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Exciton-Driven Renormalization of Quasiparticle Band Structure in Monolayer MoS2

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arxiv 2205.05821 v1 pith:4IAYVSLU submitted 2022-05-12 cond-mat.mtrl-sci cond-mat.str-el

Exciton-Driven Renormalization of Quasiparticle Band Structure in Monolayer MoS2

classification cond-mat.mtrl-sci cond-mat.str-el
keywords bandeffectsexcitonicopticalcorrelationsexciton-drivenmany-bodymaterials
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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Optical excitation serves as a powerful approach to control the electronic structure of layered Van der Waals materials via many-body screening effects, induced by photoexcited free carriers, or via light-driven coherence, such as optical Stark and Bloch-Siegert effects. Although theoretical work has also pointed to an exotic mechanism of renormalizing band structure via excitonic correlations in bound electron-hole pairs (excitons), experimental observation of such exciton-driven band renormalization and the full extent of their implications is still lacking, largely due to the limitations of optical probes and the impact of screening effects. Here, by using extreme-ultraviolet time-resolved angle-resolved photoemission spectroscopy together with excitonic many-body theoretical calculations, we directly unmask the band renormalization effects driven by excitonic correlations in a monolayer semiconductor. We revealed a surprising bandgap opening, increased by 40 meV, and a simultaneous enhancement of band effective mass. Our findings unmask the novel exciton-driven mechanism towards the band engineering in photoexcited semiconducting materials, opening a new playground to manipulate the transient energy states in layered quantum materials via optical controls of excitonic many-body correlations.

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  1. Influence of excitation energy on microscopic quantum pathways for ultrafast charge transfer in van der Waals heterostructures

    cond-mat.mes-hall 2025-03 unverdicted novelty 5.0

    Higher-energy excitation at the C-exciton resonance accelerates interlayer hole transfer in WS2-graphene by opening an additional efficient channel enabled by elevated carrier temperatures.