also reports that transverse magnetic polarized emission is approximately five orders of magnitude stronger than transverse electric emission at 238 nm. Multiple quantum wells in the active region reduce performance because of non-uniform carrier distribution. These results point to AlInN nanowires as an alternative to AlGaN for deep UV light emitters.

Core claim

The proposed single quantum well AlInN based light-emitters offer higher internal quantum efficiency without droop up to current density of 1500 A/cm2 and high output optical power. Transverse magnetic polarized emission is ~5 orders stronger than transverse electric polarized emission at 238 nm wavelength. The performance of the AlInN DUV nanowire LEDs decreases with multiple QWs in the active region due to the presence of the non-uniform carrier distribution in the active region.

What carries the argument

Electron blocking layer free single quantum well AlInN nanowire active region simulated via APSYS and compared to AlGaN nanowire structures at equivalent emission wavelengths.

If this is right

  • AlGaN nanowire DUV LEDs show significant efficiency droop attributed to electron leakage.
  • AlInN single quantum well devices maintain high internal quantum efficiency and output power without droop to 1500 A/cm2.
  • Transverse magnetic polarized emission dominates by five orders of magnitude over transverse electric at 238 nm.
  • Adding multiple quantum wells lowers performance through non-uniform carrier distribution in the active region.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

  • Omitting the electron blocking layer may simplify epitaxial growth sequences for these nanowire devices.
  • The strong TM polarization preference could be exploited in applications that require polarized deep UV output.
  • Nanowire geometry combined with the AlInN composition appears to be the main factor controlling leakage rather than added barrier layers.
  • The observed degradation with extra quantum wells suggests that carrier injection uniformity sets a practical limit on active region design.

Load-bearing premise

The APSYS simulation model accurately captures electron leakage, carrier distribution, and recombination physics in AlInN and AlGaN nanowire structures.

What would settle it

Fabrication of AlInN nanowire LEDs followed by direct measurement of internal quantum efficiency versus current density up to 1500 A/cm2 that either matches the simulated absence of droop or shows clear droop would confirm or refute the central claim.

read the original abstract

We report on the illustration of the first electron blocking layer (EBL) free AlInN nanowire light-emitting diodes (LEDs) operating in the deep ultraviolet (DUV) wavelength region (sub-250 nm). We have systematically analyzed the results using APSYS software and compared with simulated AlGaN nanowire DUV LEDs. From the simulation results, significant efficiency droop was observed in AlGaN based devices, attributed to the significant electron leakage. However, compared to AlGaN nanowire DUV LEDs at similar emission wavelength, the proposed single quantum well (SQW) AlInN based light-emitters offer higher internal quantum efficiency without droop up to current density of 1500 A/cm2 and high output optical power. Moreover, we find that transverse magnetic polarized emission is ~ 5 orders stronger than transverse electric polarized emission at 238 nm wavelength. Further research shows that the performance of the AlInN DUV nanowire LEDs decreases with multiple QWs in the active region due to the presence of the non-uniform carrier distribution in the active region. This study provides important insights on the design of new type of high performance AlInN nanowire DUV LEDs, by replacing currently used AlGaN semiconductors.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Referee Report

2 major / 2 minor

Summary. The manuscript presents a simulation study using APSYS of single-quantum-well AlInN nanowire DUV LEDs operating below 250 nm without an electron blocking layer. It claims these devices exhibit higher internal quantum efficiency, no efficiency droop up to 1500 A/cm², higher output power, and TM-polarized emission ~5 orders of magnitude stronger than TE at 238 nm, outperforming comparable AlGaN nanowire LEDs; multiple QWs are reported to degrade performance due to non-uniform carrier distribution.

Significance. If the simulation results hold under disclosed and validated parameters, the work would offer design insights into EBL-free AlInN nanowire structures as an alternative to AlGaN for sub-250 nm emitters, potentially addressing electron leakage and polarization issues in DUV LEDs. The simulation-only nature and lack of experimental calibration limit immediate applicability, but the comparative analysis could guide further material exploration if parameters are made transparent.

