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Synthesis, Crystal Growth and Epitaxial Layer Deposition of FeSe0.88 Superconductor and Other Poison Materials by Use of High Gas Pressure Trap System
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Synthesis, Crystal Growth and Epitaxial Layer Deposition of FeSe0.88 Superconductor and Other Poison Materials by Use of High Gas Pressure Trap System
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The FeSe samples in the form of polycrystals, single crystals and thin films have been prepared and characterized. The synthesized material has been hot isostatically pressed under pressure of 0.45 GPa of 5N purity argon with the use of the high gas pressure trap system (HGPTS). Thin films have been fabricated by the mixed procedures with the use of DC sputtering from various types of targets and processed employing the HGPTS. The used HGPTS assures a full separation of the active volume for synthesis or crystal growth of material and the inert gas medium. The obtained FeSe0.88 samples have Tc between 8 and 12 K. The samples have been characterized by SEM, EDX, XRD, magnetic susceptibility and resistivity measurements.
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