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MOVPE-grown Si-doped b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures

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arxiv 1909.04855 v1 pith:QNJRRF63 submitted 2019-09-11 cond-mat.mtrl-sci cond-mat.mes-hallphysics.app-ph

MOVPE-grown Si-doped b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures

Praneeth Ranga , Ashwin Rishinaramangalam , Joel Varley , Arkka Bhattacharyya , Daniel Feezell , Sriram Krishnamoorthy This is my paper
classification cond-mat.mtrl-sci cond-mat.mes-hallphysics.app-ph
keywords thindopingfilmscarrierconcentrationelectronga2o3heterostructure
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We report on n-type degenerate doping in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation doping in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure. Alloy composition is confirmed using HRXRD measurements. Carrier concentration in the thin films is proportional to the silane molar flow. Room temperature hall measurements showed a high carrier concentration of 6x1018-7.3x1019 cm-3 with a corresponding electron mobility of 53-27 cm2/V.s in uniformly-doped \b{eta}-(Al0.26Ga0.74)2O3 layers. Modulation doping is used to realize a total electron sheet charge of 2.3x1012 cm-2 in a \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure using a uniformly-doped \b{eta}-(Al0.26Ga0.74)2O3 barrier layer and a thin spacer layer.

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