major comments (2)
  1. [Abstract] Abstract and simulation results section: All headline quantitative claims (IQE values, absence of droop to 1500 A/cm², output power, and TM/TE polarization ratio of ~10^5) are direct outputs of a single APSYS drift-diffusion + 6-band k·p run; no AlInN material parameters (spontaneous/piezoelectric polarization charges, conduction-band offsets, Auger coefficients, or nanowire-specific surface/strain terms) are disclosed, so the reported superiority over AlGaN and the extreme polarization anisotropy cannot be independently assessed or reproduced.
  2. [Results] Comparison with AlGaN reference (results section): The claim that AlInN devices show no droop while AlGaN exhibits significant electron leakage is tied entirely to the same uncalibrated APSYS model; without sensitivity analysis or explicit listing of the shared vs. differing parameters between the two material systems, the performance difference is not load-bearing evidence but a model-internal outcome.
minor comments (2)
  1. [Methods] The manuscript should include a dedicated table or subsection listing all key APSYS input parameters (band gaps, effective masses, polarization constants, recombination coefficients) used for both AlInN and AlGaN structures to enable reproducibility.
  2. Figure captions and text should clarify the exact nanowire geometry (diameter, height, doping profiles) and mesh settings employed in the simulations, as these affect radial carrier distributions.

Simulated Author's Rebuttal

2 responses · 0 unresolved

We thank the referee for the constructive feedback. We agree that the lack of explicit material parameter disclosure in the original manuscript prevents independent assessment and reproducibility of the simulation results. We will revise the manuscript to provide full transparency on the parameters used for both AlInN and AlGaN systems, along with supporting analysis for the comparative claims.

read point-by-point responses

  1. Referee: [Abstract] Abstract and simulation results section: All headline quantitative claims (IQE values, absence of droop to 1500 A/cm², output power, and TM/TE polarization ratio of ~10^5) are direct outputs of a single APSYS drift-diffusion + 6-band k·p run; no AlInN material parameters (spontaneous/piezoelectric polarization charges, conduction-band offsets, Auger coefficients, or nanowire-specific surface/strain terms) are disclosed, so the reported superiority over AlGaN and the extreme polarization anisotropy cannot be independently assessed or reproduced.

    Authors: We acknowledge that the specific numerical values for the AlInN (and AlGaN) material parameters employed in the APSYS simulations were not listed in the manuscript. This is a valid concern that limits reproducibility. In the revised version we will insert a new subsection under Methods that tabulates all relevant parameters, including spontaneous and piezoelectric polarization charges, conduction- and valence-band offsets, Auger coefficients, radiative and non-radiative recombination rates, and nanowire-specific surface-recombination and strain-relaxation terms. Each entry will be accompanied by its literature source. This addition will allow readers to reproduce the reported IQE, droop behavior, output power, and polarization anisotropy values. revision: yes

  2. Referee: [Results] Comparison with AlGaN reference (results section): The claim that AlInN devices show no droop while AlGaN exhibits significant electron leakage is tied entirely to the same uncalibrated APSYS model; without sensitivity analysis or explicit listing of the shared vs. differing parameters between the two material systems, the performance difference is not load-bearing evidence but a model-internal outcome.

    Authors: We agree that the comparative claims require stronger documentation. In the revised manuscript we will add (i) an explicit table that separates parameters common to both material systems (nanowire diameter, doping profiles, QW thickness, etc.) from those that differ (band gaps, polarization charges, effective masses, Auger coefficients), and (ii) a short sensitivity study in which the most influential parameters (polarization charges and Auger coefficients) are varied by ±10 % around the nominal values. The resulting IQE and droop curves will be shown to confirm that the performance advantage of the AlInN structure remains qualitatively intact. These additions will make the model-internal nature of the comparison transparent while demonstrating its robustness. revision: yes

Circularity Check

0 steps flagged

No circularity: results are direct simulation outputs with no reduction to fitted inputs or self-citations shown

full rationale

The paper presents numerical simulation results obtained from the APSYS software package for AlInN and AlGaN nanowire LED structures. All headline claims (IQE values, droop behavior up to 1500 A/cm², TM/TE polarization ratio) are stated as direct outputs of these simulations. The provided text contains no equations, parameter-fitting steps, or self-citations that would make any result equivalent to its inputs by construction. No self-definitional loops, fitted-input predictions, or load-bearing self-citations are exhibited. The derivation chain is therefore the simulation run itself and remains self-contained as a modeling study.

