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Observation of Flat Band, Dirac Nodal Lines and Topological Surface States in Kagome Superconductor CsTi₃Bi₅

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arxiv 2212.04447 v1 pith:3DMB5JOA submitted 2022-12-08 cond-mat.supr-con cond-mat.mtrl-scicond-mat.str-el

Observation of Flat Band, Dirac Nodal Lines and Topological Surface States in Kagome Superconductor CsTi₃Bi₅

classification cond-mat.supr-con cond-mat.mtrl-scicond-mat.str-el
keywords kagomediracbandnodalaroundcstiflatlattice
verification ladder T0 review T1 audit T2 compute T3 formal T4 reserved
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A kagome lattice of 3d transition metals hosts flat bands, Dirac fermions and saddle points. It provides a versatile platform for achieving topological superconductivity, anomalous Hall effect, unconventional density wave order and quantum spin liquid when the strong correlation, spin-orbit coupling or magnetic order are involved in such a lattice. Here, using laser-based angle-resolved photoemission spectroscopy in combination with density functional theory calculations, we investigate the electronic structure of the newly discovered kagome superconductor CsTi$_3$Bi$_5$, which is isostructural to the AV$_3$Sb$_5$ (A=K, Rb or Cs) kagome superconductors and possesses a perfect two-dimensional kagome network of Titanium. We directly observed a strikingly flat band derived from the local destructive interferences of Bloch wave functions within the kagome lattices. We also identify the type-II Dirac nodal loops around the Brillouin zone center, the type-III Dirac nodal loops around the zone corners and type-III Dirac nodal lines along the k$_z$ direction. In addition, around the Brillouin zone center, Z2 nontrivial topological surface states are also observed which is formed from the band inversion due to strong spin orbital coupling. The simultaneous existence of such multi-sets of nontrivial band structures in one kagome superconductor not only provides good opportunities to study related physics in the kagome lattice but also makes CsTi$_3$Bi$_5$ an ideal system to realize noval quantum phenomena by manipulating its chemical potential with chemical doping or pressure.

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