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Strong electron-phonon coupling and its influence on the transport and optical properties of hole-doped single-layer InSe

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arxiv 1907.08791 v2 pith:5RG4QOUZ submitted 2019-07-20 cond-mat.mtrl-sci cond-mat.mes-hallcond-mat.str-el

Strong electron-phonon coupling and its influence on the transport and optical properties of hole-doped single-layer InSe

classification cond-mat.mtrl-sci cond-mat.mes-hallcond-mat.str-el
keywords couplingcarrierchargeelectron-phononexcitationsfermiholeinse
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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We show that hole states in recently discovered single-layer InSe are strongly renormalized by the coupling with acoustic phonons. The coupling is enhanced significantly at moderate hole doping ($\sim$10$^{13}$ cm$^{-2}$) due to hexagonal warping of the Fermi surface. While the system remains dynamically stable, its electron-phonon spectral function exhibits sharp low-energy resonances, leading to the formation of satellite quasiparticle states near the Fermi energy. Such many-body renormalization is predicted to have two important consequences. First, it significantly suppresses charge carrier mobility reaching $\sim$1 cm$^2$V$^{-1}$s$^{-1}$ at $100$ K in a freestanding sample. Second, it gives rise to unusual temperature-dependent optical excitations in the midinfrared region. Relatively small charge carrier concentrations and realistic temperatures suggest that these excitations may be observed experimentally.

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