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Precision high-speed quantum logic with holes on a natural silicon foundry platform

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arxiv 2508.00446 v1 pith:E5HKSP4G submitted 2025-08-01 cond-mat.mes-hall

Precision high-speed quantum logic with holes on a natural silicon foundry platform

classification cond-mat.mes-hall
keywords quantumsiliconspinqubitscontrolgateholeholes
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins in silicon offer compact all-electrical control, whilst retaining all the salient features of a quantum dot qubit architecture. However, silicon hole spin qubits are not as advanced as electrons, due to increased susceptibility to disorder and more complex spin physics. Here we demonstrate single-qubit gate fidelities up to 99.8% and a two-qubit gate quality factor of 240, indicating a physical fidelity limit of 99.7%. These results represent the highest performance reported in natural silicon to date, made possible by fast qubit control, exchange pulsing, and industrial-grade fabrication. Notably, we achieve these results in a near-identical device as used for highly reproducible, high-fidelity electron spin qubits. With isotopic purification and device-level optimisations in the future, our hole spin qubits are poised to unlock a new operation regime for quantum CMOS architectures.

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Cited by 3 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score.

  1. Suppressing spin qubit decoherence during shuttling via confinement modulation

    cond-mat.mes-hall 2026-05 unverdicted novelty 6.0

    Confinement modulation during shuttling enables dressed-state dynamical decoupling that mitigates both global and local magnetic/electric noise in hole-spin qubits.

  2. Probing Electrostatic Disorder via g-Tensor Geometry

    cond-mat.mes-hall 2026-04 unverdicted novelty 6.0

    Hole spin qubits can sense the geometry of electrostatic disorder from two-level fluctuators via g-tensor anisotropy, using a Berry-phase protocol estimated to achieve order-unity SNR in tens of microseconds, with opt...

  3. g-tensor Optimization in Ge/SiGe Quantum Dots

    cond-mat.mes-hall 2026-04 unverdicted novelty 4.0

    A flexible optimization framework is introduced to suppress in-plane g-tensor components in SiGe-Ge-SiGe quantum wells by tuning silicon concentration, enabling gapless single-spin qubit encoding.