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Topologically protected quantum transport in locally exfoliated bismuth at room temperature

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arxiv 1304.0934 v1 pith:CBNXGOHI submitted 2013-04-03 cond-mat.mes-hall cond-mat.mtrl-sci

Topologically protected quantum transport in locally exfoliated bismuth at room temperature

classification cond-mat.mes-hall cond-mat.mtrl-sci
keywords conductanceobservationroomtemperaturebilayerexfoliationmechanicalphase
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We report electrical conductance measurements of Bi nanocontacts created by repeated tip-surface indentation using a scanning tunneling microscope at temperatures of 4 K and 300 K. As a function of the elongation of the nanocontact we measure robust, tens of nanometers long plateaus of conductance G0 = 2e^2/h at room temperature. This observation can be accounted for by the mechanical exfoliation of a Bi(111) bilayer, a predicted QSH insulator, in the retracing process following a tip-surface contact. The formation of the bilayer is further supported by the additional observation of conductance steps below G0 before break-up at both temperatures. Our finding provides the first experimental evidence of the possibility of mechanical exfoliation of Bi bilayers, of the existence of the QSH phase in a two-dimensional crystal, and, most importantly, of the observation of the QSH phase at room temperature.

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