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Unexpected Tuning of the Anomalous Hall Effect in Altermagnetic MnTe Thin Films

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arxiv 2409.04567 v1 pith:KBRZJCUV submitted 2024-09-06 cond-mat.mtrl-sci cond-mat.mes-hall

Sara Bey , Shelby S. Fields , Nicholas G. Combs , Bence G. Márkus , Dávid Beke , Jiashu Wang , Anton V. Ievlev , Maksym Zhukovskyi
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Tatyana Orlova László Forró Steven P. Bennett Xinyu Liu Badih A. Assaf
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classification cond-mat.mtrl-scicond-mat.mes-hall
keywords mntealphaaltermagneticgrownmagneticanomalouscontroleffect
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The discovery of an anomalous Hall effect (AHE) sensitive to the magnetic state of antiferromagnets can trigger a new era of spintronics, if materials that host a tunable and strong AHE are identified. Altermagnets are a new class of materials that can under certain conditions manifest a strong AHE, without having a net magnetization. But the ability to control their AHE is still lacking. In this study, we demonstrate that the AHE in altermagnetic {\alpha}-MnTe grown on GaAs(111) substrates can be "written on-demand" by cooling the material under an in-plane magnetic field. The magnetic field controls the strength and the coercivity of the AHE. Remarkably, this control is unique to {\alpha}-MnTe grown on GaAs and is absent in {\alpha}-MnTe grown on SrF2. The tunability that we reveal challenges our current understanding of the symmetry-allowed AHE in this material and opens new possibilities for the design of altermagnetic spintronic devices.

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Cited by 4 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score.

  1. Nanoscale Imaging of Strain-Controlled Altermagnetic Domains in {\alpha}-MnTe

    cond-mat.mtrl-sci 2026-07 conditional novelty 7.0 of 10

    In alpha-MnTe, compression makes magnetic domains grow by merging, and unloading leaves them fragmented in a different, metastable pattern, so the material remembers the strain history.

  2. Intrinsic single crystals of MnTe altermagnet

    cond-mat.str-el 2026-07 conditional novelty 7.0 of 10

    Stoichiometric, stress-free MnTe single crystals grown by self-flux exhibit an Anderson insulating state below ~150 K while retaining reduced anomalous Hall and XMCD altermagnet signatures.

  3. Observation of the Optical Phonons in {\alpha}-MnTe films

    cond-mat.mes-hall 2026-05 unverdicted novelty 5.0 of 10

    MBE-grown alpha-MnTe films on GaAs(111)B exhibit Raman modes at 121 and 140 cm-1 identified as all symmetry-allowed optical phonons of the hexagonal NiAs lattice via experiment and DFT calculations.

  4. Imaging Surface Magnetization in Altermagnetic MnTe Films

    cond-mat.mtrl-sci 2026-05 unverdicted novelty 5.0 of 10

    Nanoscale imaging of epitaxial MnTe films reveals interfacial-origin weak magnetization that correlates with the anomalous Hall effect and can be controlled by external fields.

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