Axiom & Free-Parameter Ledger

1 free parameters · 1 axioms · 0 invented entities

The central claim rests entirely on the validity of the APSYS device model and its input parameters for AlInN and AlGaN nanowires; these are not disclosed or validated experimentally in the abstract.

free parameters (1)
  • AlInN and AlGaN material parameters
    Typical simulation inputs such as band offsets, mobilities, and recombination coefficients that determine leakage and IQE are required by the model but not listed.
axioms (1)
  • domain assumption APSYS software correctly models carrier transport and optical properties in nanowire DUV LEDs
    All performance comparisons and claims depend on this unverified modeling assumption.

pith-pipeline@v0.9.0 · 5791 in / 1374 out tokens · 32944 ms · 2026-05-24T20:55:00.633341+00:00 · methodology

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.

Lean theorems connected to this paper

Citations machine-checked in the Pith Canon. Every link opens the source theorem in the public Lean library.

What do these tags mean?
matches
The paper's claim is directly supported by a theorem in the formal canon.
supports
The theorem supports part of the paper's argument, but the paper may add assumptions or extra steps.
extends
The paper goes beyond the formal theorem; the theorem is a base layer rather than the whole result.
uses
The paper appears to rely on the theorem as machinery.
contradicts
The paper's claim conflicts with a theorem or certificate in the canon.
unclear
Pith found a possible connection, but the passage is too broad, indirect, or ambiguous to say the theorem truly supports the claim.

Reference graph

Works this paper leans on

46 extracted references · 46 canonical work pages

  1. [1]

    Final LDRD report: ultr aviolet water purification systems for rural environments and mobile applications,

    M. A. Banas, M. H. Crawford, D. S. Ruby, M. P. Ross, J. S. Nelson, A. A. Allerman and R. Boucher, "Final LDRD report: ultr aviolet water purification systems for rural environments and mobile applications," Sandia National Laboratories, United States, (2005)

    work page 2005

  2. [2]

    Application of GaN-based ultraviolet-C light emitting diodes–UV LEDs–for water disinfection,

    M. Würtele, T. Kolbe, M. Lipsz, A. Kü lberg, M. Weyers, M. Kneissl and M. Jekel, "Application of GaN-based ultraviolet-C light emitting diodes–UV LEDs–for water disinfection," Water Res., 45(3), 1481-1489, (2011)

    work page 2011

  3. [3]

    G as Sensing of Nitr ogen Oxide Utilizing Spectrally Pure Deep UV LEDs,

    F. Mehnke, M. Guttmann, J. Enslin, C. Kuhn, C. Reich, J. Jordan, S. Kapanke, A. Knauer, M. Lapeyrade, U. Zeimer, H. Krüger, M. Rabe, S. Einfeldt, T. Wernicke, H. Ewald, M. Weyers and M. Kneissl,, "G as Sensing of Nitr ogen Oxide Utilizing Spectrally Pure Deep UV LEDs," IEEE J. Sel. Top. Quantum Electron., 23(2), 29-36, (2017)

    work page 2017

  4. [4]

    Laser (and LED) Therapy is Phototherapy,

    P. K. C. Smith, "Laser (and LED) Therapy is Phototherapy," Photomed Laser Surg, 23(1), 78-80, (2005)

    work page 2005

  5. [5]

    Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures,

    J. Simon, V. Protasenko, C. Lian, H. Xing, and D. Jena, "Polarization-induced hole doping in wide–band-gap uniaxial semiconductor heterostructures," Sci., 327(5961), 60-64, (2010)

    work page 2010

  6. [6]

    Unique optical properties of AlGaN alloys and related ultraviolet emitters,

    K. Nam, J. Li, M. Nakarmi, J. Lin, and H. Jiang, "Unique optical properties of AlGaN alloys and related ultraviolet emitters," Appl. Phys. Lett., 84(25), 5264-5266, (2004)

    work page 2004

  7. [7]

    Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,

    J. Northrup, C. Chua, Z. Yang, T. Wund erer, M. Kneissl, N. Johnson and T. Kolbe, "Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells," Appl. Phys. Lett., 100(2), 021101, (2012)

    work page 2012

  8. [8]

    Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light- emitting diodes,

    C. Liu, Y. K. Ooi, S. Islam, J. Verma, H. Xing, D. Jena and J. Zhang, "Physics and polarization characteristics of 298 nm AlN-delta-GaN quantum well ultraviolet light- emitting diodes," Appl. Phys. Lett., 110(7), 071103, (2017)

    work page 2017

  9. [9]

