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Versatile sputtering technology for Al2O3 gate insulators on graphene

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arxiv 1110.1535 v1 pith:IEXL5MST submitted 2011-10-07 cond-mat.mes-hall cond-mat.mtrl-sci

Versatile sputtering technology for Al2O3 gate insulators on graphene

M. Friedemann , M. Woszczyna , A. M\"uller , S. Wundrack , T. Dziomba , Th. Weimann , Th. Seyller , F. Ahlers This is my paper
classification cond-mat.mes-hall cond-mat.mtrl-sci
keywords al2o3graphenegatesputteringatomicbilayerhighinsulators
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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We report a novel fabrication method of graphene Al2O3 gate insulators based on sputtering. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is presented. Sputtered Al2O3 layers possess comparable quality to oxides obtained by atomic layer deposition (ALD) with respect to a high relative dielectric constant of about 8, as well as low-hysteresis performance and high breakdown voltage. We observe a moderate carrier mobility of about 1000 cm2/Vs in graphene and 350 cm2/Vs in its bilayer due to increased resonant scattering on atomic scale defects. Most likely this originated from the thin Al precursor layer evaporated prior to sputtering the Al2O3 gate oxide.

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