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Effect of spin-dependent tunneling in a MoSe₂/Cr₂Ge₂Te₆ van der Waals heterostructure on exciton and trion emission
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Effect of spin-dependent tunneling in a MoSe₂/Cr₂Ge₂Te₆ van der Waals heterostructure on exciton and trion emission
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We study van der Waals heterostructures consisting of monolayer MoSe$_2$ and few-layer Cr$_2$Ge$_2$Te$_6$ fully encapsulated in hexagonal Boron Nitride using low-temperature photoluminescence and polar magneto-optic Kerr effect measurements. Photoluminescence characterization reveals a partial quenching and a change of the exciton-trion emission ratio in the heterostructure as compared to the isolated MoSe$_2$ monolayer. Under circularly polarized excitation, we find that the exciton-trion emission ratio depends on the relative orientation of excitation helicity and Cr$_2$Ge$_2$Te$_6$ magnetization, even though the photoluminescence emission itself is unpolarized. This observation hints at an ultrafast, spin-dependent interlayer charge transfer that competes with exciton and trion formation and recombination.
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