    226 nm AlGaN/Al N UV LEDs using p-type Si for hole injection and UV reflection,

    D. Liu, S. J. Cho, J. Park, J. Gong, J.-H. Seo, R. Dalmau, D. Zhao, K. Kim, M. Kim and A. R. Kalapala, "226 nm AlGaN/Al N UV LEDs using p-type Si for hole injection and UV reflection," Appl. Phys. Lett., 113(1), 011111, (2018)

    work page 2018

  10. [10]

    229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection,

    D. Liu, S. J. Cho, J. Park, J.-H. Seo, R. Dalmau, D. Zhao, K. Kim, J. Gong, M. Kim and I.-K. Lee, "229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection," Appl. Phys. Lett., 112(8), 081101, (2018)

    work page 2018

  11. [11]

    Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm,

    S. Zhao, S. Sadaf, S. Vanka, Y. Wang , R. Rashid, and Z. Mi, "Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm," Appl. Phys. Lett., 109(20), 201106, (2016)

    work page 2016

  12. [12]

    Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs,

    Y. Zhang, S. Krishnamoorthy, F. Akyol, J. M. Johnson, A. A. Allerman, M. W. Moseley, A. M. Armstrong, J. Hwang and S. Rajan, "Reflective metal/semiconductor tunnel junctions for hole injection in AlGaN UV LEDs," Appl. Phys. Lett., 111(5), 051104, (2017)

    work page 2017

  13. [13]

    Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency,

    Y. Zhang, Z. Jam al-Eddine, F. Akyol, S. Bajaj, J. M. Johnson, G. Calderon, A. A. Allerman, M. W. Moseley, A. M. Armstr ong and J. Hwang, "Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency," Appl. Phys. Lett., 112(7), 071107, (2018)

    work page 2018

  14. [14]

    Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics,

    S. Zhao, S. Woo, S. Sadaf, Y. Wu, A. Pofelski, D. Laleyan, R. Rashid, Y. Wang, G. Botton and Z. Mi, "Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics," APL Mater., 4(8), 086115, (2016)

    work page 2016

  15. [15]

    Band-edge electro absorption in quantum well structures: The quantum- confined Stark effect,

    D. A. Miller, D. Chemla, T. Damen, A. Gossard, W. Wiegmann, T. Wood and C. Burrus, "Band-edge electro absorption in quantum well structures: The quantum- confined Stark effect," Phys. Rev. Lett., 53(22), 2173, (1984)

    work page 1984

  16. [16]

    Reduction of oscillator strength due to piezoelectric fields in G a N/A l x Ga 1 − x N quantum wells,

    J. S. Im, H. Kollmer, J. Off, A. Sohmer, F. Scholz, and A. Hangleiter, "Reduction of oscillator strength due to piezoelectric fields in G a N/A l x Ga 1 − x N quantum wells," Phys. Rev. B, 57(16), R9435, (1998)

    work page 1998

  17. [17]

    High efficiency ultraviolet emission from AlxGa1− xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy,

    Q. Wang, H. Nguyen, K. Cui, and Z. Mi, "High efficiency ultraviolet emission from AlxGa1− xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy," Appl. Phys. Lett., 101(4), 043115, (2012)

    work page 2012

  18. [18]

    Highly efficient, spectrally pure 340 nm ultraviolet emission from AlxGa1 − xN nanowire based light emitting diodes

    Q. Wang, A. Connie, H. Nguyen, M. Kibr ia, S. Zhao, S. Sharif, I. Shih and Z. Mi, "Highly efficient, spectrally pure 340 nm ultraviolet emission from AlxGa1 − xN nanowire based light emitting diodes" Nanotechnology, 24(34), 345201, (2013)

    work page 2013

  19. [19]

    Optical properties of nanopillar AlGaN/ GaN MQWs for ultraviolet light-emitting diodes,

    P. Dong, J. Yan, Y. Zhang, J. Wang, C. Geng, H. Zheng, X. Wei, Q. Yan and J. Li, "Optical properties of nanopillar AlGaN/ GaN MQWs for ultraviolet light-emitting diodes," Opt. Express, 22(102), A320-A327, (2014)

    work page 2014

  20. [20]

    Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum- barrier electron blocking layer,

    H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, "Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum- barrier electron blocking layer," Appl. Phys. Express, 3(3), 031002, (2010)

    work page 2010

  21. [21]

    Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes,

    S.-H. Han, D.-Y. Lee, S.-J. Lee, C.-Y. Cho, M.-K. Kwon, S. P. Lee, D. Y. Noh, D.-J. Kim, Y. C. Kim and S.-J. Park, "Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes," Appl. Phys. Lett., 94(23), 231123, (2009)

    work page 2009

  22. [22]

    Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,

    S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer and F. A. Ponce, "Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer," Appl. Phys. Lett., 96(22), 221105, (2010)

    work page 2010

  23. [23]

    Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,

    C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Ch ang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu and S. C. Wang, "Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer," Appl. Phys. Lett., 97(26), 261103, (2010)

    work page 2010

  24. [24]

    Performance Analysis of GaN-Based Light-Emitting Diodes With Lattice-Matc hed InGaN/AlInN/InGaN Quantum-Well Barriers,

    N. Wang, Y. A. Yin, B. Zhao, and T. Mei, "Performance Analysis of GaN-Based Light-Emitting Diodes With Lattice-Matc hed InGaN/AlInN/InGaN Quantum-Well Barriers," J. Disp. Technol., 11(12), 1056-1060, (2015)

    work page 2015

  25. [25]

    Effect of low hole mobility on the efficiency droop of AlGaN nanowire deep ultraviolet light emitting diodes,

    X. Hai, R. T. Rashid, S. M. Sadaf, Z. Mi, and S. Zhao, "Effect of low hole mobility on the efficiency droop of AlGaN nanowire deep ultraviolet light emitting diodes," Appl. Phys. Lett., 114(10), 101104, (2019)

    work page 2019

  26. [26]

    Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers,

    S. Choi, M.-H. Ji, J. Kim, H. Jin Kim, M. M. Satter, P. Yoder, J.-H. Ryou, R. D. Dupuis, A. M. Fischer and F. A. Ponce, "Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers," Appl. Phys. Lett., 101(16), 161110, (2012)

    work page 2012

  27. [27]

    Deep ultraviolet emitting polarization induced nanowire light emitting diodes with AlxGa1− xN active regions,

    T. F. Kent, S. D. Carnev ale, A. Sarwar, P. J. Phillips, R. F. Klie, and R. C. Myers, "Deep ultraviolet emitting polarization induced nanowire light emitting diodes with AlxGa1− xN active regions," Nanotechnology, 25(45), 455201, (2014)

    work page 2014

  28. [28]

    Surf ace emitting, high ef ficiency near-vacuum ultraviolet light source with aluminum nitride nanowires monolithically grown on silicon,

    S. Zhao, M. Djavid, and Z. Mi, "Surf ace emitting, high ef ficiency near-vacuum ultraviolet light source with aluminum nitride nanowires monolithically grown on silicon," Nano Lett., 15(10), 7006-7009, (2015)

    work page 2015

  29. [29]

    Ultrathin GaN quantum disk nanowire LEDs with sub-250 nm electroluminescence,

    A. G. Sarwar, B. J. May, M. F. Chisholm, G. J. Duscher, and R. C. Myers, "Ultrathin GaN quantum disk nanowire LEDs with sub-250 nm electroluminescence," Nanoscale, 8(15), 8024-8032, (2016)

    work page 2016

  30. [30]

    Effect of quantum well shape and width on deep ultraviolet emission in AlGaN nanowire LEDs,

    A. G. Sarwar, B. J. May, and R. C. Myers, "Effect of quantum well shape and width on deep ultraviolet emission in AlGaN nanowire LEDs," Phys. Status Solidi A, 213(4), 947-952, (2016)

    work page 2016

  31. [31]

    Large optical gain AlInN-delta-GaN quantum well for deep ultraviolet emitters,

    C.-K. Tan, W. Sun, D. Borovac, and N. Tansu, "Large optical gain AlInN-delta-GaN quantum well for deep ultraviolet emitters," Sci. Rep, 6, 22983, (2016)

    work page 2016

  32. [32]

    M-Plane GaN/InAlN multiple quantum wells in core–shell wire structure for UV emission,

    C. Durand, C. Bougerol, J.-F. Carlin, G. Rossbach, F. Godel, J. Eymery, P.-H. Jouneau, A. Mukhtarova, R. Butté and N. Grandjean, "M-Plane GaN/InAlN multiple quantum wells in core–shell wire structure for UV emission," ACS photonics, 1(1), 38-46, (2013)

    work page 2013

  33. [33]

