Pith. sign in

REVIEW

The optical response of artificially twisted MoS₂ bilayers

Not yet reviewed by Pith; the record is open.

This paper has not been read by Pith yet. Machine review is queued; the pith claim, tier, and objections will appear here once it completes.

SPECIMEN: schema-true, not a live event

T0 review · schema-true

One-sentence machine reading of the paper's core claim.

pith:XXXXXXXX · record.json · timestamp

arxiv 2105.12101 v1 pith:XHTIXLP6 submitted 2021-05-25 cond-mat.mes-hall cond-mat.mtrl-sci

The optical response of artificially twisted MoS₂ bilayers

classification cond-mat.mes-hall cond-mat.mtrl-sci
keywords interlayerbilayersemissionenergytwistartificialartificiallycoupling
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
0 comments
Share X Bluesky LinkedIn Reddit HN
read the original abstract

Two-dimensional layered materials offer the possibility to create artificial vertically stacked structures possessing an additional degree of freedom - $the$ $interlayer$ $twist$. We present a comprehensive optical study of artificially stacked bilayers (BLs) MoS$_2$ encapsulated in hexagonal BN with interlayer twist angle ranging from 0 to 60 degrees using Raman scattering and photoluminescence spectroscopies. It is found that the strength of the interlayer coupling in the studied BLs can be estimated using the energy dependence of indirect emission versus the A$_\textrm{1g}$-E$_\textrm{2g}^1$ energy separation. Due to the hybridization of electronic states in the valence band, the emission line related to the interlayer exciton is apparent in both the natural (2H) and artificial (62$^\circ$) MoS$_2$ BLs, while it is absent in the structures with other twist angles. The interlayer coupling energy is estimated to be of about 50 meV. The effect of temperature on energies and intensities of the direct and indirect emission lines in MoS$_2$ bilayers is also quantified.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.