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Gate-tunable infrared plasmons in electron-doped single-layer antimony

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arxiv 1808.02619 v2 pith:4DUEF4JJ submitted 2018-08-08 cond-mat.mtrl-sci cond-mat.mes-hall

Gate-tunable infrared plasmons in electron-doped single-layer antimony

classification cond-mat.mtrl-sci cond-mat.mes-hall
keywords excitationsantimoneneantimonybiascollectiveelectron-dopedrangesingle-layer
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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We report on a theoretical study of collective electronic excitations in single-layer antimony crystals (antimonene), a novel two-dimensional semiconductor with strong spin-orbit coupling. Based on a tight-binding model, we consider electron-doped antimonene and demonstrate that the combination of spin-orbit effects with external bias gives rise to peculiar plasmon excitations in the mid-infrared spectral range. These excitations are characterized by low losses and negative dispersion at frequencies effectively tunable by doping and bias voltage. The observed behavior is attributed to the spin-splitting of the conduction band, which induces interband resonances, affecting the collective excitations. Our findings open up the possibility to develop plasmonic and optoelectronic devices with high tunability, operating in a technologically relevant spectral range.

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