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Current path in light emitting diodes based on nanowire ensembles
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abstract
Light emitting diodes (LEDs) were fabricated using ensembles of free-standing (In,Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron beam induced current analysis, cathodoluminescence as well as biased $\mu$-photoluminescence spectroscopy, transmission electron microscopy, and electrical measurements indicate that the electroluminescence of such LEDs is governed by the differences in the individual current densities of the single-NW LEDs operated in parallel, i.e. by the inhomogeneity of the current path in the ensemble LED. In addition, the optoelectronic characterization leads to the conclusion that these NWs exhibit N-polarity and that the (In,Ga)N quantum well states in the NWs are subject to a non-vanishing quantum confined Stark effect.
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Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble
Combined single-nanowire electroluminescence and I-V measurements reveal around 12% of nanowires emit in the working ensemble LED, with per-wire current densities of 20 to 1000 A/cm2.
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