    Exploring optimal UV emission windows for AlGaN and AlInN alloys grown on different templates,

    D. Fu, R. Zhang, B. Liu, Z. Xie, X. Xiu, H. Lu, Y. Zheng and G. Edwards, "Exploring optimal UV emission windows for AlGaN and AlInN alloys grown on different templates," Phys. Status Solidi B, 248(12), 2816-2820, (2011)

    work page 2011

  34. [34]

    Improved light output of nitride-based light- emitting diodes by lattice-matched AlInN cladding structure,

    A.-T. Cheng, Y.-K. Su, and W.-C. Lai, "Improved light output of nitride-based light- emitting diodes by lattice-matched AlInN cladding structure," IEEE Photonics Technol. Lett., 20(12), 970-972, (2008)

    work page 2008

  35. [35]

    AlInN for Vertical Power Electronic Devices,

    M. R. Peart, N. Tansu, and J. J. Wierer, "AlInN for Vertical Power Electronic Devices," IEEE Trans. Electron Devices, 99, 1-6, (2018)

    work page 2018

  36. [36]

    High Electron Mobility Lattice-matched AlInN/GaN Field- Effect Transistor Heterostructures,

    M. GONSCHREK, "High Electron Mobility Lattice-matched AlInN/GaN Field- Effect Transistor Heterostructures," Appl. Phys. Lett., 89, 062102, (2006)

    work page 2006

  37. [37]

    Power el ectronics on InAlN/(In) Ga N: Prospect for a record performance,

    J. Kuzmík, "Power el ectronics on InAlN/(In) Ga N: Prospect for a record performance," IEEE Electron Device Lett., 22(11), 510-512, (2001)

    work page 2001

  38. [38]

    Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers,

    M. M. Satter, H.-J. Kim, Z. Lochner, J. -H. Ryou, S.-C. Shen, R. D. Dupuis and P. D. Yoder, "Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers," IEEE J. Quantum Electron., 48(5), 703-711, (2012)

    work page 2012

  39. [39]

    Eff ects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance,

    Y.-K. Kuo and Y.-A. Chang, "Eff ects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance," IEEE J. Quantum Electron., 40(5), 437-444, (2004)

    work page 2004

  40. [40]

    Simulation of blue InGaN quantum-well lasers,

    J.-Y. Chang and Y.-K. Kuo, "Simulation of blue InGaN quantum-well lasers," J. Appl. Phys., 93(9), 4992-4998, (2003)

    work page 2003

  41. [41]

    Unique optical properties of AlGaN alloys and related ultraviolet emitters,

    K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, "Unique optical properties of AlGaN alloys and related ultraviolet emitters," Appl. Phys. Lett., 84(25), 5264-5266, (2004)

    work page 2004

  42. [42]

    An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting di odes: Preferential outcoupling of strong in-plane emission,

    J. W. Lee, D. Y. Kim, J. H. Park, E. F. Schubert, J. Kim, J. Lee, Y.-I. Kim, Y. Park and J. K. Kim, "An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting di odes: Preferential outcoupling of strong in-plane emission," Sci. Rep., 6, 22537, (2016)

    work page 2016

  43. [43]

    An AlGaN Core–Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band,

    S. M. Sadaf, S. Zhao, Y. Wu, Y. H. Ra, X. Liu, S. Vanka and Z. Mi, "An AlGaN Core–Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band," Nano Lett., 17(2), 1212-1218, (2017)

    work page 2017

  44. [44]

    Valence band en gineering for remarkab le enhancement of surface emission in AlGaN d eep-ultraviolet light emitti ng diodes,

    A. Atsushi Yamaguchi, "Valence band en gineering for remarkab le enhancement of surface emission in AlGaN d eep-ultraviolet light emitti ng diodes," Phys. Status Solidi C, 5(6), 2364-2366, (2008)

    work page 2008

  45. [45]

    Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells,

    N. Gao, K. Huang, J. Li, S. Li, X. Yang, and J. Kang, "Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells," Sci. Rep., 2, 816, (2012)

    work page 2012

  46. [46]

    Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,

    T. Fujii, Y. Gao, R. Sharma, E. Hu, S. DenBaars, and S. Nakamura, "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening," Appl. Phys. Lett., 84(6), 855-857, (2004)

    work page 2004