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Spin Hall magnetoresistance effect from a disordered interface

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arxiv 2202.05534 v1 pith:YTNV64D4 submitted 2022-02-11 cond-mat.mes-hall cond-mat.mtrl-sci

Spin Hall magnetoresistance effect from a disordered interface

classification cond-mat.mes-hall cond-mat.mtrl-sci
keywords magneticmnpse3disorderinterfacethincharacterizedisorderedhall
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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The Spin Hall magnetoresistance (SMR) emerged as a reference tool to investigate the magnetic properties of materials with an all-electrical set-up. Its sensitivity to the magnetization of thin films and surfaces may turn it into a valuable technique to characterize Van der Waals magnetic materials, which support long range magnetic order in atomically thin layers. However, realistic surfaces can be affected by defects and disorder, which may result in unexpected artifacts in the SMR, rather than the sole appearance of electrical noise. Here, we study the SMR response of heterostructures combining a platinum (Pt) thin film with the Van der Waals antiferromagnet MnPSe3 and observe a robust SMR-like signal, which turns out to originate from the presence of strong interfacial disorder in the system. We use transmission electron microscopy (TEM) to characterize the interface between MnPSe3 and Pt, revealing the formation of a few-nanometer-thick platinum-chalcogen amorphous layer. The analysis of the transport and TEM measurements suggests that the signal arises from a disordered magnetic system formed at the Pt/MnPSe3 interface, washing out the interaction between the spins of the Pt electrons and the MnPSe3 magnetic lattice. Our results show that damaged interfaces can yield an important contribution to SMR, questioning a widespread assumption on the role of disorder in such measurements.

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