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Quench switching of Mn2As

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arxiv 2411.01930 v1 pith:UYSMDUEZ submitted 2024-11-04 cond-mat.mtrl-sci cond-mat.soft

Quench switching of Mn2As

Kamil Olejn\'ik , Zden\v{e}k Ka\v{s}par , Jan Zub\'a\v{c} , Sjoerd Telkamp , Andrej Farka\v{s} , Dominik Kriegner , Karel V\'yborn\'y , Jakub \v{Z}elezn\'y
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Zbyn\v{e}k \v{S}ob\'a\v{n} Peng Zeng Tom\'a\v{s} Jungwirth V\'it Nov\'ak Filip Krizek
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classification cond-mat.mtrl-sci cond-mat.soft
keywords mn2asquenchswitchingmagneticrelaxationcumnasmaterialsquench-switching
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We demonstrate that epitaxial thin film antiferromagnet Mn2As exhibits the quench-switching effect, which was previously reported only in crystallographically similar antiferromagnetic CuMnAs thin films. Quench switching in Mn2As shows stronger increase in resistivity, reaching hundreds of percent at 5K, and significantly longer retention time of the metastable high-resistive state before relaxation towards the low-resistive uniform magnetic state. Qualitatively, Mn2As and CuMnAs show analogous parametric dependence of the magnitude and relaxation of the quench-switching signal. Quantitatively, relaxation dynamics in both materials show direct proportionality to the N\'eel temperature. This confirms that the quench switching has magnetic origin in both materials. The presented results suggest that the antiferromagnets crystalizing in the Cu2Sb structure are well suited for exploring and exploiting the intriguing physics of highly non-uniform magnetic states associated with the quench switching.

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