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Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices

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arxiv 2101.11456 v1 pith:EKSROXZO submitted 2021-01-27 cond-mat.mes-hall

Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices

Hao Zhang , Michiel W.A. de Moor , Jouri D.S. Bommer , Di Xu , Guanzhong Wang , Nick van Loo , Chun-Xiao Liu , Sasa Gazibegovic
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John A. Logan Diana Car Roy L. M. Op het Veld Petrus J. van Veldhoven Sebastian Koelling Marcel A. Verheijen Mihir Pendharkar Daniel J. Pennachio Borzoyeh Shojaei Joon Sue Lee Chris J. Palmstr{\o}m Erik P.A.M. Bakkers S. Das Sarma Leo P. Kouwenhoven
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classification cond-mat.mes-hall
keywords deviceslargestateshybridinsb-almagneticnanowirepeaks
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We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order 2e2/h. We investigate these ZBPs for large ranges of gate voltages in different devices. We discuss possible interpretations in terms of disorder-induced subgap states, Andreev bound states and Majorana zero modes.

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  1. Majorana zero modes in semiconductor-superconductor hybrid structures: Defining topology in short and disordered nanowires through Majorana splitting

    cond-mat.mes-hall 2025-06 unverdicted novelty 5.0

    Exponential protection of Majorana zero modes in finite disordered nanowires holds only for disorder much smaller than the superconducting gap.